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RD70HVF1C-501
RD70HVF1C‑501
| Part Number | RD70HVF1C‑501 |
|---|---|
| Manufacturer | Mitsubishi Electric |
| Category | Discrete Semiconductor Products / RF & Microwave Components > RF Power MOSFET Transistors |
| Description | High‑Power VHF/UHF N‑Channel Enhancement‑Mode Silicon MOSFET Transistor, 70W Output Power @175MHz, 50W @530MHz Band, 12.5V Supply, R‑CDFM‑F2 (Ceramic Flange Mount, 3‑Pin) Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The RD70HVF1C‑501 is Mitsubishi Electric’s N‑channel enhancement‑mode RF power MOSFET for VHF/UHF radio amplifiers. Running on 12.5V supply, it delivers 70W @175 MHz and 50W @530 MHz. Ceramic flange package ensures good thermal performance and VSWR ruggedness for land mobile radios and transmitters.
Core Advantages
High Output Power & Efficiency
70W VHF / 50W UHF output, typical drain efficiency above 60%, lowering heat generation for RF amplifier circuits.
Band‑Dependent Gain Performance
＞10.6 dB gain @175 MHz VHF, ＞7.0 dB gain @520 MHz UHF, reduces input‑drive requirements.
Rugged Thermal & VSWR Tolerance
Flange‑mount package with low thermal resistance, withstands VSWR mismatch for reliable radio‑system operation.
12.5V Vehicle‑Supply Optimized
Optimized for 12.5V DC input, ideal for vehicle‑mounted mobile communication equipment.
Key Specifications
| Brand | Mitsubishi Electric |
|---|---|
| RoHS Status | RoHS Compliant / Lead‑Free |
| EDA / CAD | PCB Footprint & 3D Model Available upon Request |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | R‑CDFM‑F2 (Ceramic Flange Mount, 3‑Pin) |
| Mounting Type | Chassis Mount / Flange Mount (Bolt Down) |
| Thermal Resistance Rth(j‑c) | 1.8 °C/W |
| Surface Marking / Silkscreen | RD70HVF1C |
| Transistor Type | N‑Channel Enhancement‑Mode Silicon MOSFET |
| Operating Frequency Range | 136 MHz to 175 MHz (VHF) / 400 MHz to 530 MHz (UHF) |
| Output Power (Pout) | 70 W (f = 175 MHz, VDD =12.5V) / 50 W (f = 530 MHz, VDD =12.5V) |
| Power Gain (Gp) | ＞10.6 dB @175 MHz；＞7.0 dB @520 MHz |
| Drain Efficiency (ηD) | ＞55% (Typical 60%) |
| Drain Supply Voltage (VDD) | 12.5 V Nominal; Absolute Maximum Rating 30V |
| Continuous Drain Current (Id) | 20 A Max |
| Power Dissipation(Pch) | 150W (Tcase=25℃) |
| Threshold Voltage Vth | 1.3V‑2.3V (Typical 1.8V) |
| Operating Temperature Range | ‑40℃ ~ +80℃ |
| Max Junction Temperature(Tch) | 175°C |
Typical Applications
- VHF/UHF High‑Power Mobile Transceivers and Two‑Way Radios
- Commercial Land Mobile Radio (LMR) and Professional Mobile Radio (PMR) Base Stations
- Public Safety, Emergency Services, and Tactical Communication Transmitters
- Amateur Radio High‑Power VHF/UHF Amplifiers (144 MHz / 430 MHz)
- Industrial RF Power Generators and Marine Wireless Communication Systems
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What frequency ranges does the RD70HVF1C‑501 support?
A: It supports high‑power amplification for VHF 136‑175 MHz and UHF 400‑530 MHz communication bands.
Q2: What is the nominal supply voltage for this RF MOSFET?
A: Nominal operating voltage is 12.5V DC, absolute maximum 30V DC, designed for 12V vehicle radio systems.
Q3: What does suffix ‑501 mean? Is there pin‑compatible model?
A: Suffix‑501 stands for RoHS‑compliant version. RD70HVF1C (without suffix) is pin‑to‑pin compatible with identical electrical performance but non‑RoHS.
Q4: What is the package type of RD70HVF1C‑501?
A: Official package is R‑CDFM‑F2 ceramic flange 3‑pin package. It is often called TO‑220‑style flange in RF industry, NOT standard plastic TO‑220 package.
Q5: How to mount RD70HVF1C‑501 for good heat dissipation?
A: Fasten ceramic flange firmly to flat heatsink with thermal grease. Keep junction temperature below 175°C for long‑term reliability.
Q6: Are there cross‑reference or alternative RF MOSFET parts?
A: RD60HVF1 is lower‑power alternative for similar frequency range. It is not drop‑in replacement; input & output matching circuits need re‑tuning.
Q7: What is the gain difference between VHF and UHF band?
A: Gain＞10.6 dB @175 MHz VHF; gain drops to＞7.0 dB @520 MHz UHF. Higher input drive power is required for UHF applications.
Q8: Where to get datasheet, reference circuit and bulk quotation?
A: Submit your request via Quick Inquiry form for official datasheet, application notes and volume pricing.
Q9: What is difference between RD70HVF1C and RD70HVF1C‑501?
A: They share identical die, package and electrical specs. Suffix‑501 only indicates RoHS‑compliant production batch, pin‑to‑pin direct replacement without circuit modification.
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