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RD70HHF1-101
RD70HHF1-101
| Part Number | RD70HHF1-101 |
|---|---|
| Manufacturer | Mitsubishi Electric |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single RF MOSFETs |
| Description | 70W 30MHz N‑Channel Enhancement‑Mode Silicon MOSFET Transistor, 12.5V Operating Voltage, Ceramic Flange Mounted Power Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The RD70HHF1‑101 is Mitsubishi Electric high‑power N‑channel enhancement‑mode MOSFET for HF band up to 30 MHz. It delivers typical 70 W RF output under 12.5 V supply, featuring high gain, good efficiency and strong VSWR ruggedness. The ceramic metal‑sealed flange package ensures reliable heat dissipation. Suffix ‑101 stands for RoHS‑compliant tray version. Commonly used for ham radio HF amplifiers, marine transmitters and industrial RF power equipment.
Core Advantages
High 70W RF Power & Gain
70 W typical output across 1.8‑30 MHz HF band with 13 dB power gain at 12.5 V, requiring low driving power.
12.5V / 13.8V System Compatibility
Optimized for radio‑grade 12.5‑13.8 V DC power supplies with high drain efficiency for continuous transmission.
Excellent Load‑Mismatch Ruggedness
Survives high VSWR up to 20:1, protecting circuits during antenna tuning or unexpected load faults.
Low‑Thermal‑Resistance Ceramic Package
Metal‑ceramic flange housing provides efficient heat transfer to heatsink for stable high‑power long‑time operation.
Key Specifications
| Brand | Mitsubishi Electric |
|---|---|
| RoHS Status | RoHS Compliant / Lead‑Free (-101 suffix indicates RoHS version) |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | Ceramic Metal-Sealed |
| Mounting Type | Screw‑Flange Mount / Through Hole |
| Housing Material | Ceramic, Metal‑Sealed |
| Terminal Count | 2 (Source connected to housing) |
| Surface Marking / Silkscreen | RD70HHF1 Marking |
| Transistor Type | N‑Channel Silicon Enhancement‑Mode MOSFET |
| Frequency Range | HF Band (1.8 MHz to 30 MHz) |
| Output Power | 70.0 W (Typ. at 30 MHz, VDD = 12.5V) |
| Drain‑Source Breakdown Voltage VDSS | 50 V Min |
| Gate‑Source Voltage VGSS | ±20 V Max |
| Continuous Drain Current Id | 20 A Max |
| Total Power Dissipation Pd | 150 W (Tc=25°C) |
| Drain Supply Voltage VDD | 12.5 V DC Nominal |
| Power Gain Gp | Typ. 13 dB (at 30 MHz) |
| Drain Efficiency | Typ. 60% or higher |
| Operating Junction Temperature Tj | -40°C to +175°C |
| Thermal Resistance Rth(j‑c) | 1.4 °C/W Typical |
| Packaging Format | Individual Anti‑Static Packaging / Tray (-101 packaging code) |
Typical Applications
- High‑power Amateur Radio (Ham Radio) HF SSB/CW transceivers and linear power amplifiers
- Commercial HF marine mobile/base station transmitters and coastal communications
- Tactical military HF voice and data communication systems
- Final output power amplifier stages for HF radio transmitters
- Industrial RF heating, plasma generators, and high‑power wireless telemetry
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What does suffix “-101” mean for RD70HHF1‑101?
A: “-101” is Mitsubishi RoHS‑compliant tray‑pack suffix. Electrical specs are identical to base RD70HHF1. The chip marking only shows RD70HHF1 without‑101.
Q2: What is the power rating of RD70HHF1‑101?
A: Typical 70 W RF output @30 MHz, 12.5 V supply. Maximum power dissipation is 150 W at Tc=25°C.
Q3: What is the difference between RD70HHF1 and RD70HVF1?
A: RD70HHF1 works for HF 1.8‑30 MHz. RD70HVF1 targets VHF/UHF 175‑520 MHz. They are not pin‑compatible and cannot swap directly.
Q4: How is RD70HHF1‑101 different from RD16HHF1?
A: Both are HF MOSFETs. RD16HHF1 is 16 W for driver stage. RD70HHF1‑101 is 70 W for high‑power final stage with higher current demand.
Q5: Is a heatsink required for RD70HHF1‑101?
A: Yes. Must mount to qualified heatsink with thermal grease. Junction temperature can reach +175°C; poor cooling will destroy the device under full power.
Q6: Can I replace other‑brand 70 W HF MOSFET directly?
A: No direct drop‑in replacement. Pinout, impedance and S‑parameters differ. RF matching circuits need re‑design.
Q7: Why is source connected to the metal housing?
A: Its source pin is internally bonded to flange housing. Ensure good ground connection during PCB layout for stable RF performance.
Q8: Where can I get datasheet and bulk quotation?
A: Submit your request via inquiry form. We send original datasheet, stock status and volume price within 24 hours.
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