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NE5550979A-T1-A

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NE5550979A-T1-A

Part NumberNE5550979A-T1-A
ManufacturerCEL (California Eastern Laboratories) / Renesas Electronics
CategoryDiscrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs
DescriptionN-Channel LDMOS RF Power Transistor, VHF/UHF 150/460/900MHz AB-Class Amplifier, Max Vds 30V, Continuous Drain Current 3A, Typical Output 39.5dBm @460MHz, 79A SMD Surface Mount Package.
Stock StatusIn Stock
OriginOriginal Factory

Product Overview

The NE5550979A-T1-A is silicon-based N-channel enhancement-mode LDMOS RF power transistor from CEL / Renesas Electronics, designed for AB-class VHF-UHF power amplifiers covering 150/460/900MHz. Under test condition VDS=7.5V, I_Dset=200mA, it reaches 39.5dBm output power, 22dB linear gain and up to 66% PAE. The compact 4-pin 79A exposed-pad SMD package fits land mobile radio, ISM transmitters and portable RF amplifier modules.

Core Advantages

Excellent VHF/UHF RF Performance

Delivers up to 22dB linear gain and 66% PAE @460MHz, balancing linearity and efficiency for communication radio equipment.

High Electrical Safety Margin

Maximum Vds 30V, continuous drain current 3A, total power dissipation 25W, improving circuit reliability.

Thermal-Optimized SMD Package

4-pin 79A package with exposed thermal pad, supports automated SMT assembly and efficient PCB heat dissipation via thermal vias.

Wide Temperature & Strong ESD Resistance

Stable operation at -55℃ ~ +150℃ junction temperature, over 8kV contact ESD tolerance, suitable for industrial & outdoor wireless devices.

Key Specifications

BrandCEL / Renesas Electronics
RoHS StatusRoHS Compliant / Lead-Free / Green
EDA/CADSymbol, Footprint & 3D Model Available
Warranty1-Year Standard Quality Warranty
Package / Case4-Pin Plastic Surface Mount 79A Package
Mounting TypeSurface Mount Device (SMD/SMT)
Surface Marking / SilkscreenW6, Marking
Transistor TechnologyN-Channel Enhancement Mode Silicon LDMOS
Frequency Coverage150MHz, 460MHz, 900MHz (VHF / UHF / Sub-1GHz ISM Band)
Typical Output Power39.5dBm (9W) @460MHz, VDS=7.5V
Typical Linear Gain22dB @460MHz (VDS=7.5V, I_Dset=200mA)
Typical Power Added EfficiencyUp to 66% @460MHz
Recommended Supply Voltage7.5 V DC (Typical Test Condition)
Max Drain-Source Voltage (Vds)30V DC Absolute Maximum Rating
Continuous Drain Current (Id)3A Maximum
Maximum Power Dissipation25W (Tc=25°C)
ESD Withstand Level>8kV Contact Discharge
Operating Junction Temperature-55°C ~ +150°C
Packaging FormatTape & Reel (-T1 Suffix, 1000 pcs / reel)

Typical Applications

  • Land Mobile Radio (LMR) handheld & mobile radio UHF/VHF power amplifiers
  • 150/460/900MHz ISM band wireless data transmission equipment
  • Automatic Meter Reading (AMR) and smart grid communication modules
  • Industrial UHF wireless remote control transmitter power stages
  • Portable RF signal booster and medium-power driver amplifier circuits

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Shipping TimeShipped within 1-2 business days
Delivery Time3-7 working days worldwide
Shipping MethodsDHL, UPS, FedEx, EMS
Payment MethodsT/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.

Frequently Asked Questions

Q1: What does suffix -T1-A mean for NE5550979A-T1-A?

A: -T1 stands for tape & reel packing, 1000 pieces per reel; suffix -A indicates lead-free, RoHS green version released by CEL.

Q2: What is the recommended operating voltage for this LDMOS transistor?

A: Standard test and recommended supply voltage is 7.5V DC. Its absolute maximum drain-source voltage reaches 30V, do not exceed rated limit in circuit design.

Q3: Can NE5550979A-T1-A work at 900MHz?

A: Yes. This transistor supports 150MHz /460MHz /900MHz VHF-UHF bands. Optimal performance data is tested at 460MHz.

Q4: Are there alternative compatible RF transistors I can consider?

A: Similar UHF LDMOS alternatives include NXP and Ampleon medium power RF devices. Compare package size, voltage, gain and output power before replacement; pin compatibility requires PCB testing.

Q5: How to handle thermal design of the 79A package?

A: The exposed thermal pad must be fully soldered to PCB ground plane. Arrange multiple thermal vias under the pad to connect bottom copper layer and reduce junction temperature.

Q6: Can I use this part in Class-C amplifier circuit?

A: The datasheet specifications are defined for AB-class application. It can work under Class-C, but gain, PAE and linearity will change. Hardware verification is required for your project.

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