Share to:

BLF6G10LS-135R,112

Add to quote

BLF6G10LS-135R,112

Part NumberBLF6G10LS-135R,112
ManufacturerAmpleon / NXP Semiconductors
CategoryDiscrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs
Description135W LDMOS RF Power Transistor, 700MHz to 1000MHz Frequency Range, 28V Drain Operation, Earless Flanged SOT502B Air-Cavity Package, Obsolete Product.
Stock StatusIn Stock
OriginOriginal Factory

Product Overview

The BLF6G10LS-135R,112 is a 135W Gen6 LDMOS RF power transistor from Ampleon (formerly NXP Semiconductors), designed for base station and industrial RF applications within the 700MHz~1000MHz frequency band. It delivers outstanding linear performance for W-CDMA, LTE and GSM systems, offering 21dB gain and 26.5W average output power under dual-carrier W-CDMA at 28V. Equipped with integrated input matching to simplify PCB layout, this device adopts earless flanged SOT502B air-cavity packaging and withstands 10:1 VSWR mismatch. Note: This model is officially obsolete by Ampleon.

Core Advantages

High Efficiency & 135W Peak Saturation Output Power

Supplies up to 135W P1dB peak saturated output power with stable performance for sub-GHz cellular power amplifiers and reduces thermal burden for transmitting devices.

Wide Sub-GHz Band Coverage (700MHz to 1000MHz)

Tuned for 700~1000MHz wireless infrastructure, suitable for 800/900MHz cellular networks and 868MHz,915MHz ISM radio devices.

Built-In Input Matching Simplifies PCB Development

The integrated input impedance matching circuit cuts peripheral components, lowers RF layout difficulty and shortens product development cycles.

High Ruggedness & Reliable Thermal Performance

Earless flanged ceramic air-cavity package with 0.56K/W low thermal resistance, maximum junction temperature up to 225°C, tolerates 10:1 full-phase load mismatch without permanent damage.

Key Specifications

BrandAmpleon / NXP Semiconductors
RoHS StatusRoHS Compliant / Lead-Free / Green
EDA/CADSymbol, Footprint & 3D Model Available
Warranty1-Year Standard Quality Warranty
Package / CaseSOT502B
Mounting TypeChassis Mount / Flange Mount
Surface Marking / SilkscreenBLF6G10LS-135R Marking
Transistor TypeLDMOS (Lateral Diffused Metal Oxide Semiconductor)
Frequency Range700 MHz to 1000 MHz
Output Power (P1dB Peak)135 W (Typical at 28V)
Average Output Power (W-CDMA)26.5 W (2-carrier W-CDMA, Vds=28V)
Power Gain19.5 dB (960MHz Continuous Wave); 21.0 dB (Dual-carrier W-CDMA)
Drain Efficiency>50% (CW); 28.0% under dual-carrier W-CDMA test
Operating Voltage (VDS)28 V (Nominal)
Drain-source Breakdown Voltage V(BR)DSS65 V
Max Continuous Drain Current ID32 A
Quiescent Drain Current IDQ950 mA (Typical Bias Point)
ACPR-39 dBc (3GPP W-CDMA Test Standard)
Thermal Resistance Rth(j-case)0.56 K/W
Ruggedness (VSWR)10:1 through all phases
Drain-Source On Resistance (Rds(on))100 mΩ @ Vgs=3.75V
Threshold Voltage (Vgs(th))2.4 V
Operating Junction TemperatureUp to +225°C
Storage Temperature Range-65°C ~ +150°C
Packaging FormatTray / Tube (,112 packing suffix)
Lifecycle StatusObsolete / End of Life

Typical Applications

  • GSM, EDGE, W-CDMA, and LTE sub-GHz cellular base station power amplifiers
  • Macro-cell and micro-cell telecom transmitter final and driver stages
  • Industrial, Scientific, and Medical (ISM) RF power generators in the 868MHz and 915MHz bands
  • Radio repeaters, trunked radio systems, and public safety communication infrastructure
  • Broadcasting transmitters and RF test equipment

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Shipping TimeShipped within 1-2 business days
Delivery Time3-7 working days worldwide
Shipping MethodsDHL, UPS, FedEx, EMS
Payment MethodsT/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

For datasheet, sample requests, stock check, bulk pricing and alternative model recommendation, please use the Quick Inquiry form. We will reply within 24 hours.

Frequently Asked Questions

Q1: What does the “,112” suffix mean in BLF6G10LS-135R,112?

A: The “,112” suffix is official packaging code for tube/tray format, it will not change electrical parameters of the transistor.

Q2: What frequency band is BLF6G10LS-135R,112 optimized for?

A: Optimized for 700MHz to 1000MHz frequency band, suitable for cellular sub-GHz network and 868/915MHz ISM equipment.

Q3: Does BLF6G10LS-135R,112 include built-in impedance matching?

A: Internal input matching is integrated. The output side requires external matching circuit design according to application requirements.

Q4: How to install SOT502B package for sufficient heat dissipation?

A: Securely fix the flange to flat, smooth heatsink with screws. Thermal interface material (thermal grease/pad) is required between flange and heatsink to reduce thermal resistance.

Q5: Is BLF6G10LS-135R,112 still in production?

A: This model is officially obsolete (end of life) by Ampleon. Contact us to get recommended alternative LDMOS RF transistors.

Q6: What are the pin definitions of SOT502B package?

A: Pin1=Drain, Pin2=Gate, Pin3=Source; the metal flange is connected to Source terminal.

Q7: What is the main difference between this model and similar sub-GHz RF power transistors?

A: It features integrated input matching, stable linearity for W-CDMA systems and excellent load mismatch tolerance. Many competing devices need full external input and output matching circuits.

Q8: Are there direct pin-to-pin compatible replacements for BLF6G10LS-135R,112?

A: There is no fully pin-to-pin equivalent model on the market. We can recommend similar Ampleon LDMOS devices matched for 700–1000MHz after receiving your working voltage and application specifications.

Q9: Can I directly replace it with LDMOS transistors from other manufacturers?

A: Direct plug-and-play replacement is not advised. Different brands differ in input impedance, thermal resistance and linear performance. Matching network readjustment is necessary if switching competitors’ components.

[next_prev_pages]
Related Products
Scroll to Top