BLF6G10LS-135R,112
| Part Number | BLF6G10LS-135R,112 |
|---|---|
| Manufacturer | Ampleon / NXP Semiconductors |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs |
| Description | 135W LDMOS RF Power Transistor, 700MHz to 1000MHz Frequency Range, 28V Drain Operation, Earless Flanged SOT502B Air-Cavity Package, Obsolete Product. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The BLF6G10LS-135R,112 is a 135W Gen6 LDMOS RF power transistor from Ampleon (formerly NXP Semiconductors), designed for base station and industrial RF applications within the 700MHz~1000MHz frequency band. It delivers outstanding linear performance for W-CDMA, LTE and GSM systems, offering 21dB gain and 26.5W average output power under dual-carrier W-CDMA at 28V. Equipped with integrated input matching to simplify PCB layout, this device adopts earless flanged SOT502B air-cavity packaging and withstands 10:1 VSWR mismatch. Note: This model is officially obsolete by Ampleon.
Core Advantages
High Efficiency & 135W Peak Saturation Output Power
Supplies up to 135W P1dB peak saturated output power with stable performance for sub-GHz cellular power amplifiers and reduces thermal burden for transmitting devices.
Wide Sub-GHz Band Coverage (700MHz to 1000MHz)
Tuned for 700~1000MHz wireless infrastructure, suitable for 800/900MHz cellular networks and 868MHz,915MHz ISM radio devices.
Built-In Input Matching Simplifies PCB Development
The integrated input impedance matching circuit cuts peripheral components, lowers RF layout difficulty and shortens product development cycles.
High Ruggedness & Reliable Thermal Performance
Earless flanged ceramic air-cavity package with 0.56K/W low thermal resistance, maximum junction temperature up to 225°C, tolerates 10:1 full-phase load mismatch without permanent damage.
Key Specifications
| Brand | Ampleon / NXP Semiconductors |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | SOT502B |
| Mounting Type | Chassis Mount / Flange Mount |
| Surface Marking / Silkscreen | BLF6G10LS-135R Marking |
| Transistor Type | LDMOS (Lateral Diffused Metal Oxide Semiconductor) |
| Frequency Range | 700 MHz to 1000 MHz |
| Output Power (P1dB Peak) | 135 W (Typical at 28V) |
| Average Output Power (W-CDMA) | 26.5 W (2-carrier W-CDMA, Vds=28V) |
| Power Gain | 19.5 dB (960MHz Continuous Wave); 21.0 dB (Dual-carrier W-CDMA) |
| Drain Efficiency | >50% (CW); 28.0% under dual-carrier W-CDMA test |
| Operating Voltage (VDS) | 28 V (Nominal) |
| Drain-source Breakdown Voltage V(BR)DSS | 65 V |
| Max Continuous Drain Current ID | 32 A |
| Quiescent Drain Current IDQ | 950 mA (Typical Bias Point) |
| ACPR | -39 dBc (3GPP W-CDMA Test Standard) |
| Thermal Resistance Rth(j-case) | 0.56 K/W |
| Ruggedness (VSWR) | 10:1 through all phases |
| Drain-Source On Resistance (Rds(on)) | 100 mΩ @ Vgs=3.75V |
| Threshold Voltage (Vgs(th)) | 2.4 V |
| Operating Junction Temperature | Up to +225°C |
| Storage Temperature Range | -65°C ~ +150°C |
| Packaging Format | Tray / Tube (,112 packing suffix) |
| Lifecycle Status | Obsolete / End of Life |
Typical Applications
- GSM, EDGE, W-CDMA, and LTE sub-GHz cellular base station power amplifiers
- Macro-cell and micro-cell telecom transmitter final and driver stages
- Industrial, Scientific, and Medical (ISM) RF power generators in the 868MHz and 915MHz bands
- Radio repeaters, trunked radio systems, and public safety communication infrastructure
- Broadcasting transmitters and RF test equipment
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, bulk pricing and alternative model recommendation, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What does the “,112” suffix mean in BLF6G10LS-135R,112?
A: The “,112” suffix is official packaging code for tube/tray format, it will not change electrical parameters of the transistor.
Q2: What frequency band is BLF6G10LS-135R,112 optimized for?
A: Optimized for 700MHz to 1000MHz frequency band, suitable for cellular sub-GHz network and 868/915MHz ISM equipment.
Q3: Does BLF6G10LS-135R,112 include built-in impedance matching?
A: Internal input matching is integrated. The output side requires external matching circuit design according to application requirements.
Q4: How to install SOT502B package for sufficient heat dissipation?
A: Securely fix the flange to flat, smooth heatsink with screws. Thermal interface material (thermal grease/pad) is required between flange and heatsink to reduce thermal resistance.
Q5: Is BLF6G10LS-135R,112 still in production?
A: This model is officially obsolete (end of life) by Ampleon. Contact us to get recommended alternative LDMOS RF transistors.
Q6: What are the pin definitions of SOT502B package?
A: Pin1=Drain, Pin2=Gate, Pin3=Source; the metal flange is connected to Source terminal.
Q7: What is the main difference between this model and similar sub-GHz RF power transistors?
A: It features integrated input matching, stable linearity for W-CDMA systems and excellent load mismatch tolerance. Many competing devices need full external input and output matching circuits.
Q8: Are there direct pin-to-pin compatible replacements for BLF6G10LS-135R,112?
A: There is no fully pin-to-pin equivalent model on the market. We can recommend similar Ampleon LDMOS devices matched for 700–1000MHz after receiving your working voltage and application specifications.
Q9: Can I directly replace it with LDMOS transistors from other manufacturers?
A: Direct plug-and-play replacement is not advised. Different brands differ in input impedance, thermal resistance and linear performance. Matching network readjustment is necessary if switching competitors’ components.
