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RD15HVF1-101

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RD15HVF1-101

Part NumberRD15HVF1-101
ManufacturerMitsubishi Electric
CategoryDiscrete Semiconductor Products > Transistors > FETs, MOSFETs > Single RF MOSFETs
Description15W VHF‑UHF N‑Channel RF Power MOSFET, 12.5V Operation, TO‑220S Flange Mount Package.
Stock StatusIn Stock
OriginOriginal Factory

Product Overview

The RD15HVF1‑101 is N‑Channel enhancement‑mode RF power MOSFET from Mitsubishi Electric. Optimized for 12.5V mobile radio systems, it delivers 15W output power across VHF up to 520 MHz. It features excellent gain, high drain efficiency and robust 20.1:1 VSWR load‑mismatch tolerance. Packaged in TO‑220S flange‑mount through‑hole housing, suffix‑101 denotes RoHS‑compliant lead‑forming / tray packaging variant for communication transmitters.

Core Advantages

Broad Frequency Coverage

Supports 175 MHz VHF band and extends to 520 MHz UHF range, 15W typical output power under 12.5V supply condition.

Good Gain & Efficiency Performance

Typical 14 dB gain and 60% drain efficiency at 175 MHz; 7 dB gain and 55% efficiency at 520 MHz for radio transmitter application.

High Load Mismatch Ruggedness

Capable of enduring full‑phase 20.1:1 VSWR without device damage under rated operating condition, improves field reliability for mobile radio equipment.

TO‑220S Flange Package

Flange‑mount through‑hole package with low thermal resistance Rth(j‑c)=2.6 ℃/W, easy heatsink installation for high‑power continuous‑wave operation.

Key Specifications

BrandMitsubishi Electric
RoHS StatusRoHS Compliant (‑101 suffix version)
EDA/CADSymbol, Footprint and 3D Model Available
Warranty1‑Year Standard Product Warranty
Package / CaseTO‑220S / TO‑220 Flange Mount Package‑3
Mounting TypeThrough‑Hole, Screw‑Flange Heatsink Mount
Surface Marking / SilkscreenRD15HVF1 Marking
Transistor TypeN‑Channel Silicon Enhancement‑Mode RF MOSFET
Frequency Range1 MHz ~ 520 MHz
Output Power Pout15.0 W Typical (VDD=12.5V)
Drain‑Source Breakdown Voltage VDSS30 V Max
Maximum Gate‑Source Voltage VGSS±20 V
Drain Supply Voltage VDD12.5 V DC Nominal
Continuous Drain Current Id4 A
Total Power Dissipation Pch48 W
Power Gain Gp14 dB Typ @175 MHz ; 7 dB Typ @520 MHz
Drain Efficiency ηD60% Typ @175 MHz ; 55% Typ @520 MHz
Threshold Voltage Vth1.5 ~ 2.5 V (Typical 2.0 V)
Thermal Resistance Rth(j‑c)2.6 ℃/W Max
Operating Junction Temperature Tj-40°C to +150°C
Storage Temperature Range Tstg-40°C to +150°C
Packaging FormatTray / Individual Anti‑Static Packaging (‑101 lead‑form code)

Typical Applications

  • 12.5V VHF‑UHF Land Mobile Radio (LMR) Transceivers
  • Marine VHF Radio Communication Equipment
  • Amateur Radio / Ham Radio 2‑meter band amplifiers
  • Driver stage & Final output stage for RF transmitters
  • Industrial wireless telemetry radio transmit units

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Shipping TimeShipped within 1‑2 business days
Delivery Time3‑7 working days worldwide
Shipping MethodsDHL, UPS, FedEx, EMS
Payment MethodsT/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

For datasheet, sample requests, stock check or bulk pricing, please submit quick inquiry form. We will reply within 24 hours.

Frequently Asked Questions

Q1: What does suffix “-101” mean for RD15HVF1‑101?

A: “-101” is Mitsubishi mechanical suffix for lead forming and tray packaging. It supports RoHS compliance and will not change any electrical performance of the chip.

Q2: What is the difference between RD15HVF1 and RD15HVF1‑101?

A: The die and RF performance are identical. RD15HVF1‑101 uses formed leads with RoHS tray packing. They are pin‑to‑pin compatible for replacement.

Q3: What are main operating conditions of RD15HVF1‑101?

A: Nominal drain supply is 12.5V DC. It works from 1MHz to 520MHz, delivering typical 15W RF output power under test conditions.

Q4: Can other RF MOSFET directly substitute RD15HVF1‑101?

A: There is no drop‑in replacement. RD16HHF1 can be evaluated for higher‑power projects, but it has different pinout, gain and bias requirements. Matching circuits need re‑tuning after replacement.

Q5: Do I have to use heatsink for RD15HVF1‑101?

A: Heatsink is mandatory. Fasten the TO‑220S flange to qualified heatsink with thermal grease. Insufficient cooling will cause permanent device damage under full‑power operation.

Q6: What is the pin assignment of RD15HVF1‑101?

A: Pin1‑Gate, Pin2‑Source, Pin3‑Drain, Tab‑Source. Double‑check pin definition before soldering to avoid burn‑out caused by wrong connection.

Q7: Is RD15HVF1‑101 fit for CW and FM transmitters?

A: Yes, designed for FM land mobile radio, also supports CW mode. Please follow maximum junction temperature and VSWR limits in your system design.

Q8: How can I get datasheet or bulk price?

A: Submit the inquiry form on this page. Our sales‑engineering team will send datasheet, stock confirmation and competitive bulk quotation within 24 hours.

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