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CGH40045P
CGH40045P
| Part Number | CGH40045P |
|---|---|
| Manufacturer | MACOM (Former Wolfspeed / Cree) |
| Category | Discrete Semiconductor Products > Transistors – FETs, MOSFETs – RF |
| Description | 45W RF Power GaN HEMT Transistor, DC to 4.0 GHz, 28V, Flanged Pill Ceramic Package (440109 / 440203). |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
CGH40045P is a 45W GaN‑on‑SiC HEMT from MACOM (ex‑Wolfspeed/Cree). Operating at 28V DC, it supports DC‑4.0 GHz wideband RF amplification. The flanged ceramic pill package enables direct heatsink mounting, ideal for cellular infrastructure, radar and broadband RF power systems.
Core Advantages
Wide DC‑4.0 GHz Bandwidth
Covers multi‑band requirements for wireless, industrial and military RF designs.
GaN‑on‑SiC Technology
High power density and superior thermal performance compared to LDMOS and GaAs devices.
High Gain & 55% Typical Efficiency
16 dB small‑signal gain @2.0 GHz, lowers power consumption and cooling requirements.
Flanged High‑Heat‑Dissipation Package
Chassis‑mountable ceramic package, low thermal resistance, strong VSWR mismatch tolerance.
Flanged pill ceramic package for chassis mounting, low thermal resistance, good robustness under VSWR mismatch conditions.
Key Specifications
| Brand | MACOM (Former Wolfspeed / Cree) |
|---|---|
| RoHS Status | RoHS Compliant / Lead‑Free |
| EDA / CAD | PCB Footprint & 3D Model Available upon Request |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | Flanged Ceramic Pill Package (Type 440109 / 440203) |
| Mounting Type | Chassis Mount / Flange Mount |
| Surface Marking / Silkscreen | CGH40045P |
| Transistor Type | RF GaN HEMT |
| Frequency Range | DC to 4.0 GHz |
| Output Power (Pout) | 45 W (P1dB / PSAT) |
| Operating Drain Voltage (Vdd) | 28 V (Nominal) |
| Small Signal Gain | 16 dB (Typical at 2.0 GHz) / 12 dB (at 4.0 GHz) |
| Drain Efficiency | Up to 55% (Typical) |
| Case Operating Temperature | -40°C to +150°C |
| Maximum Junction Temperature | +225°C (Absolute Maximum Rating) |
| Storage Temperature | -65°C ~ +150°C |
| Thermal Resistance (Junction to Case) | 2.8 °C/W |
| Saturated Drain Current | 14.0 A (Typ) |
| Drain‑Source Breakdown Voltage | 84 V (Min) |
Typical Applications
- Broadband Commercial and Tactical Wireless Communications
- Cellular Infrastructure Power Amplifiers (LTE, 5G Sub‑6GHz, WiMAX)
- Radar Systems, Electronic Warfare (EW), and Jamming Transmitters
- Industrial, Scientific, and Medical (ISM) RF Generators
- Test and Measurement Equipment & High‑Power RF Drivers
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What is the operating frequency and output power of CGH40045P?
A: CGH40045P works DC‑4.0 GHz, provides 45W RF output power with 28V DC supply.
Q2: What technology is CGH40045P based on?
A: It adopts GaN‑on‑SiC technology, offering higher power density and better thermal performance than LDMOS or GaAs.
Q3: What are the differences between CGH40045P, CGH40045SF and CGH40045F‑AMP?
A: CGH40045P: flanged package for heatsink mounting. CGH40045SF: flange‑free, same electrical specs, needs external fixture. CGH40045F‑AMP: evaluation demo board, not standalone transistor. P and SF are mechanically non‑interchangeable.
Q4: What are alternative compatible parts for CGH40045P?
A: CGH40045SF is electrically identical with different package. Alternative GaN options: CGH40060P (60W), CGH40025P (25W). Always verify circuit and mechanical dimensions before replacement.
Q5: What is the difference between case temperature and maximum junction temperature?
A: ‑40℃~+150℃ is long‑term recommended case operating temperature. +225℃ is absolute maximum junction rating, continuous operation at 225℃ will damage the device.
Q6: Can CGH40045P be used for broadband amplifier projects?
A: Yes, DC‑4.0 GHz wide bandwidth makes it suitable for multi‑band and broadband RF power amplifiers.
Q7: How to get datasheet, CAD files or bulk quotation?
A: Submit quick inquiry form for official datasheets, footprints, stock status and volume pricing.
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