Share to:
MRF6S20010NR1
MRF6S20010NR1
| Part Number | MRF6S20010NR1 |
|---|---|
| Manufacturer | NXP Semiconductors / Freescale |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs / Power Transistors |
| Short Description | 10W LDMOS RF Power Transistor, 28V N-Channel Enhancement Mode Lateral MOSFET, 1600MHz to 2200MHz, TO-270-2 / PRFP-1 Plastic SMD Package |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The MRF6S20010NR1 is a 10W N-channel enhancement-mode LDMOS RF power transistor from NXP (formerly Freescale). Optimized for multi-carrier cellular power amplifiers, it operates at 1600–2200 MHz. This single-ended device features built-in 50Ω impedance matching, suitable for analog and digital modulation communication systems. This part is officially obsolete and not recommended for new designs.
Core Advantages
High Reliable RF Performance
Provides stable 10W PEP output with typical 15.5 dB gain @2170 MHz, tolerates maximum 5:1 VSWR load mismatch under rated working conditions.
Integrated Matching Circuit
Onboard input matching network for 50Ω systems, lowering BOM cost and shortening PCB development cycle.
Excellent Electrical Characteristics
28V nominal operating voltage with high drain-source breakdown voltage, compatible with Class A / Class AB linear amplifier topologies for communications infrastructure.
Convenient SMT Package
TO-270-2 gull-wing surface-mount package, supporting automated mass SMT assembly.
Key Specifications
| Brand | NXP Semiconductors / Freescale |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | TO-270-2 / PRFP-1 Plastic Surface Mount Package |
| Mounting Type | Surface Mount Device (SMD/SMT) |
| Surface Marking / Silkscreen | M6210N Marking |
| Transistor Technology | N-Channel Enhancement Mode LDMOS |
| Frequency Range | 1600 MHz to 2200 MHz |
| RF Output Power (Pout) | Typ. 10 W PEP (VDD = 28V, f = 2170MHz) |
| Operating Drain Voltage (VDD) | 28 V DC (Nominal), Vds Breakdown Voltage: 68V |
| Power Gain (Gp) | Typ. 15.5 dB @28V, 130mA, 2170 MHz |
| Drain Efficiency | Typ. 36% (Two-tone test) ; 15% (W-CDMA @1W) |
| Quiescent Drain Current (IDQ) | 130 mA (Typical Bias Condition) |
| VSWR Withstand Capability | Up to 5:1 VSWR @ 28V, 10W CW |
| Thermal Resistance (RθJC) | 2.5°C/W (1W CW), 5.9°C/W (10W PEP Two-tone) |
| Operating Junction Temperature (Tj) | -65°C to +150°C |
| Storage Temperature | -65°C to +175°C |
| ESD Rating | HBM Class 1A, MM Class A, CDM Class IV |
| Packaging Format | Tape & Reel (R1 suffix: 500 units per 13-inch reel) |
Typical Applications
- GSM / GSM EDGE Power Amplifier Modules
- Single-carrier N-CDMA / Dual-carrier W-CDMA Base Station Driver Amplifiers
- Class A / Class AB General RF Linear Power Amplifiers
- Analog & Digital Modulation Communication Radio Equipment
- RF Test Equipment & Industrial Wireless Transmitters
Technical Support
Please send us your BOM list or specific technical requirements if you need datasheets, sample supply, alternative model recommendation, or bulk quotation. We will reply within 24 hours.
Frequently Asked Questions
Q1: What is the difference between MRF6S20010NR1 and MRF6S20010N?
A: MRF6S20010N is tray bulk version; MRF6S20010NR1 is lead-free tape & reel package (500pcs/13-inch reel). Electrical specifications are identical. The GNR1 version features modified gull-wing leads and cannot be directly replaced without PCB adjustment.
Q2: Is MRF6S20010NR1 still in production?
A: NXP has officially marked this model obsolete. Available stock is residual inventory. We recommend updated successor series for new hardware projects.
Q3: Can other brands’ 10W 2GHz LDMOS serve as cross-brand alternatives?
A: Devices with similar power ratings exist, yet most are not drop-in replacements. Different manufacturers adopt distinct internal matching networks. Circuit simulation and PCB modification are required before substitution.
Q4: What does the 5:1 VSWR withstand rating mean?
A: The transistor supports continuous operation under 5:1 load mismatch at rated power. External protection circuits are still recommended to prevent long-term mismatch and extend service life.
Q5: What quiescent current is recommended for normal operation?
A: Typical IDQ = 130mA for Class AB linear operation. Adjust bias current according to linearity demands for W-CDMA and multi-carrier communication equipment.
Q6: Which frequency band is this transistor optimized for?
A: Operating frequency range: 1600–2200MHz, optimized for PCS / UMTS 2100MHz cellular bands. Performance will degrade outside this frequency range.
Q7: Are there special soldering requirements for TO-270-2 package?
A: It is a gull-wing SMT package. Follow standard lead-free reflow profile. Ensure sufficient thermal contact between pad and heatsink for heat dissipation.
Q8: What risks are there when purchasing this obsolete component?
A: Stock is limited and no future replenishment. It suits equipment maintenance and old project repair, but is not recommended for newly developed mass-production products.
Related Products
