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NCE10TD60BK
NCE10TD60BK
| Part Number | NCE10TD60BK |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| Category | Power IGBT Transistor |
| Description | 600V 100A High Current IGBT with Fast Recovery Diode, TO-252-2 Package, Through Hole |
Product Overview
The NCE10TD60BK is a high-power, high-reliability insulated-gate bipolar transistor (IGBT) optimized for high-power switching and conversion applications. It features low saturation voltage, fast switching characteristics, high current capability, and excellent ruggedness to ensure stable operation under heavy load conditions. The device integrates a built-in fast recovery anti-parallel freewheeling diode, offering superior thermal performance and long-term durability. Housed in a standard TO-252-2 through-hole package, it provides excellent heat dissipation and is widely used in industrial and high-power electronic systems.
| Key Specifications | |
|---|---|
| Brand | NCE Power Semiconductor |
| RoHS Status | RoHS Compliant |
| EDA / CAD Models | 3D Model, Symbol, Footprint Available |
| Warranty | 2-Year Warranty |
| Package / Case | TO-252-2 |
| Mounting Type | Through Hole |
| Collector-Emitter Voltage (Vceo) | 600 V |
| Continuous Collector Current (Ic) | 100 A |
| Internal Diode | Fast Recovery Anti-Parallel Diode |
| Operating Temperature | -55°C to +150°C |
Typical Applications
- High-Power Inverters & Converters
- Industrial Motor Drives and Controls
- Uninterruptible Power Supplies (UPS)
- Solar/Wind Energy Inverters
- Welding Equipment and Power Tools
- High-Power Switching Power Supplies
- Electric Vehicle Charging Systems
- Industrial Automation and Control Systems
Order & Shipping Info
Minimum Order Quantity (MOQ): 1 Piece
Shipping Time: Shipped within 1-2 business days
Delivery Time: 3-7 working days worldwide
Shipping Methods: DHL, UPS, FedEx, EMS
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
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