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RD04LUS2-T514

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RD04LUS2-T514

Part NumberRD04LUS2-T514
ManufacturerMitsubishi Electric
CategoryDiscrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs
Description4W N-Channel Enhancement Mode Silicon LDMOS RF Power MOSFET, 28V Operation, 175–527MHz VHF/UHF Band, SLP (H46SS) QFN Surface Mount Package. Not interchangeable with RD04MUS2 series even with the same supply voltage.
Stock StatusIn Stock
OriginOriginal Factory

Product Overview

The RD04LUS2-T514 is a high-efficiency N-channel enhancement-mode Silicon LDMOS RF power MOSFET from Mitsubishi Electric, designed for portable wireless devices. Under nominal 28V supply condition, it acts as driver or final power amplifier for VHF/UHF applications covering 175MHz~527MHz, delivering typical 4W output power. The device adopts SLP (H46SS) QFN surface-mount package. The suffix -T514 refers to tape & reel packaging without altering electrical performance.

Core Advantages

28V Operation Design

Designed for portable radio communication systems, stable performance under standard 28V operating conditions.

Excellent RF Performance

Typical 13dB gain and high PAE ≥60%, lowering power consumption and heat generation during continuous transmission.

Compact SLP (H46SS) QFN Package

Small footprint suitable for miniaturized PCB layout; built-in protection diode improves anti-surge capability.

Wide Operating Temperature

Supports channel temperature range of -40℃ ~ +150℃, adapting to complex outdoor and portable working conditions.

Key Specifications

BrandMitsubishi Electric
RoHS StatusRoHS Compliant / Lead-Free / Green
EDA/CAD ResourceSymbol, Footprint & 3D Model Available
Warranty1-Year Standard Quality Warranty
Package / CaseSLP (H46SS) QFN Surface Mount Package
Mounting TypeSurface Mount Device (SMD/SMT)
Surface Marking / SilkscreenRD04LUS2 Marking
Transistor TechnologyN-Channel Enhancement Mode Silicon LDMOS
Frequency Range175 MHz ~ 527 MHz (VHF / UHF Band)
Output Power (Pout)Typ. 4.0 W (VDD = 28V, f = 527MHz)
Operating Drain Voltage (VDD)28 V DC (Nominal Test Condition)
Drain-source breakdown voltage (Vdss)≥25 V
Max Continuous Drain Current (Id)3 A
Power Added Efficiency (PAE)Typ. 60% or higher at 527 MHz
Power Gain (Gp)Typ. 13 dB at 527 MHz
Internal DiodeBuilt-in protection diode
Operating Channel Temperature (Tch)-40°C to +150°C
Packaging FormatTape & Reel (-T514 Suffix, 1000 pcs / reel)

Typical Applications

  • Handheld portable VHF/UHF two-way radios
  • Battery powered wireless communication equipment
  • Short range data transmission modules
  • RF power amplifier for commercial walkie talkie
  • Portable remote control signal transmitter

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Processing TimeShipped within 1-2 business days
Delivery Cycle3-7 working days worldwide
Shipping MethodsDHL, UPS, FedEx, EMS
Payment OptionsT/T, PayPal, Credit Card, Western Union

Technical Support

For datasheet download, sample requests, stock inquiry or bulk pricing, please submit an inquiry form. We will reply within 24 hours.

Technical Support

For datasheet download, sample requests, stock inquiry or bulk pricing, please submit an inquiry form. We will reply within 24 hours.

Frequently Asked Questions

Q1: What is the difference between RD04LUS2-T514 and RD04MUS2?

A1: They are not directly interchangeable. Both adopt H46SS QFN package, but they differ in power rating, internal chip structure and recommended application circuit. Wrong replacement may cause device burnout.

Q2: Can RD04LUS2-T514 work below 175MHz or higher than 527MHz?

A2: The official frequency range is 175MHz ~ 527MHz. Operating outside this band reduces gain and efficiency, and stable output power cannot be guaranteed. Out-of-range usage is not recommended.

Q3: Is RD04LUS2-T514 pin-to-pin compatible with other brand 4W LDMOS?

A3: Most competing RF transistors have different pin definitions and impedance matching requirements. Similar package appearance does not support direct swap. Cross-brand replacement requires re-matching RF circuits and testing.

Q4: What does suffix -T514 mean for RD04LUS2-T514?

A4: -T514 is only the tape & reel packaging code, with no impact on electrical performance. RD04LUS2 (without suffix) is bulk version; chip performance remains consistent.

Q5: Do I need extra anti-surge components for this LDMOS?

A5: This transistor has a built-in protection diode. Nevertheless, ESD protection circuits on PCB are recommended for portable radios to prevent static damage during assembly and field application.

Q6: Are there alternative Mitsubishi RF transistors with similar power?

A6: You can check Mitsubishi low-power L-series LDMOS for portable devices. Pay attention to voltage differences. Send your frequency and voltage requirements if you need alternative recommendations.

Q7: What is the maximum sustainable output power of RD04LUS2-T514?

A7: Typical saturated output power reaches 4W under standard test conditions. Continuous full-power operation requires sufficient thermal design to keep channel temperature below 150°C for longer service life.

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