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HTN7G38S007P
HTN7G38S007P
| Part Number | HTN7G38S007P |
|---|---|
| Manufacturer | WATECH (Huatai Electronics) |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs |
| Description | 7W LDMOS RF Power Transistor, 700MHz-3800MHz Wide Frequency Band, 28V Operation, PDFN 5×5mm Flangeless Surface Mount Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The HTN7G38S007P is a wideband LDMOS RF power transistor manufactured by WATECH. Operating from 700MHz to 3800MHz, it delivers 7W typical saturated output power at 28V supply. Suitable for 2G/3G/4G/Sub-6G 5G communication infrastructure, signal repeaters and wireless driver amplifiers. It adopts PDFN 5×5mm flangeless SMD package with exposed thermal pad. No internal RF matching; external input and output matching circuits are required.
Core Advantages
700MHz~3800MHz Ultra-Wideband Coverage
Supports 2G,3G,4G and Sub-6GHz 5G, compatible with multiple wireless communication projects.
Stable 7W Output @ 28V Supply
Reliable saturated power, ideal for pre-driver and driver amplifier stages.
Compact PDFN 5×5mm Flangeless Package
Small SMD footprint with exposed pad, convenient automatic SMT assembly and excellent heat dissipation.
High Load Mismatch Ruggedness
Built-in enhanced ESD protection, stable operation under 10:1 unbalanced load mismatch.
Key Specifications
| Brand | WATECH |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | PDFN (5×5mm Flangeless) |
| Mounting Type | Surface Mount Device (SMD/SMT) |
| Surface Marking / Silkscreen | HTN7G38S007P Marking |
| Transistor Technology | LDMOS (Lateral Diffused Metal Oxide Semiconductor) |
| Frequency Band | 700 MHz ~ 3800 MHz |
| Saturated Output Power (Psat) | 7 W (Typical at 28V) |
| Operating Drain Voltage (VDS) | 28 V DC (Operating Range: 0~28V) |
| Drain-Source Breakdown Voltage (Vdss) | Min. 65V |
| Gate-Source Voltage (Vgs) | -5 V ~ +10 V |
| Quiescent Drain Current (Idq) | 70mA ~ 100mA (Adjustable) |
| Thermal Resistance (RθJC) | 2.9 °C/W |
| Operating Case Temperature (Tc) | -40°C ~ +150°C |
| Storage Temperature | -55°C ~ +150°C |
| ESD Protection | Enhanced built-in ESD protection circuit |
| Operation Mode | Continuous Wave (CW) / Pulsed |
| Packaging Format | Tape & Reel |
Typical Applications
- 2G/3G/4G/5G Sub-6GHz cellular base station driver amplifier
- Mobile communication signal repeater & signal enhancement equipment
- Wireless intercom system & RF transmit module power stage
- Broadband wireless access and private network radio equipment
- Wideband general-purpose RF power amplification projects
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours. S-parameters and thermal characteristic data can be provided upon formal request.
Frequently Asked Questions
Q1: What frequency band does HTN7G38S007P support?
A: It is wideband LDMOS transistor covering 700MHz to 3800MHz, compatible with 2G,3G,4G and sub-6GHz 5G communication systems.
Q2: What is the standard operating supply voltage of HTN7G38S007P?
A: Nominal drain operating voltage is 28V DC, allowable working voltage range 0~28V.
Q3: Does HTN7G38S007P come with built-in RF input and output matching?
A: No internal RF matching. External input and output matching circuits need to be designed according to target frequency.
Q4: What are available compatible alternative models for HTN7G38S007P?
A: Alternatives: HTN7G38S010P (10W wideband, same package), HTN7G27S007P (7W, narrower band 700-2700MHz). Foreign equivalent: AFT27S010NT1.
Q5: Can HTN7G38S007P directly replace HTN7G27S007P?
A: Package pinout is consistent, but frequency coverage differs. HTN7G38S007P supports up to 3800MHz, extra matching tuning is required for frequencies above 2700MHz.
Q6: How to handle thermal design for PDFN 5×5mm package?
A: Solder exposed thermal pad fully on PCB copper plane, add multiple thermal vias to reduce junction temperature.
Q7: What is the difference between flangeless PDFN package and flanged TO package?
A: PDFN flangeless is small SMD type for low-medium power; flanged TO packages are mostly for high-power devices requiring independent radiator locking. They cannot be pin-to-pin replaced.
Q8: What quiescent current range should I set during debugging?
A: Recommended Idq range:70mA ~100mA, adjustable based on linearity and power consumption requirements.
Q9: Is this device suitable for continuous long-time CW operation?
A: Yes. Ensure proper PCB thermal design to keep case temperature below 150°C under continuous wave working status.
Q10: Can this transistor withstand antenna open / short circuit mismatch?
A: Supports up to 10:1 VSWR unbalanced load mismatch. Still recommend adding external protection circuit for harsh industrial environments.
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