Share to:
RD09MUP2
RD09MUP2
| Part Number | RD09MUP2 |
|---|---|
| Manufacturer | Mitsubishi Electric |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs |
| Description | 8W~9W Silicon N-Channel RF MOSFET, UHF 400~520MHz, 7.2V Operation, Built-in Gate-Source Protection Diode, SMD R-XQFP-F4 Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
RD09MUP2 is Mitsubishi Electric N-channel enhancement-mode RF MOSFET for 400–520MHz portable two-way radio power amplifiers. Built-in gate-source protection diode ensures high reliability. Operating at 7.2V, it delivers 8~9W output power at 520MHz with stable gain and reliable anti-mismatch performance. The UP2 surface-mount molded package supports automated SMT assembly, commonly used in handheld radio transmitter output stages.
Core Advantages
Built-in Gate Protection Circuit
Integrated gate-source ESD protection reduces damage risk during assembly and operation for higher durability.
Low-Voltage Battery Device Design
Optimized for 7.2V supply voltage, ideal for lithium-battery powered portable radio equipment.
Stable UHF RF Performance
Maintains ≥10dB power gain across 400–520MHz, suitable for wideband UHF transceiver design.
Compact SMD Package
UP2 molded surface-mount package features low thermal resistance, fitting compact PCB layouts for handheld devices.
Key Specifications
| Brand | Mitsubishi Electric |
|---|---|
| RoHS Status | Check batch marking; partial versions are non-RoHS (contain lead solder) |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | FLATPACK (R-XQFP-F4) |
| Mounting Type | Surface Mount (SMD / SMT) |
| Surface Marking / Silkscreen | RD09MUP2 Marking |
| Transistor Type | N-Channel Enhancement-Mode RF MOSFET (Built-in Gate-Source Protection Diode) |
| Frequency Range | 400 ~ 520 MHz (UHF Band, Typical Test at 520MHz) |
| Nominal Output Power | ≥8W, Minimum 9W @ Vdd=7.2V, f=520MHz, 50Ω Load |
| Power Gain (Gp) | ≥10 dB (Typical) |
| Drain Efficiency (ηD) | ≥50% (Typical) |
| Operating Drain Voltage (VDD) | 7.2 V (Nominal), Absolute Maximum 16V |
| Gate-Source Voltage (VGS) | Absolute Maximum ±10V |
| Drain-Source Breakdown Voltage (VDSS) | 40 V |
| Maximum Drain Current (ID) | 4 A (Absolute Maximum) |
| Maximum Power Dissipation (Pch) | 1.68 W (Tc=25°C) |
| Gate Threshold Voltage (VTH) | 1.0V ~ 3.0V (Typical Range) |
| Maximum Junction Temperature (Tj) | +150°C |
| Storage Temperature Range | -40°C ~ +125°C |
Typical Applications
- Handheld UHF Land Mobile Radio transmitter power amplifier stage
- Portable two-way radio / walkie talkie RF power output circuit
- Battery powered UHF wireless telemetry transmit modules
- Amateur radio portable UHF transceiver power amplifier
- Low-power UHF RF signal booster module
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Processing Time | Ship within 1~2 working days |
| International Transit Time | 3~7 working days |
| Available Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Options | Bank T/T, PayPal, Credit Card, Western Union |
Technical Support
Contact us to request official datasheet, sample quotation, bulk price or BOM matching service. We will reply within 24 working hours.
Frequently Asked Questions
Q1: What is the standard operating voltage of RD09MUP2?
A: Nominal supply voltage is 7.2V DC, maximum allowable drain voltage 16V. It is designed for lithium battery powered portable radio equipment.
Q2: Does RD09MUP2 contain built-in protection?
A: Yes, an internal gate-source protection diode is integrated inside the chip to improve ESD tolerance and resist accidental gate overvoltage.
Q3: Can RD09MUP2 work outside 400~520MHz?
A: Main target band is UHF 400~520MHz. Performance will decline significantly when used far beyond this frequency range. Matching circuit must be redesigned for other frequency points.
Q4: What alternatives or compatible RF transistors can replace RD09MUP2?
A: Replacement must compare package, frequency and power parameters. Common alternative devices require re-matching input/output network. We suggest submitting your circuit requirement for suitable model recommendation.
Q5: Is RD09MUP2 RoHS compliant?
A: Compliance depends on production batch. Some batches adopt lead-containing solder and are non-RoHS. Please confirm batch information before large order arrangement.
Q6: What thermal layout suggestions for PCB design?
A: Lay large copper ground plane under device pad, add thermal vias to transfer heat. Excessive temperature rise will limit output power and shorten component service life.
Q7: What risk should be noticed during operation?
A: Avoid operating under severe load mismatch for a long time. High VSWR may cause thermal runaway and permanent burnout of the RF transistor.
Related Products
