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BLF8G10LS-270,112
BLF8G10LS-270,112
| Part Number | BLF8G10LS-270,112 |
|---|---|
| Manufacturer | Ampleon / NXP Semiconductors |
| Category | Discrete Semiconductor Products > Transistors – FETs, MOSFETs – RF |
| Description | Power LDMOS Transistor, 270W CW, 820 MHz to 960 MHz, 28V, SOT502B Package, Tray Packaging. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The BLF8G10LS‑270,112 is a high‑power Gen8 LDMOS RF transistor from Ampleon (formerly NXP). Optimized for 820‑960 MHz base‑station applications, it delivers 270 W CW output power at 28 V supply. It features high gain, good drain efficiency and excellent VSWR ruggedness. Packaged in earless ceramic SOT502B flange package with tray shipping (suffix 112), it is ideal for high‑reliability telecom power amplifiers.
Core Advantages
High Power & Efficiency
Gen8 LDMOS technology delivers 270 W CW output with high drain efficiency, cutting power consumption and cooling requirements.
Integrated Matching
Built‑in input/output matching simplifies PCB design and reduces external components.
Superior Ruggedness
Withstands high‑VSWR load mismatch across all phases for stable operation in harsh conditions.
Low‑Thermal‑Resistance Package
SOT502B earless ceramic flange package enables efficient heat dissipation for continuous high‑power operation.
Key Specifications
| Brand | Ampleon / NXP Semiconductors |
|---|---|
| RoHS Status | RoHS Compliant / Lead‑Free |
| EDA / CAD | PCB Footprint & 3D Model Available upon Request |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | SOT502B (Earless Ceramic Flange) |
| Mounting Type | Chassis Mount / Flange Mount |
| Surface Marking / Silkscreen | BLF8G10LS‑270 Marking |
| Transistor Type | LDMOS N‑Channel RF Power Transistor |
| Operating Frequency Range | 820 MHz to 960 MHz |
| Output Power (Pout) | 270 W CW / Peak Power capabilities under modulated signals |
| Drain‑Source Voltage (Vds) | 28 V DC Typ. (Max 65V Vdss) |
| Power Gain (Gps) | 18.5 dB Typ. @ 920‑960 MHz |
| Drain Efficiency | > 54% Typ. |
| Quiescent Drain Current (IDQ) | 2000 mA (Typ. @ Vds=28V) |
| Junction Temperature (TJ) | 225 °C (Max) |
| Storage Temperature | -65 °C ~ +150 °C |
| Thermal Resistance Rth(j‑c) | 0.264 K/W |
| Reference Case Temperature | 80 °C |
| Packaging Type | Tray Packaging (112 Suffix) |
Typical Applications
- GSM, EDGE, W‑CDMA, and LTE Wireless Base Station Power Amplifiers (900 MHz Band)
- Macrocell Base Station Multi‑Carrier Power Amplifiers (MCPA)
- Cellular Repeater Systems and High‑Power Transmission Equipment
- Industrial, Scientific, and Medical (ISM) RF Power Amplifiers
- Avionics, PMR, and Tactical Radio Communication Transmitters
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What is the difference between suffix ‘,112’ and ‘,118’?
A: ‘,112’ = Tray for manual assembly; ‘,118’ = Tape & Reel for automatic SMT. Same die, electrical specs and SOT502B package, only packaging form differs.
Q2: What are compatible and alternative replacement models?
A: Direct pin‑to‑pin compatible: BLF8G10LS‑270,118 (only suffix changed). Lower‑power alternative: BLF8G10LS‑160 (160W CW, same SOT502B footprint). Higher‑power option: BLF8G10LS‑300 (same package, higher power rating). Always verify power, voltage and frequency before substitution.
Q3: Can BLF8G10LS‑270 directly replace BLF8G10LS‑160?
A: They share identical SOT502B pin‑out. However BLF8G10LS‑270 has higher output power and higher IDQ bias current. You must adjust bias circuit and cooling system; it is not a drop‑in replacement.
Q4: What package does BLF8G10LS‑270,112 use?
A: Earless ceramic SOT502B flange‑mount package. Thermal interface material is required for heatsink mounting to achieve low thermal resistance.
Q5: What is the frequency range of BLF8G10LS‑270,112?
A: Optimized for 820 MHz‑960 MHz for cellular base‑station power amplifiers.
Q6: What are Tj max and Rth(j‑c) specifications?
A: Max junction temperature Tj = 225 °C; thermal resistance Rth(j‑c) = 0.264 K/W. Keep case temperature ≤80 °C for reliable continuous‑wave operation.
Q7: What is typical IDQ quiescent drain current?
A: Typical IDQ = 2000 mA at Vds=28 V for class‑AB bias. Improper bias will reduce efficiency or damage the device.
Q8: Where can I get datasheet, S‑parameters and bulk quotation?
A: Submit your request via our inquiry form; we will provide datasheet, S‑parameter models and volume pricing within 24 hours.
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