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DE475-102N21A
DE475-102N21A
| Part Number | DE475-102N21A |
|---|---|
| Manufacturer | IXYS / Littelfuse |
| Category | Discrete Semiconductor Products > Transistors – FETs, MOSFETs – Single |
| Description | 1000V 21A High‑Frequency RF Power MOSFET, DE475 6‑Pin Flange Package, N‑Channel, Fast Switching. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The DE475‑102N21A is N‑Channel RF power MOSFET from IXYS (Littelfuse). Rated 1000V Vdss, 21A continuous drain current, max operating frequency up to 30MHz. DE475 low‑inductance flange package delivers excellent thermal transfer and high substrate isolation (>2500V). Optimized for industrial RF heating, plasma generator and high‑power RF amplifier applications.
Core Advantages
High Voltage & Current Handling
1000V drain‑source voltage with 21A continuous drain current, supports high‑power RF operation under variable load conditions.
Low‑Inductance DE475 RF Package
6‑pin screw‑mount flange package with ceramic isolated substrate, low parasitic inductance for stable high‑frequency performance up to 30MHz.
Ultra‑Fast Switching Performance
Low gate charge and capacitance reduce switching losses, support nanosecond‑level fast switching for resonant and RF power circuits.
Excellent Heat Dissipation
High thermal conductivity isolated substrate, total power dissipation up to 1800W with adequate external heatsink.
Key Specifications
| Brand | IXYS / Littelfuse |
|---|---|
| RoHS Status | RoHS Compliant / Lead‑Free |
| EDA / CAD | PCB Footprint & 3D Model Available upon Request |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | DE475 RF High‑Power Flange Package, 6‑Pin |
| Mounting Type | Chassis Mount / Screw Flange Mount |
| Surface Marking / Silkscreen | DE475-102N21A |
| FET Type | N‑Channel RF Power MOSFET |
| Drain‑to‑Source Voltage (Vdss) | 1000 V |
| Continuous Drain Current (Id) | 21 A (Tc=25℃) |
| Peak Pulsed Drain Current (ID25) | 24 A |
| Rds On (Typical) | 0.41 Ohms @ Vgs = 15V (Pulse Test) |
| Max Operating Frequency | Up to 30 MHz |
| Total Power Dissipation (Pd) | 1800 W @ Tc=25℃ (with adequate heatsink) |
| Gate‑Source Voltage (Vgs) | ±20 V Continuous, ±30 V Transient |
| Substrate Isolation Voltage | >2500 V |
| Operating Junction Temperature (TJ) | -55°C to +175°C |
Typical Applications
- High‑Power Industrial RF Heating, Induction Heating, and Laser Drivers
- Semiconductor Plasma Etching and Deposition Generators
- Medical MRI RF Power Amplifiers and Diagnostic Transmitters
- High‑Frequency Resonant Switch‑Mode Power Supplies
- Resonant DC‑DC Converters, Wireless Power Transfer, HF Radar Systems
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What does suffix “102N21A” mean for DE475‑102N21A?
A: “102” = 1000V Vdss rating; “N” = N‑Channel MOSFET; “21” = 21A continuous drain current; suffix “A” stands for hardware revision.
Q2: Why choose DE475 flange package for RF power MOSFET?
A: DE475 6‑pin flange package uses isolated ceramic substrate, ultra‑low parasitic inductance and >2500V substrate isolation voltage, optimized for RF operation up to 30MHz.
Q3: Can DE475‑102N21A be used in resonant SMPS circuits?
A: Yes. Low gate‑charge and fast‑switching features suit high‑voltage resonant power supplies and high‑frequency DC‑DC converters.
Q4: Are there pin‑to‑pin compatible alternative parts?
A: DE475‑series share identical mechanical 6‑pin footprint, e.g. DE475‑080Nxx(800V), DE475‑102N18(18A). Mechanically interchangeable but not electrically drop‑in equivalent. Circuit re‑validation is mandatory before substitution; no full 100% equivalent device on market.
Q5: What risks when replacing with other DE475 suffix variants?
A: Same package only guarantees mounting fit. Different suffix changes Vdss, Id, Rds(on) and frequency performance. Direct swap may cause over‑voltage breakdown, burnout or RF efficiency loss. Always cross‑check datasheet.
Q6: What is the difference between continuous Id=21A and peak ID25=24A?
A: 21A is DC continuous rating with sufficient cooling; 24A ID25 is short‑time pulsed peak limit. Do NOT run continuous current at 24A, device permanent damage may occur without derating.
Q7: What heatsink requirement for 1800W power dissipation?
A: 1800W rating is valid @Tc=25℃. Requires large‑capacity external heatsink plus forced‑air cooling. Device will overheat and fail without adequate thermal solution.
Q8: How can I get datasheet, footprint and mechanical drawings?
A: Request datasheet, CAD footprint and dimension drawings via our quick inquiry form, together with stock status and volume quotation.
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