Share to:
AFV121KHR5
AFV121KHR5
| Part Number | AFV121KHR5 |
|---|---|
| Manufacturer | NXP Semiconductors |
| Category | Discrete Semiconductor Products / Transistors > RF FETs, MOSFETs |
| Description | 1000W Pulsed LDMOS Power Transistor, 960 MHz to 1215 MHz Full Frequency Range, 50V Supply, NI‑1230H‑4S High‑Power Ceramic Flange Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
AFV121KHR5 is NXP high‑power N‑channel LDMOS RF transistor for pulsed avionics systems. It delivers 1000W peak pulsed power across 960‑1215 MHz (typical DME/SSR working band 1030‑1090 MHz) under 50V supply. Housed in NI‑1230H‑4S ceramic flange package with internal input matching, it features high gain, good drain efficiency and 10:1 VSWR load‑mismatch ruggedness for radar and air‑traffic‑control transmitters.
Core Advantages
Kilowatt‑Level Pulsed RF Output
1000W peak pulsed power, optimized for 1030‑1090 MHz avionics pulse transmitters.
50V High‑Voltage LDMOS Process
High power density, low operating current, simplifies power‑supply and thermal design.
Built‑in Input Impedance Match
Integrated matching network reduces external components for wide‑band performance.
Superior Load‑Mismatch Ruggedness
Withstands up to 10:1 VSWR full‑power mismatch, ensures high system reliability.
Key Specifications
| Brand | NXP Semiconductors |
|---|---|
| RoHS Status | RoHS Compliant / Lead‑Free |
| EDA / CAD | PCB Footprint & 3D Model Available upon Request |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | NI‑1230H‑4S / Air‑Cavity Ceramic Flange Package |
| Mounting Type | Chassis Mount / Bolt‑Down Flange Mount |
| Surface Marking / Silkscreen | AFV121KH / NXP Logo |
| Transistor Technology | LDMOS (N‑Channel Enhancement‑Mode) |
| Operating Frequency Range | 960 MHz to 1215 MHz |
| Typical Application Frequency | 1030 MHz ~ 1090 MHz (DME / SSR / ATC) |
| Peak Pulsed Output Power (Pout) | 1000 W (Pulsed: 128 µs pulse width, 10% duty cycle) |
| Power Gain (Gps) | > 18 dB (Typical at 1090 MHz) |
| Drain Efficiency (ηD) | > 55% (Typical) |
| Drain‑Source Voltage (VDSS) | 100 V (Max Rating), 50V (Nominal Operating) |
| Gate‑Source Voltage (VGS) | -6 V to +10 V |
| VSWR Ruggedness | Up to 10:1 Full‑Power Load Mismatch Tolerance |
| Operating Junction Temperature (Tj) | Up to +225°C |
| Storage Temperature Range | ‑65°C ~ +225°C |
| Packing Style | R5: Tape‑and‑Reel, 50 Pieces Per Reel |
Typical Applications
- Avionics Identification Friend or Foe (IFF) Transponders and Interrogators
- Secondary Surveillance Radar (SSR) and Mode S Air Traffic Control Systems
- Distance Measuring Equipment (DME) and Tactical Air Navigation (TACAN) Transmitters
- ADS‑B / UAT Airborne Traffic Control Transmitter Modules
- L‑Band Pulsed Power Amplifiers for Radar and Electronic Warfare Systems
- Commercial and Military High‑Power RF Signal Generators
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What is the full operating frequency range of AFV121KHR5?
A: Full operating frequency is 960‑1215 MHz. Typical avionics working band for DME and secondary radar is 1030‑1090 MHz.
Q2: What is the peak output power of this LDMOS transistor?
A: Under 128µs pulse, 10% duty‑cycle and 50V supply, it delivers 1000W peak pulsed RF output power.
Q3: What is the difference between AFV121KHR5 and AFV121KHSR5?
A: Electrical specs are identical. AFV121KHR5 is NI‑1230H‑4S with mounting lugs; AFV121KHSR5 is NI‑1230S‑4S earless flat flange. R5 means tape‑and‑reel packing. Electrically compatible, but mechanical mounting is not interchangeable.
Q4: Can AFV121KHR5 directly replace AFV121KGS?
A: RF performance is similar, but NI‑1230G‑4L package differs. Pin‑to‑pin replacement is unavailable. PCB and heatsink modification are required.
Q5: What installation tips for NI‑1230 ceramic flange package?
A: Bolt the flange firmly to high‑conductivity flat heatsink. Apply thermal grease to lower thermal resistance for high‑power pulsed operation.
Q6: What is maximum junction temperature of AFV121KHR5?
A: Max operating junction temperature Tj is +225°C. Adequate heatsink design is required, do not exceed this rating.
Q7: How to get datasheet, reference circuit or bulk price?
A: Submit Quick Inquiry for official datasheets, reference designs, stock status and volume quotation. We reply within 24 hours.
Related Products
