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SI7617DN-T1-GE3

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SI7617DN-T1-GE3

Part NumberSI7617DN-T1-GE3
ManufacturerVishay Siliconix
CategoryMOSFETs; P-Channel Power MOSFET
DescriptionP-Channel Power MOSFET,30V,35A,12.3 mΩ, Ultra Low Rds(on), PowerPAK1212-8 Package

Product Overview

The SI7617DN-T1-GE3 is a high-performance P-channel power MOSFET from Vishay Siliconix, built with advanced trench technology for ultra-low on-resistance and high efficiency. It offers excellent thermal performance, high continuous current capability, fast switching speed, and robust reliability for demanding power management applications. The compact PowerPAK1212-8 surface-mount package ensures high power density and easy integration into space-constrained designs.

Key Specifications
BrandVishay Siliconix
RoHS StatusRoHS Compliant
EDA / CAD Models3D Model, Symbol, Footprint Available
Warranty2-Year Warranty
Package / CasePowerPAK1212-8
Mounting TypeSurface Mount (SMD)
Surface Marking / Silkscreen7617 Marking
Channel TypeP-Channel
Drain-Source Voltage (Vds)30 V
Continuous Drain Current (Id)35 A
On-State Resistance (Rds(on))12.3 mΩ (Max)
Operating Temperature-55°C to +175°C

Typical Applications

  • High-Efficiency DC-DC Converters
  • Power Management and Load Switching
  • Battery Protection and Management Systems
  • Server, Notebook and Desktop Power Supplies
  • Motor Drivers and Industrial Controls
  • High-Current Power Switching Modules
  • Portable Electronics and Power Tools
  • Automotive and Industrial Power Systems

Order & Shipping Info

Minimum Order Quantity (MOQ): 1 Piece

Shipping Time: Shipped within 1-2 business days

Delivery Time: 3-7 working days worldwide

Shipping Methods: DHL, UPS, FedEx, EMS

Payment Methods: T/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.

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