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BLF7G27LS-75P
BLF7G27LS-75P
| Part Number | BLF7G27LS-75P |
|---|---|
| Manufacturer | Ampleon / NXP Semiconductors |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs |
| Description | 75W Single-Ended Gen7 LDMOS RF Power Transistor, Wideband 2300MHz to 2700MHz, 28V Drain Operation, Earless SOT1121B Ceramic Air-Cavity Package, Internal Input & Output Matching. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The BLF7G27LS-75P is a high-performance 75W single-ended Gen7 N-channel enhancement-mode LDMOS RF power transistor from Ampleon (formerly NXP). Optimized for 2300MHz–2700MHz wideband wireless infrastructure, it suits W-CDMA, LTE and multi-carrier systems using Class-AB and Doherty amplifier architectures. This device features built-in input & output matching, packaged in earless SOT1121B ceramic air-cavity housing, offering outstanding mismatch ruggedness and low thermal resistance for macro & micro cellular base station transmitters.
Core Advantages
2300~2700MHz Wideband 75W Continuous Wave Output
Delivers 75W saturated CW power at 28V supply, fully covering 2.3/2.4/2.6GHz bands for broadband wireless infrastructure.
7th Generation LDMOS Technology
N-channel enhancement-mode design with stable gain and improved linearity for high PAPR digital modulation signals.
Integrated Input & Output Matching
Built-in matching network reduces peripheral components, simplifies PCB layout and accelerates amplifier development.
High Ruggedness & Low Thermal Resistance Package
SOT1121B earless ceramic air-cavity package with 0.5K/W thermal resistance, withstands full-phase VSWR 10:1 load mismatch.
Key Specifications
| Brand | Ampleon / NXP Semiconductors |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | SOT1121B (Earless Flangeless Ceramic Package) |
| Mounting Type | Flangeless Surface Mount |
| Surface Marking / Silkscreen | BLF7G27LS-75P Marking |
| Transistor Technology | LDMOS (Lateral Diffused Metal Oxide Semiconductor Gen7, N-channel Enhancement Mode) |
| Frequency Band | 2300 MHz to 2700 MHz (2.3GHz – 2.7GHz Wideband) |
| Saturated Output Power (Psat) | 75 W CW (Typical at Vds=28V) |
| Power Gain | 17 dB (Typical @2350MHz, Vds=28V, Idq=650mA) |
| Drain Efficiency | Typically 26% @12W Output (Class-AB / Doherty configurations) |
| Nominal Drain-Source Voltage | 28 V |
| Breakdown Voltage V(BR)DSS | 65 V (Absolute Maximum Rating) |
| Quiescent Drain Current (Idq) | 650 mA Typical |
| Maximum Continuous Drain Current | 18 A |
| Thermal Resistance (Rth(j-c)) | 0.5 K/W |
| Load Mismatch Ruggedness | VSWR = 10:1 through all phases |
| Storage Temperature Range | -65°C ~ +200°C |
| Operating Junction Temperature | Up to +200°C |
| Packaging Format | Tape & Reel / Tube |
Typical Applications
- 2300MHz~2700MHz LTE / 4G cellular base station RF power amplifiers
- W-CDMA & IS-95 communication base station transmitter stages
- High-efficiency Doherty power amplifier for wireless broadband access
- Micro-cell & macro-cell RF final power amplification modules
- Commercial 2.3~2.7GHz industrial RF power amplification equipment
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card |
Technical Support
For datasheet, sample requests, stock check, bulk pricing or compatibility consultation, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What does the “LS” suffix stand for in BLF7G27LS-75P?
A: LS represents earless flangeless SOT1121B ceramic package, designed for compact surface-mount thermal installation without mounting ears.
Q2: What frequency range is BLF7G27LS-75P optimized for?
A: Wideband range 2300MHz ~ 2700MHz, supports all communication bands within 2.3GHz to 2.7GHz.
Q3: Does this transistor include internal matching networks?
A: Yes, integrated input and output impedance matching, compatible with standard 50-ohm RF system.
Q4: What compatible or alternative devices can replace BLF7G27LS-75P?
A: Direct series alternative: BLF7G27LS-90P (90W higher power version, same package & frequency band). Cross-brand alternative requires circuit re-matching, no pin-to-pin direct cross-brand replacement available.
Q5: What is the difference between BLF7G27LS-75P and BLF7G27LS-90P?
A: Same SOT1121B package, same frequency range. BLF7G27LS-75P max CW power 75W; BLF7G27LS-90P max CW power 90W, higher gain, suitable for higher output power designs.
Q6: Can BLF7G27LS-75P work outside the 2300-2700MHz frequency range?
A: Not recommended. Internal matching is tuned for 2.3~2.7GHz, performance and stability will drop significantly outside this band.
Q7: How to implement thermal design for SOT1121B earless package?
A: The metal base must be fully attached to heatsink or thick copper PCB with high-performance thermal interface material to control junction temperature.
Q8: Are there multiple packaging versions available for BLF7G27LS-75P?
A: Yes, supplied in Tape & Reel and Tube packaging versions, you can specify packaging type during inquiry.
Q9: Is BLF7G27LS-75P suitable for Doherty amplifier topology?
A: Yes, the device structure is optimized for Class-AB and Doherty architectures, widely deployed in broadband base station Doherty PA modules.
Q10: Is BLF7G27LS-75P pin-to-pin compatible with other BLF series devices?
A: Only interchangeable with other LS suffix SOT1121B parts in the same family; other package variants cannot be directly swapped without PCB modification.
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