Share to:
HTU7G06S002P
HTU7G06S002P
| Part Number | HTU7G06S002P |
|---|---|
| Manufacturer | WATECH |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs / Power Transistors |
| Description | 2W LDMOS RF Power Transistor, Operating Band 1.8-1000MHz, Optimized for VHF/UHF Walkie-talkie, Broadband Driver & Final Stage Amplifier. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
HTU7G06S002P from WATECH is a non-matched discrete LDMOS RF power transistor. It operates 1.8 MHz–1000 MHz, optimized for the 400–470 MHz band, delivering typical 2.0W saturated output power under CW signal. Suitable for driver and final-stage amplifiers in VHF/UHF walkie-talkies and broadband RF amplification equipment. Built-in enhanced ESD protection; the exposed bottom pad of the package serves as the Source terminal, requiring standardized PCB layout for heat dissipation.
Core Advantages
High Power Added Efficiency
Up to ≥60% PAE at 400–470MHz CW signal, reducing power consumption for portable radio devices.
Wide Frequency Coverage
1.8MHz–1000MHz bandwidth, fully compatible with VHF/UHF two-way radio systems.
4V Low Voltage Operation
Nominal +4V supply voltage, max 12V rating, ideal for battery-powered portable communication hardware.
Integrated ESD Protection & Robust Design
Meets HBM Class 1B & CDM Class III ESD standards, anti-degradation design ensures long-term stable operation.
Key Specifications
| Brand | WATECH |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | SOT-89-3L |
| Mounting Type | Surface Mount Device (SMD/SMT) |
| Surface Marking / Silkscreen | H0602C Marking |
| Technology | LDMOS (Laterally-Diffused Metal-Oxide-Semiconductor) |
| Frequency Range | 1.8 MHz ~ 1000 MHz (Optimized:400–470 MHz) |
| Saturated Output Power(Pout) | Typ. 2.0 W (400–470MHz) |
| Nominal Drain Voltage(Vdd) | +4.0 V DC, Absolute Max: 12V |
| Quiescent Current(Idq) | 300 mA |
| Power Added Efficiency(PAE) | ≥60% (400–470MHz, CW) |
| Input Power | Approx. 0.1 W (20 dBm) |
| Drain-source Breakdown Voltage(Vdss) | Min. 12 V |
| Gate Threshold Voltage(Vgs(th)) | 1.0 ~ 1.5 V |
| Operating Junction Temperature (Tj) | -40°C ~ +150°C |
| Storage Temperature(Tstg) | -55°C ~ +150°C |
| Thermal Resistance (Rth(j-c)) | 10 ℃/W |
| ESD Rating | HBM Class 1B, CDM Class III |
Typical Applications
- VHF/UHF Walkie-talkie RF power amplifier (Driver & Final Stage)
- Broadband RF signal power amplification module
- Portable wireless communication transmitting equipment
- Sub-GHz ISM band radio transmission circuit
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T, PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What should I notice about the SOT-89-3L package pad?
A: The exposed metal pad is the Source terminal. Connect it to PCB ground plane via thermal vias for heat dissipation.
Q2: Can HTU7G06S002P work above 12V supply voltage?
A: Not allowed. The absolute maximum drain voltage is 12V; the recommended nominal operating voltage is +4V.
Q3: Are there compatible alternative devices for HTU7G06S002P?
A: Similar 2W Sub-GHz LDMOS can serve as reference replacements. Verify frequency, voltage and package before mass use. Pin-to-pin substitution requires circuit matching tests.
Q4: What is the difference between WATECH HTU series and international brand RF transistors?
A: The HTU series is optimized for low-voltage 4V portable radios. Compared with overseas LDMOS, it offers cost advantages for walkie-talkies with matched frequency band and stable CW performance.
Q5: Can this transistor work outside the 400–470MHz frequency band?
A: It supports 1.8MHz–1000MHz broadband operation. However, power and efficiency will drop outside 400–470MHz, and specifications cannot be guaranteed.
Q6: What test conditions apply to official parameters?
A: All typical parameters are measured at 25°C ambient temperature, Vdd=4V DC, CW signal, 400–470MHz.
Q7: Does WATECH have other HTU series models with higher output power?
A: WATECH supplies multiple HTU RF transistors with different power ratings. Contact us to get the comparison list for 1W / 2W / 3W / 5W versions.
Related Products
