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QPD3601
QPD3601
| Part Number | QPD3601 |
|---|---|
| Manufacturer | Qorvo |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF FETs & Transistors |
| Description | GaN on SiC RF Power HEMT Transistor, 3.4GHz to 3.6GHz Frequency Band, NI400-2 Ceramic Flange Package, Designed for 5G NR Base Station Doherty Amplifier Stages. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The QPD3601 is a high-power GaN-on-SiC HEMT from Qorvo, engineered for Doherty amplifier stages in 5G NR base stations. Covering 3400MHz–3600MHz, it achieves ≥206W saturated output power under 50V pulsed bias. With high small-signal gain and outstanding drain efficiency, it fits sub-6GHz massive MIMO macro & micro-cell infrastructure. The NI400-2 ceramic flange package enables secure screw mounting and stable thermal performance for pulsed and CW RF systems.
Core Advantages
Advanced GaN-on-SiC HEMT Technology
Delivers superior power density and efficiency versus conventional silicon LDMOS RF transistors.
Optimized for 5G NR n77/n78 Mid-Band
Stable performance for high-PAPR digitally modulated communication signals.
50V Typical Operating Voltage
Maximum rated Vds up to 55V, compatible with standard base station power supply designs.
Ceramic Flange Package for Reliable Cooling
NI400-2 ceramic flange construction supports screw fastening, low thermal resistance for heatsink integration.
Key Specifications
| Brand | Qorvo |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | NI400-2 Ceramic Flange Package |
| Mounting Type | Screw Fixed Flange Mount |
| Surface Marking / Silkscreen | QPD3601 Marking |
| Transistor Technology | GaN on SiC HEMT |
| Frequency Range | 3400 MHz to 3600 MHz (3.4GHz – 3.6GHz) |
| Nominal Drain Voltage (Vds) | 50 V; Maximum Rated Vds: 55 V |
| Saturated Output Power (Psat) | ≥206W @50V, 3.5GHz Pulse Condition |
| Typical Small Signal Gain | 16.3 dB; Peak Gain: 22 ~ 23 dB |
| Typical Drain Efficiency | 57.9% @ Psat |
| Quiescent Drain Current (Idq) | 360mA (Typical Class AB Bias) |
| Thermal Resistance (θjc) | 0.96 ℃/W |
| Gate Voltage (Vgs) | Typical -2.62V; Absolute Maximum: -10V |
| Maximum RF Input Power | 42 dBm |
| VSWR Tolerance | 10:1 Full Phase |
| Storage Temperature Range | -65°C ~ +150°C; Recommended Operating Temp ≤85°C |
| Packaging Format | Individual Flange Packing |
Typical Applications
- 3.4GHz – 3.6GHz 5G NR sub-6GHz base station Doherty power amplifiers (n77 / n78 bands)
- 5G massive MIMO active antenna systems (AAS) and macro-cell/micro-cell transmitters
- Main and Peak amplifier stages for Doherty amplifier architectures
- Point-to-point wireless backhaul and broadband wireless access (BWA) equipment
- High-frequency commercial pulsed RF power amplification systems
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What technology does QPD3601 adopt?
A: QPD3601 is a GaN-on-SiC HEMT manufactured by Qorvo, delivering higher efficiency and thermal performance than traditional silicon LDMOS transistors.
Q2: What is the operating drain voltage of QPD3601?
A: Typical Vds = 50V, absolute maximum drain voltage is 55V. Do not operate continuously beyond the rated value.
Q3: Can QPD3601 run under continuous wave (CW) mode?
A: Specifications are tested under pulse signals. Thermal derating design is required for CW operation to prevent overheating damage.
Q4: Are there compatible alternative RF power transistors?
A: Alternatives need matching frequency band, power and package. Other GaN devices require circuit redesign; direct pin-to-pin replacements are limited. Contact us for cross reference.
Q5: What are the differences between GaN HEMT and LDMOS for base station PA?
A: GaN features higher power density, wider bandwidth and better efficiency. LDMOS has cost advantages for low/medium power and is gradually replaced by GaN in new 5G mid-band projects.
Q6: What cooling requirements for NI400-2 packaged QPD3601?
A: Secure flange contact with heatsink using thermal grease. Keep device temperature below 85°C for stable long-term operation.
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