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RD07MUS2B-T514
RD07MUS2B-T514
| Part Number | RD07MUS2B-T514 |
|---|---|
| Manufacturer | Mitsubishi Electric |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs |
| Description | N-Channel Enhancement Mode Silicon LDMOS RF Power MOSFET with built-in gate protection diode, designed for VHF / UHF 175~870MHz power amplifier, 7.2V low voltage operation, H46SS surface-mount package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The RD07MUS2B-T514 is Mitsubishi Electric N-channel LDMOS RF power transistor with built-in gate protection diode. The -T514 suffix represents tape & reel packaging, electrically equivalent to RD07MUS2B. Designed for 7.2V battery radio equipment, it works at 175 MHz / 527 MHz / 870 MHz with stable output power, high gain and high drain efficiency. Widely applied in portable radios, mobile communication and ISM power amplifiers, packaged in H46SS SMD housing for automatic assembly.
Core Advantages
Multi-band VHF/UHF Performance
Supports 175MHz, 527MHz and 870MHz, stable power output suitable for multi-band communication equipment.
7.2V Low Battery Operation
Matches lithium battery handheld radio solutions, eliminating the need for extra boost circuits.
Built-in Gate Protection Diode
Improves ESD resistance and operational reliability under antenna mismatched load conditions.
Compact H46SS SMD Package
3-pin hybrid packaging with good thermal conductivity, ideal for compact portable wireless PCB layout.
Key Specifications
| Brand | Mitsubishi Electric |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD Resource | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | H46SS Hybrid Ceramic/Plastic SMD Package,3 pins (Drain, Source, Gate) |
| Mounting Type | Surface Mount Device (SMD/SMT) |
| Surface Marking / Silkscreen | RD07MUS2B Marking |
| Transistor Type | N-Channel Enhancement Mode Silicon LDMOS, with built-in gate protection diode |
| Frequency Range | 175 MHz / 527 MHz / 870 MHz (VHF / UHF Band) |
| Typ. Output Power (Pout) | 7.2W @175MHz / 8W @527MHz / 7W @870MHz (VDD=7.2V) |
| Operating Drain Voltage (VDD) | 7.2 V DC (Nominal Test Condition) |
| Drain-Source Breakdown Voltage (VDSS) | 25 V |
| Maximum Drain Current (ID) | 3 A |
| Gate-Source Voltage (VGSS) | -5 V ~ +10 V |
| Channel Dissipation Power (Pch) | 50 W (Tc=25℃) |
| Thermal Resistance (Rth j-c) | 2.5 ℃/W |
| Typical Quiescent Current (Idq) | Approx. 250mA (Depends on matching circuit) |
| Power Gain (Gp) | 13.8dB @175MHz / 13.0dB @527MHz / 11.5dB @870MHz |
| Drain Efficiency | 65% @175MHz / 63% @527MHz / 58% @870MHz |
| Input System Impedance | 50 Ohm, external matching network required |
| Maximum Channel Temperature (Tch) | 150 ℃ |
| Storage Temperature Range | -40℃ ~ +125 ℃ |
| Packaging Format | Tape & Reel (-T514 suffix for automated SMT mounting) |
Typical Applications
- Handheld VHF/UHF two-way radio & land mobile radio power amplifier
- Portable battery-powered RF communication transmitter module
- ISM band wireless telemetry and remote control equipment
- Low voltage RF driver stage and final power amplification circuit
- Commercial portable wireless communication equipment
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Processing Time | Ship within 1-2 business days |
| International Delivery Time | 3-7 working days |
| Shipping Options | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T Bank Transfer, PayPal, Credit Card, Western Union |
Technical Support
Please submit inquiry for datasheet download, sample application, bulk quotation and stock confirmation. We will reply within 24 hours.
Frequently Asked Questions
Q1: Can RD07MUS2B-T514 directly replace RD07MUS2B?
A: Yes. The -T514 suffix only stands for tape-and-reel packaging. The die, electrical parameters and H46SS package are identical, supporting direct replacement without circuit modification.
Q2: What is the difference between RD07MUS2B-T514 and RD04LUS2-T514?
A: RD07MUS2B-T514 reaches up to 8W for final power stages. RD04LUS2-T514 is a 4W driver amplifier. Although operating at 7.2V, they cannot cross substitute directly and need matching network adjustment.
Q3: Are there cross-brand alternatives for RD07MUS2B-T514?
A: Several RF LDMOS from other brands can be considered after re-matching. There are no pin-to-pin drop-in replacements; all substitutes require re-tuning input & output matching circuits due to different impedance characteristics.
Q4: Why does this transistor require an external 50-ohm matching network?
A: The intrinsic impedance of RF MOSFET does not match standard 50-ohm RF systems. LC matching circuits maximize power transfer, boost efficiency and reduce signal reflection across target frequency bands.
Q5: What thermal recommendations for the H46SS package?
A: Solder the source pin to a large PCB copper ground plane. Adequate copper area and thermal vias help heat dissipation to avoid channel temperature exceeding 150°C during continuous transmission.
Q6: Can RD07MUS2B-T514 run continuously at maximum power on 870MHz?
A: It provides 7W output at 870MHz. Drain efficiency drops at higher frequencies and generates extra heat. Reliable thermal layout is required for long-time continuous operation.
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