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BLF7G20LS-200,112
BLF7G20LS-200,112
| Part Number | BLF7G20LS-200,112 |
|---|---|
| Manufacturer | Ampleon / Former NXP Semiconductors |
| Category | RF LDMOS Power Transistor |
| Description | RF LDMOS Power Transistor,1805~1990 MHz,28V,200W Peak,55W Average,18dB Gain,Integrated Input Match,SOT502B |
| Stock Status | In Stock |
| Origin | Original Authentic |
Product Overview
The BLF7G20LS-200,112 is an N-channel enhanced-mode LDMOS power transistor from Ampleon (formerly NXP). Optimized for 1805–1990 MHz W-CDMA/DCS base station applications. Operating at 28V, it provides 55W average output power under 2-carrier W-CDMA test conditions. Equipped with integrated input matching to simplify PCB layout. Housed in SOT502B earless flange ceramic air-cavity package, supporting robust operation under VSWR 10:1 full-phase load mismatch.
Core Advantages
Wideband DCS/W-CDMA Infrastructure Support
Tuned for 1805–1990 MHz cellular base stations, suitable for 2G/3G multi-carrier linear power amplifiers.
Integrated Matching & ESD Protection
Built-in input matching reduces peripheral components; integrated ESD protection enhances anti-interference capability.
Excellent Load Mismatch Robustness
Withstands VSWR 10:1 full-phase mismatch, lowering failure risks caused by unstable antenna loads.
Reliable Linear RF Performance
18dB typical gain and low ACPR, ideal for Doherty amplifier architectures in telecom base station equipment.
Key Specifications
| Brand | Ampleon / NXP Semiconductors |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD Resource | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | SOT502B (Flanged Ceramic Air-Cavity Package,3 pins) |
| Mounting Type | Chassis Mount / Flange Mount |
| Surface Marking | BLF7G20LS-200 Marking |
| Transistor Technology | LDMOS (Lateral Diffused Metal Oxide Semiconductor Gen7) |
| Frequency Band | 1805 MHz to 1990 MHz (DCS / W-CDMA Base Station) |
| Average Output Power | 55 W (2-carrier W-CDMA, Class-AB) |
| Peak Output Power (P1dB) | 200 W (Typical at 28V) |
| Power Gain (Gp) | 18 dB (Typical @1805~1880 MHz) |
| Drain Efficiency | 33% typical (2-carrier W-CDMA); >48% under pulsed test condition |
| Operating Drain Voltage (VDS) | 28 V (Nominal) |
| Drain-source Breakdown Voltage V(BR)DSS | ≥65 V |
| Gate Threshold Voltage VGS(th) | 1.5 ~ 2.3 V (ID = 1.5mA) |
| Maximum Gate-source Voltage VGS | -0.5 V ~ +13 V |
| Maximum Continuous Drain Current | 50.6 A |
| Load Mismatch Ruggedness | VSWR = 10:1 through all phases |
| Maximum Junction Temperature | Up to +225°C (Recommended continuous operation ≤ 200°C) |
| Storage Temperature Range | -65°C ~ +150°C |
| Thermal Resistance Rth(j-c) | 0.27 K/W |
| ACPR (Adjacent Channel Power Ratio) | -29 dBc typical |
| Input Return Loss | ≤10 dB |
| Internal Matching | Input Matching Integrated |
| ESD Protection | Integrated ESD Protection |
| Packaging Format | Tray / Tube (112 packing suffix stands for tube packaging) |
Typical Applications
- DCS 1800 / W-CDMA 3G Cellular Base Station RF Power Amplifiers
- Multi-carrier Linear Power Amplifier & Doherty Amplifier Systems
- Infrastructure Radio Transmitter for Telecommunication Equipment
Order & Shipping Information
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Lead Time | Ship within 1-2 working days for stock items |
| Shipping Options | DHL, UPS, FedEx, EMS |
| Payment Terms | T/T, PayPal, Credit Payment Available |
Technical Support
If you require official datasheet, PCB reference circuit, BOM quotation or bulk price, please submit inquiry form, we will reply you within 24 hours.
Frequently Asked Questions
Q1: What is the difference between BLF7G20LS-200 and BLF7G20LS-200,112?
A: The main chip specifications are fully identical. Suffix ,112 only indicates tube packaging version, no difference in electrical RF performance.
Q2: What compatible or alternative models can replace BLF7G20LS-200?
A: Common alternatives for 1805~1990 MHz 28V LDMOS: BLF6G21LS series, MRF18060N. Note: Package, gain and matching circuit differ, PCB layout & input matching need re-tuning after replacement.
Q3: Can this transistor work under saturated pulse mode instead of linear W-CDMA mode?
A: Yes. It can achieve over 48% drain efficiency under pulsed saturated operation, but linearity performance will drop, not recommended for multi-carrier telecom linear amplifier.
Q4: Is BLF7G20LS-200 suitable for Doherty amplifier design?
A: Yes, this device is widely used as carrier or peaking amplifier inside DCS/W-CDMA Doherty base station power amplifier systems.
Q5: What is the long-term safe operating junction temperature?
A: Absolute maximum junction temperature reaches 225°C. To extend service life, we recommend continuous operation controlled below 200°C with sufficient heat sink.
Q6: What is the difference between BLF7G20LS-200 and BLF7G22LS series?
A: BLF7G20LS targets 1805~1990MHz DCS band; BLF7G22LS works for higher frequency range. They cannot directly pin-to-pin replace without circuit matching adjustment.
Q7: Does this device need external input matching components?
A: No, internal input matching circuit is integrated. Output matching circuit still needs to be designed according to your target impedance.
Q8: How about anti-load mismatch capability?
A: It can survive VSWR=10:1 all-phase mismatch test, much higher robustness than many older generation LDMOS products, improving field equipment stability.
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