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BLF7G27LS-90P,112
BLF7G27LS-90P,112
| Part Number | BLF7G27LS-90P,112 |
|---|---|
| Manufacturer | Ampleon (Formerly NXP Semiconductors) |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs / Power Transistors |
| Description | 90W LDMOS RF Power Transistor, 28V N-Channel Enhancement Mode Lateral MOSFET, Dual-device common-source configuration, 2500MHz to 2700MHz Base Station Power Amplifier, SOT1121B (CDFM4) Ceramic Metal Flange Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
BLF7G27LS-90P,112 is a 90W Gen7 LDMOS RF power transistor by Ampleon (formerly NXP). It operates at 2500–2700 MHz for LTE Band7/38/41 and WiMAX base station equipment. This dual common-source component integrates input/output matching, supports Class-AB operation and delivers great linearity for W-CDMA signals. Packaged in SOT1121B (CDFM4) ceramic metal flange housing with excellent ruggedness for macro base stations and remote radio heads.
Core Advantages
Advanced 7th Generation LDMOS Technology
Dual common-source structure, high power density and stable continuous-wave performance.
High Linear Gain & DPD Compatibility
18.5dB typical gain at 2600MHz, low memory effect and fully compatible with DPD linearization.
Integrated Internal Matching
Built-in matching network eases 50-ohm PCB layout and reduces external tuning components.
High Temperature Resistance & Ruggedness
Maximum junction temperature up to 225°C. Low thermal resistance and strong resistance to load mismatch.
Key Specifications
| Brand | Ampleon (Formerly NXP Semiconductors) |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | SOT1121B (CDFM4) Ceramic Metal Flange Package |
| Mounting Type | Direct Heat-Sink Flange Mounting |
| Pin Count | 4 Pins |
| Surface Marking / Silkscreen | BLF7G27LS-90P Marking |
| Transistor Technology | 7th Generation N-Channel LDMOS, Dual-device Common-Source |
| Frequency Range | 2500 MHz to 2700 MHz (LTE Band 7 / Band 41 / WiMAX) |
| RF Output Power (Pout) | Typ. 90 W (VDS = 28V, f = 2600MHz); Average ~16–25W under W-CDMA single carrier |
| Operating Drain Voltage (VDS) | 28 V DC (Nominal) |
| Drain-source Breakdown Voltage (BVDSS) | ≥65 V |
| Quiescent Drain Current (IDq) | 720 mA (Typical Test Condition) |
| Max Continuous Drain Current | 18 A |
| Power Gain (Gp) | Typ. 18.5 dB at 2600 MHz |
| Operating Class | Class-AB |
| Drain Efficiency (ηd) | Typ. 28% to 32% (Linear) / Higher in Doherty Architecture |
| Operating Junction Temperature (Tj) | -65°C to +225°C |
| Packaging Format | Rail/Tube Packaging (,112 suffix = tube packing) |
Typical Applications
- Macrocell wireless base station power amplifiers (2.6GHz, LTE Band 7, Band 38, Band 41, WiMAX)
- Remote Radio Head (RRH) and Remote Radio Unit (RRU) final output stages
- Active Antenna Systems (AAS) and multi-carrier cellular transmitters (2.5 – 2.7 GHz)
- Commercial wireless repeaters, bi-directional amplifiers, and microcell boosters
- IS-95, W-CDMA communication standard RF power amplifier stages
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What does the suffix ,112 stand for in BLF7G27LS-90P,112?
A: ,112 means Rail/Tube packaging. Different suffixes only change packing type, electrical performance remains identical.
Q2: What frequency range does BLF7G27LS-90P support?
A: Optimized for 2500–2700 MHz, applied to LTE Band7, Band41 and WiMAX base station RF amplifiers.
Q3: Are there compatible alternative RF transistors?
A: Ampleon BLF7G27LS-60P (60W lower-power version). Cross-brand alternatives need circuit re-tuning and parameter verification.
Q4: What is the difference between Gen6 and Gen7 Ampleon LDMOS?
A: This Gen7 device achieves higher gain, better linearity and improved thermal performance under 2.6GHz LTE signals compared with Gen6 models.
Q5: Can it continuously run at full 90W rated power?
A: 90W is CW rating. Typical average power for W-CDMA LTE signals is 16–25W. Sufficient heat dissipation is required to limit junction temperature below 225°C.
Q6: Can it directly replace other SOT1121B packaged RF transistors?
A: Same package does not support direct replacement. Internal matching and frequency characteristics differ, circuit re-design is necessary.
Q7: How can I get datasheet and bulk quotation?
A: Send an inquiry with your project specifications. We will provide complete datasheet, stock status and competitive bulk price within 24 hours.
Q8: Does this transistor require external input and output matching components?
A: It comes with built-in matching networks, greatly simplifying 50-ohm PCB design while some fine tuning can still boost overall performance.
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