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RD16HHF1-501
RD16HHF1-501
| Part Number | RD16HHF1-501 |
|---|---|
| Manufacturer | Mitsubishi Electric |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single RF MOSFETs |
| Description | 16W HF‑Band N‑Channel Enhancement‑Mode RF Power MOSFET, 12.5V Operating Voltage, TO‑220S Flange‑Mount Through‑Hole Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The RD16HHF1‑501 is N‑channel enhancement‑mode RF power MOSFET from Mitsubishi Electric, designed for HF band 1.8‑30 MHz radio transmitters. It delivers 16 W RF output power under 12.5 V supply, featuring good linearity and high VSWR ruggedness. The ‑501 suffix stands for factory packaging configuration; the die electrical performance is identical to base part RD16HHF1. Widely used for ham radio HF power amplifier, marine radio and short‑wave communication equipment.
Core Advantages
16W High RF Output Power
16 W typical output power across full HF band at 12.5 V supply, suitable for driver or final amplifier stage.
Excellent Load‑Mismatch Ruggedness
High tolerance for antenna VSWR mismatch, protects device under bad tuning or antenna disconnection conditions.
12.5V Low‑Voltage Operation
Works well with 12‑13.8 V DC power sources, perfect for portable radio and vehicle‑mounted transceiver systems.
Flange‑Mount TO‑220S Package
Metal flange for direct heatsink mounting, low thermal resistance to keep junction temperature stable under continuous high‑power operation.
Key Specifications
| Brand | Mitsubishi Electric |
|---|---|
| RoHS Status | RoHS Compliant / Lead‑Free |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | TO‑220S / TO‑220 Mounted Flange Package |
| Mounting Type | Through Hole / Screw‑Flange Heat Sink Mount |
| Surface Marking / Silkscreen | RD16HHF1 Marking |
| Transistor Type | N‑Channel Silicon Enhancement‑Mode MOSFET |
| Frequency Range | HF Band (1.8 MHz to 30 MHz) |
| Output Power (Pout) | 16 W (Typ. at 30 MHz, VDD = 12.5V) |
| Drain‑Source Breakdown Voltage (VDSS) | 50 V Max |
| Gate‑Source Voltage (VGSS) | ±20 V Max |
| Maximum Drain Current (ID) | 5 A Max |
| Maximum Power Dissipation (Pch) | 56.8 W |
| Thermal Resistance Rth(j‑c) | 2.2 °C/W |
| Drain Supply Voltage (VDD) | 12.5 V DC Nominal |
| Power Gain (Gp) | Typ. 16 dB (at 30 MHz) |
| Drain Efficiency (ηD) | Typ. 55% ~ 65% |
| Gate Threshold Voltage Vgs(th) | 1.7 ~ 4.7 V @ Vds=12V, Ids=1mA |
| Operating Junction Temperature (Tj) | -40°C to +150°C |
| Storage Temperature Range | -40°C ~ +150°C |
| Packaging Format | Individual Anti‑Static Packaging / Reel (-501 packaging code) |
Typical Applications
- Ham Radio HF SSB / CW transceivers and linear power amplifiers
- HF band marine mobile radio & coastal base‑station transmitters
- Short‑wave communication equipment and emergency radio booster
- Driver stage or final output amplifier for HF radio transmitter
- Industrial HF RF generator and related RF power circuits
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What does suffix “-501” stand for on RD16HHF1‑501?
A: “-501” is Mitsubishi factory packaging code for special tape‑and‑reel or lead forming. It has no impact on electrical performance. The chip marking only shows RD16HHF1 without this suffix.
Q2: What is the pinout of RD16HHF1‑501?
A: Pin1=Gate, Pin2=Source, Pin3=Drain. The TO‑220S metal flange connects to Drain potential. Use proper insulation when mounting onto heatsink.
Q3: Can RD16HHF1‑501 directly replace RD15HVF1?
A: Not a direct drop‑in replacement. RD16HHF1‑501 works for HF 1.8‑30 MHz, while RD15HVF1 targets VHF band. Input‑output matching circuit must be redesigned for cross‑usage.
Q4: What are common alternative RF power transistors?
A: Cross‑reference candidates include 2SC3133, 2SC1945, 2SC1969. Note differences in gain, power and impedance. Matching network adjustment is required before substitution.
Q5: Is heatsink mandatory for RD16HHF1‑501?
A: Yes. It generates heavy heat under 16W RF output. Mount it to qualified heatsink with thermal grease. Device will be damaged quickly without cooling.
Q6: What is the recommended drain supply voltage?
A: Nominal VDD is 12.5 V DC, typical working range 12‑13.8 V for ham radio systems. Never exceed absolute maximum VDSS 50 V rating.
Q7: Difference between RD16HHF1‑101 and RD16HHF1‑501?
A: Only factory packing and lead‑form difference. Their electrical characteristics are fully identical. Choose according to your assembly requirement.
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