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RD70HUF2-T5105
RD70HUF2-T5105
| Part Number | RD70HUF2-T5105 |
|---|---|
| Manufacturer | Mitsubishi Electric |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single RF MOSFETs |
| Description | 70W 530MHz Dual‑Pad N‑Channel Enhancement‑Mode Silicon MOSFET Power Transistor, 12.5V Operating Voltage, Built‑In Gate Protection Diode, High‑Power Surface Mount Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
RD70HUF2‑T5105 is Mitsubishi Electric N‑channel RF MOSFET for 175‑530 MHz UHF applications. With built‑in gate protection diode, it outputs 70W at 12.5V DC. Dual‑pad HPM SMT package provides good thermal performance, suitable for land mobile radio, public safety and UHF transmitter final amplifier stages.
Core Advantages
70W High UHF Output Power
70W output power, typical gain＞10 dB @530 MHz, fits high‑power final amplifier designs.
Dual‑Pad Thermal‑Optimized Layout
Even thermal and electrical stress distribution, improves RF density and device stability.
High Efficiency & 12.5V Supply
Typical drain efficiency ≥64% @530 MHz, works with standard 12.5V vehicle power supply.
Built‑In Gate Protection Diode
Enhances ESD and over‑voltage resistance, reduces failure risk during assembly and operation.
High VSWR Ruggedness
Withstands severe load mismatch, protects power stage against antenna faults and mis‑tuning.
Key Specifications
| Brand | Mitsubishi Electric |
|---|---|
| RoHS Status | RoHS Compliant / Lead‑Free |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | HPM High Power Surface Mount Package |
| Mounting Type | Surface Mount Device (SMD/SMT) |
| Surface Marking / Silkscreen | RD70HUF2 Marking |
| Transistor Type | N‑Channel Silicon Enhancement‑Mode MOSFET, Built‑In Gate Protection Diode |
| Frequency Range | 175 MHz to 530 MHz (UHF Band) |
| Output Power (Pout) | 70.0 W (Typ. at 530 MHz, VDD = 12.5V) |
| Drain‑Source Breakdown Voltage (VDSS) | 40 V Max |
| Drain Supply Voltage (VDD) | 12.5 V DC Nominal |
| Power Gain (Gp) | Typ. >10 dB (at 530 MHz) |
| Drain Efficiency (ηD) | Typ. ≥64% (at 530 MHz) |
| Input Power (Pin) | Approx 5.5 W (at 530 MHz) |
| Operating Junction Temperature (Tj) | -40°C to +150°C |
| Packaging Format | Tape & Reel (‑T5105 suffix denotes SMT tape direction and reel spec) |
Typical Applications
- 12.5V Land Mobile Radio (LMR) systems and public safety UHF transceivers
- Commercial UHF mobile base stations and repeater power amplifiers
- Tactical military UHF communications and emergency response boosters
- Final output power amplifier stages in high‑power UHF wireless transmitters
- Industrial RF heating modules and high‑power wireless telemetry transmitters
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What does suffix “-T5105” mean for RD70HUF2‑T5105?
A: “-T5105” stands for tape‑and‑reel packaging & pin orientation for SMT high‑speed assembly. Component silkscreen only marks RD70HUF2 without suffix.
Q2: What is the operating frequency of RD70HUF2‑T5105?
A: It targets UHF band 175 MHz‑530 MHz, working under 12.5 V DC nominal supply.
Q3: Difference between RD70HUF2‑T5105 and RD70HHF1?
A: Both are 70W RF transistors. RD70HHF1 is HF band through‑hole flange package; RD70HUF2‑T5105 is UHF SMT dual‑pad device. They are not pin‑to‑pin compatible, cannot swap directly.
Q4: Can RD70HUF2‑T5105 substitute other brand UHF RF MOSFET directly?
A: No direct drop‑in replacement. Even power & frequency are similar, impedance, S‑params and footprint differ. Matching circuit needs re‑tuning for cross‑brand substitution.
Q5: What is the advantage of built‑in gate protection diode?
A: It improves ESD resistance, lowers gate damage risk during PCB assembly and antenna mismatch events.
Q6: How to get datasheet, S‑parameters or bulk quotation?
A: Submit request via Quick Inquiry form. Our RF support team will send related documents and quote within 24 hours.
Q7: What thermal design suggestion for RD70HUF2‑T5105?
A: This high‑power SMT device requires adequate copper heat spreading on PCB. Keep junction temperature below 150°C for long‑term reliable operation.
Q8: Is RD70HUF2‑T5105 still in production?
A: RD70HUF2 is mature UHF power transistor. Contact us to confirm real‑time stock and production status before your design‑in.
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