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FLL357ME
FLL357ME
| Part Number | FLL357ME |
|---|---|
| Manufacturer | Sumitomo Electric / Eudyna / Fujitsu |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF FETs & GaAs Power MESFETs |
| Description | L-Band GaAs Power MESFET, Medium-High Power RF Transistor, Hermetic Metal-Ceramic CASE ME Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
FLL357ME is an N-channel depletion mode GaAs MESFET manufactured by Sumitomo Electric (Eudyna/Fujitsu) for 2.3GHz L-band RF power amplification. With stable gain, high PAE and hermetic packaging, it fits base station transmitters, AB-class linear RF amplifiers and microwave communication devices. It delivers reliable RF performance under continuous-wave operation with outstanding thermal stability at VDS=10V.
Core Advantages
Stable L-Band RF Performance
Tuned for 2.3GHz, offering 11.5dB typical gain and 35.5dBm P1dB output power for linear RF amplification.
High Power Added Efficiency
Typical PAE up to 46%, lowering heat generation and power consumption for transmitter systems.
Hermetic Metal-Ceramic Package
CASE ME flange mounting design features low thermal resistance, excellent environmental adaptability for outdoor long-term equipment.
Advanced GaAs Depletion Mode Technology
Delivers better high-frequency performance compared with silicon-based RF transistors.
Key Specifications
| Brand | Sumitomo Electric / Eudyna / Fujitsu |
|---|---|
| RoHS Status | RoHS Compliant (Lead-Free) |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | CASE ME, Hermetic Metal-Ceramic Package with Mounting Flange |
| Mounting Type | Flange Mount, Bolt-Down Installation |
| Pin Count | 2 Pin (Source connected to flange) |
| Surface Marking / Silkscreen | L357 Marking |
| Transistor Technology | N-Channel Depletion Mode GaAs MESFET (GaAs JFET) |
| Frequency Range | L-Band Microwave, Center Frequency 2.3 GHz |
| Nominal Operating Voltage (VDS) | 10 V |
| P1dB Output Power | 35.5 dBm (3.55 W) @2.3GHz |
| Power Gain | 11.5 dB Typical @ 2.3GHz |
| Typical PAE | 46% |
| Drain-Source Breakdown Voltage (VBR(DSS)) | ≥15 V |
| Zero-Gate Drain Current (IDSS) | 1200 ~ 1800 mA (VDS=5V, VGS=0V) |
| Gate Pinch-off Voltage (Vp) | -3.5 V ~ -1.0 V |
| Thermal Resistance (RθJC) | 7.5 °C/W |
| Operating Channel Temperature | -65 °C ~ +175 °C |
| Packaging Format | Tray / ESD Protective Carrier |
Typical Applications
- L-Band Base Station RF Power Amplifier Modules
- AB Class Linear Microwave Communication Amplifiers
- Point-to-point wireless transmission equipment
- Telemetry and ground station RF transmitter systems
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What transistor technology does FLL357ME adopt?
A1: It uses N-channel depletion mode GaAs MESFET (GaAs JFET) process, optimized for L-band high frequency RF amplification.
Q2: What is the operating frequency of FLL357ME?
A2: Optimized for L-band with typical center frequency 2.3GHz, not suitable for C-band circuits.
Q3: Is FLL357ME original Sumitomo / Eudyna component?
A3: All products are authentic original FLL357ME, CASE ME 2-pin flange package consistent with official datasheet.
Q4: Are there pin-to-pin compatible alternatives for FLL357ME?
A4: No fully direct pin-compatible replacement. Similar L-band GaAs power transistors from FLL series can be evaluated; circuit re-matching is required.
Q5: What is the difference between GaAs MESFET and silicon LDMOS for L-band amplifier?
A5: GaAs MESFET provides superior linearity at medium power range. Silicon LDMOS achieves higher output power while linearity performance is weaker without pre-distortion.
Q6: How to design thermal solution for FLL357ME?
A6: Fasten the metal flange to copper heatsink with thermal grease. Keep channel temperature below 175℃ to guarantee long service life.
Q7: Can FLL357ME run under continuous wave (CW) operation?
A7: Yes, it supports CW operation. Reliable heat dissipation must be arranged to prevent thermal runaway.
Q8: Why can’t other brand RF transistors directly replace FLL357ME?
A8: Different devices have different internal impedance, VGS range and gain parameters. Direct replacement leads to impedance mismatch, power reduction or device damage.
Q9: What recommended bias condition for FLL357ME?
A9: Standard drain voltage VDS is 10V. Gate pinch-off voltage ranges from -3.5V ~ -1.0V, negative gate bias circuit is necessary.
Q10: What comparable competitor devices can be used for reference?
A10: Alternative candidates include 2~4W L-band GaAs power FETs from Mitsubishi and Triquint. Verify power, gain and package before circuit redesign.
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