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NCE07TD60BK

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NCE07TD60BK

Part NumberNCE07TD60BK
ManufacturerNCE Power Semiconductor
CategoryPower IGBT Transistor
Description600V 70A IGBT with Anti-Parallel Diode, TO-252 Package, Through Hole Mounting

Product Overview

The NCE07TD60BK is a high-performance, high-current insulated-gate bipolar transistor (IGBT) designed for high-efficiency power switching applications. It combines low saturation voltage, fast switching speed, and high surge current capability to deliver reliable performance in demanding power control systems. The device integrates a built-in fast recovery anti-parallel diode for freewheeling protection, with excellent thermal stability and ruggedness. Housed in a standard TO-252 through-hole package, it provides superior heat dissipation and easy assembly for industrial power systems.

Key Specifications
BrandNCE Power Semiconductor
RoHS StatusRoHS Compliant
EDA / CAD Models3D Model, Symbol, Footprint Available
Warranty2-Year Warranty
Package / CaseTO-252
Mounting TypeThrough Hole
Vceo Collector-Emitter Voltage600 V
Ic Continuous Collector Current70 A
Internal DiodeFast Recovery Anti-Parallel Diode
Operating Temperature-55°C to +150°C

Typical Applications

  • Switching Power Supplies & Inverters
  • Industrial Motor Drives & Controls
  • Uninterruptible Power Supplies (UPS)
  • Solar Inverters & Renewable Energy Systems
  • Welding Machines & Power Converters
  • High-Power LED Drivers & Lighting Systems
  • Home Appliance Power Control Modules
  • Electric Vehicle (EV) Auxiliary Systems

Order & Shipping Info

Minimum Order Quantity (MOQ): 1 Piece

Shipping Time: Shipped within 1-2 business days

Delivery Time: 3-7 working days worldwide

Shipping Methods: DHL, UPS, FedEx, EMS

Technical Support

For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.

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