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BLM10D1822-61ABG
BLM10D1822-61ABG
| Part Number | BLM10D1822-61ABG |
|---|---|
| Manufacturer | Ampleon Netherlands B.V. |
| Category | Discrete Semiconductor Products > RF Transistors – FETs, MOSFETs |
| Description | 61W LDMOS fully integrated 2-stage power amplifier module engineered for wireless infrastructure basestation architectures operating within the 1805 MHz to 2170 MHz frequency spectrum. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The BLM10D1822-61ABG is Ampleon’s ultra-linear 2-stage asymmetric Doherty MMIC power amplifier for modern wireless infrastructure, covering 1805 MHz–2170 MHz telecom bands.
It integrates main and peaking LDMOS stages to deliver high PAE under high PAPR signals. Pre-matched to standard 50-ohm I/O ports, it eliminates complex RF layout tuning. Housed in a multi-pin SMT package with a high-conductivity copper thermal sink, this module is ideal for multi-carrier macro base stations, small cells and massive MIMO active antenna systems.
Core Advantages
Integrated Asymmetric Doherty Architecture
Natively combines main and peak active stages to realize excellent back-off efficiency profiles, significantly suppressing thermal generation and reducing operational energy costs in cellular basestations.
Broadband Functional Range
Delivers continuous, highly stable gain and linearity across the entire 1805 MHz to 2170 MHz envelope, enabling single-layout deployments across multiple global LTE and 5G NR frequency brackets.
Simplified 50Ω SMT System Matching
Internal input and output circuitry are pre-matched to 50 ohms, drastically shrinking prototyping design timelines, lowering the external discrete BOM count, and ensuring excellent repeatability on assembly lines.
Superior ESD and Dynamic Ruggedness
Features integrated protection diodes to secure robust ESD handling capabilities, alongside excellent VSWR mismatch ruggedness to prevent catastrophic failures caused by antenna array disruptions.
Key Specifications
| Brand | Ampleon LDMOS Power Modules |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Halogen-Free Materials |
| EDA/CAD Model | 3D CAD Step Models, PCB Symbol Library & Footprints available upon request |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | SOT1212-3 / OMP-400-8G |
| Mounting Type | Surface Mount Technology (SMD/SMT) |
| Surface Marking / Silkscreen | BLM10D1822-61ABG / Ampleon Identity Logo, Traceable Assembly Run Code, and Date Matrix Stamp |
| Operational Frequency Window | 1805 MHz to 2170 MHz Continuous Coverage |
| Maximum Peak Output Power (P3dB) | 61 W (Typical configuration at 1.8 GHz to 2.2 GHz) |
| Linear Output Power (PLin) | 38 W Typical @ 8dB PAPR Back-off |
| Power Gain (Gp) | 28.5 dB Typical (Measured at average power back-off state) |
| Drain Efficiency (ηd) | 43% Typical at 8 dB Power Back-off (Doherty Configuration) |
| Quiescent Drain Current (Idq) | 1150 mA Typical (Vds=28V DC Supply) |
| IMD3 Intermodulation Distortion | ≤ -45 dBc under rated linear output power condition |
| Input Return Loss | ≤ -12 dB across full 1805~2170 MHz band |
| Output Return Loss | ≤ -14 dB across full 1805~2170 MHz band |
| Supply Operating Voltage (VDS) | 28 V to 32 V DC Typical Operation Rail |
| Input/Output Impedance | Internally Matched to 50 Ω |
| Operating Case Temperature Range | -40°C to +110°C (Industrial/Telecom Basestation Grade Window) |
| Storage Temperature Range | -55°C to +125°C Long-term storage tolerance |
Typical Applications
- Asymmetric Doherty Power Amplifier Stages for 4G LTE and 5G NR Macro Basestations
- High-Density Small Cell Wireless Infrastructure Transceivers and Remote Radio Heads (RRH)
- Massive MIMO Active Antenna Systems (AAS) and High-Capacity Distributed Antenna Arrays (DAS)
- RF Drivers and Final Stage Linear Transmitters for Repeater Stations and Signal Boosters
- Industrial and Commercial Wireless Data Link Transmission Equipment and Test Benches
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: Is your currently available inventory of the BLM10D1822-61ABG 100% genuine and original?
A: Yes, we guarantee that all BLM10D1822-61ABG modules in our stock are 100% brand-new, factory-original products directly from Ampleon. Every batch is completely traceable, audited under rigorous quality controls, and packed in original moisture-barrier packaging with full ESD protection.
Q2: What are the primary performance advantages of integrated LDMOS modules compared to discrete transistor layouts?
A: Integrated LDMOS modules like the BLM10D1822-61ABG consolidate multi-stage amplification circuits, biasing components, and asymmetrical Doherty dividers onto a single substrate. This eliminates the need for complex, manual RF copper balancing on the PCB, vastly improves thermal tracking between stages, and guarantees reliable, consistent performance in high-volume production.
Q3: Does the BLM10D1822-61ABG require external 50-ohm matching stubs or tuning chips?
A: No, the module features on-chip internal matching blocks that interface directly with standard 50-ohm transmission lines at both the input and output ports. This greatly simplifies layout design, though standard external DC blocks and low-impedance supply decoupling capacitors are still required on the bias lines.
Q4: How can our design department request official ADS simulation models, schematic symbol footprints, or ask for high-volume contract pricing?
A: Please complete the Quick Inquiry web form on this page with your project parameters. Our dedicated technical support desk will handle your request and dispatch the available engineering documentation and a commercial quote within 24 hours.
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