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BLF6G20-75
BLF6G20-75
| Part Number | BLF6G20-75 |
|---|---|
| Manufacturer | Ampleon / NXP Semiconductors |
| Category | Discrete Semiconductor Products / Transistors > RF FETs, MOSFETs |
| Description | 63W Peak CW LDMOS Power Transistor, 1800 MHz to 2000 MHz Frequency Range, SOT502A Flange Ceramic Package, Obsolete (OBS) status. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
BLF6G20‑75 is an N‑channel LDMOS RF power transistor from Ampleon (NXP), designed for 1800‑2000 MHz cellular base‑station amplifiers. It delivers 63 W peak saturated CW power and 29.5 W linear output under GSM‑EDGE multi‑carrier signals. This obsolete(OBS) device features 19 dB gain, integrated input matching and internal ESD protection, housed in SOT502A ceramic flange package for high VSWR ruggedness.
Core Advantages
1800‑2000 MHz Cellular Band Optimized
Stable 19 dB gain, excellent linearity for GSM, EDGE, W‑CDMA and LTE infrastructure applications, typical operating band 1930‑1990 MHz.
High‑Efficiency Dual‑Mode Power Performance
63 W saturated CW power and 29.5 W linear output; 52% saturation efficiency and 37.5% efficiency under GSM‑EDGE modulation, lowering cooling and power consumption requirements.
Built‑in Input Matching
Integrated input matching simplifies PCB layout, reduces external components and guarantees consistent broadband performance.
Superior Ruggedness with ESD Protection
Withstands 10:1 full‑phase VSWR mismatch; internal ESD protection improves long‑term reliability for harsh base‑station operating environments.
Key Specifications
| Brand | Ampleon / NXP Semiconductors |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free |
| EDA / CAD | PCB Footprint & 3D Model Available upon Request |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | SOT502A / Flanged Ceramic Package |
| Mounting Type | Chassis Mount / Bolt-Down Flange Mount |
| Surface Marking / Silkscreen | BLF6G20-75 |
| Transistor Type | LDMOS (N-Channel Enhancement-Mode) |
| Operating Frequency Range | 1800 MHz to 2000 MHz (Broadband), typical 1930-1990 MHz |
| Peak Saturated Output Power (CW) | 63 W (CW @28V, 1930MHz) |
| Linear Output Power (GSM-EDGE) | 29.5 W (Typical @28V) |
| Power Gain (Gps) | 19 dB (Typical at 1930 MHz) |
| Drain Efficiency (ηD) | 52% (Saturated CW), 37.5% (GSM-EDGE multi-carrier) |
| Drain-Source Voltage (VDSS) | 65 V (Max Rating), 28V (Nominal Operating) |
| Gate-Source Voltage (VGS) | -0.5 V to +13 V (Operating Range) |
| Operating Junction Temperature (Tj) | Up to +225°C |
| Storage Temperature (Tstg) | -65 ℃ ~ +150 ℃ |
| Thermal Resistance (Rth(jc)) | 0.9 K/W (Junction to Case) |
| ACPR (Adjacent Channel Power Ratio) | < -61.5 dBc (Typical @400kHz offset, GSM-EDGE) |
| Maximum Drain Current (ID) | 18 A (Absolute Maximum Rating, not operating point) |
| VSWR Ruggedness | 10:1 full-phase load mismatch withstand @28V supply |
Typical Applications
- GSM, EDGE, W-CDMA, and LTE Base Station Power Amplifiers (PA)
- 1.8 GHz – 2.0 GHz Wireless Infrastructure Transceivers
- Main and Peak Amplifier Stages in Doherty Power Amplifier Configurations
- Macrocell, Microcell, and Remote Radio Head (RRH) Modules
- Repeaters and Distributed Antenna Systems (DAS)
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What frequency range does BLF6G20‑75 support?
A: It works at 1800‑2000 MHz, best performance at 1930‑1990 MHz for base‑station amplifiers.
Q2: What is the real output power of BLF6G20‑75?
A: 63W peak saturated CW power; 29.5W linear power for GSM‑EDGE. Suffix “75” is part code, not power value.
Q3: How to mount SOT502A package properly?
A: Bolt firmly onto flat clean heatsink with thermal grease for good heat dissipation to avoid overheating.
Q4: What do suffix ,112 / ,135 mean?
A: They are production batch suffixes. Electrical specs, pinout and package are identical, direct pin‑to‑pin swap available.
Q5: What is low‑thermal‑resistance version?
A: BLF6G20LS‑75 (SOT502B, Rth(j‑c)=0.75 K/W), same electrical parameters, better heat dissipation.
Q6: What parts can replace obsolete BLF6G20‑75?
A: Pin‑to‑pin replacement: BLF6G20LS‑75. New design option: BLF6G21/6G22 series LDMOS or GaN devices.
Q7: Does it include input matching and ESD protection?
A: Yes. Built‑in input matching and ESD protection simplify PCB layout and improve reliability.
Q8: What is its VSWR withstand capability?
A: Handles 10:1 full‑phase load mismatch under 28V supply for robust amplifier operation.
Q9: Can it be used for multi‑carrier linear base‑station?
A: Yes, optimized for GSM / EDGE / W‑CDMA / LTE, typical ACPR ‑61.5dBc @400kHz offset.
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