Share to:
VRF2933
VRF2933
| Part Number | VRF2933 |
|---|---|
| Manufacturer | Microchip Technology / Microsemi / Powerex |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs |
| Description | 300W High-Power HF/VHF N-Channel Enhancement Mode RF Power MOSFET, 50V Operating Voltage, M177 Flange Mount Package, upgraded successor model of SD2933. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The VRF2933 is gold-metallized N-channel enhancement-mode RF power DMOS transistor from Microchip Technology (formerly Microsemi / Powerex). As the upgraded successor of SD2933, it targets high-reliability HF/VHF transmitters, industrial RF generators and medical RF excitation systems. Operating at 50V nominal voltage, it delivers 300W continuous RF power from DC to 150MHz. Featuring nitrided gate oxide technology, high gain and strong anti-mismatch performance, it adopts gold-plated M177 hermetic ceramic flange package for continuous high-power operation.
Core Advantages
Gold Metallization & Nitrided Gate Oxide Process
Gold contact structure and nitrided gate oxide offer outstanding long-term stability, anti-aging property and stable gate voltage tolerance under continuous high-power operation.
300W CW Continuous Output Power
Single tube supports 300W continuous RF output power, reducing power device count, simplifying combiner circuits and lowering the total cost of amplifier systems.
Excellent Anti-Mismatch Ruggedness
It can withstand up to 70:1 VSWR under specified test conditions and guarantees 3:1 full-phase mismatch resistance, preventing damage caused by antenna open or short circuit faults.
M177 Hermetic Flange Package with Low Thermal Resistance
M177 hermetic ceramic flange packaging with copper base, maximum junction-to-case thermal resistance of 0.27°C/W, enabling efficient heat dissipation with external heatsinks.
Key Specifications
| Brand | Microchip Technology / Microsemi |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | M177 Hermetic Ceramic Flange Package |
| Mounting Type | Chassis Mount / Flange Bolt-Down Mounting |
| Surface Marking / Silkscreen | VRF2933 Marking |
| Transistor Technology | N-Channel Enhancement Mode DMOS Silicon MOSFET |
| Frequency Range | HF / VHF Spectrum (DC to 150 MHz), main test point at 30MHz |
| Output Power | 300 W (Typ. at VDD = 50V, f = 30MHz) |
| Operating Drain Voltage | 50 V DC (Nominal) |
| Drain-Source Breakdown Voltage | Minimum 170 V |
| Continuous Drain Current | 42 A (Tc=25°C) |
| Total Power Dissipation | 648 W (Tc=25°C) |
| Gate-Source Voltage Range | ±40 V |
| Threshold Voltage | 2.9 ~ 4.4 V, Typical 3.6 V |
| Power Gain | Min. 20 dB, Typ. 22~25 dB at 30 MHz |
| Drain Efficiency | Typ. ≥50%, over 60% under optimized matching circuit |
| VSWR Ruggedness | Up to 70:1 VSWR (specified test); guaranteed 3:1 full phase mismatch |
| Capacitance Parameters @50V,1MHz | Ciss=740pF, Coss=400pF, Crss=32pF |
| Thermal Resistance (Rth(j-c)) | Max 0.27°C/W |
| Maximum Junction Temperature | 200°C |
| Storage Temperature Range | -65°C ~ +150°C |
| Packaging Format | Tray / Anti-Static Protective Box |
Typical Applications
- Commercial FM broadcast transmitters (88MHz – 108MHz high-power amplifier stages)
- Industrial, Scientific, and Medical (ISM) RF generators, induction heating, plasma processing equipment
- High-power HF and VHF military, marine, and commercial radio communication equipment
- NMR & Medical Magnetic Resonance Imaging (MRI) RF power amplifiers
- Amateur Radio (Ham Radio) high-power HF / 6-meter linear power amplifiers
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What is the direct replacement for VRF2933?
A: VRF2933 is the upgraded successor of SD2933. It can directly substitute SD2933 in most HF/VHF power amplifiers without large circuit adjustments.
Q2: What is its operating voltage and max continuous RF output power?
A: Nominal drain voltage is 50V DC; typical continuous-wave RF output power reaches 300W at 30MHz.
Q3: What are the differences between VRF2933 and SD2933?
A: VRF2933 adopts improved nitrided gate oxide & gold metallization for better mismatch resistance and longer service life. SD2933 is the older generation variant.
Q4: How much VSWR can VRF2933 withstand?
A: It supports up to 70:1 VSWR under specified test conditions and runs stably with 3:1 full-phase mismatch in common projects.
Q5: Can VRF2933 work at 144MHz?
A: Its upper frequency limit is 150MHz. Limited output power is available at 144MHz, with obvious gain drop; careful matching design is required.
Q6: Are there other alternative RF power MOSFETs?
A: Alternatives include SD2941 and BLF series transistors. They differ in gain and impedance, requiring circuit redesign and cannot be pin-to-pin replacements.
Q7: What cooling requirements apply to M177 packaged VRF2933?
A: Mount tightly onto flat copper heatsinks with thermal grease. Avoid continuous operation near 200℃ max junction temperature; keep steady temperature below 160℃ to extend lifespan.
Q8: Any gate driving precautions for this RF MOSFET?
A: Gate-source voltage cannot exceed ±40V peak value. A gate clamping circuit is recommended to prevent ESD damage and overvoltage breakdown during debugging.
Related Products
