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FPD1000AS

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FPD1000AS

Part NumberFPD1000AS
ManufacturerFiltronic
CategoryDiscrete Semiconductor Products > Transistors > FETs > RF FETs
DescriptionHigh Linearity Medium Power GaAs pHEMT Transistor, DC to 5 GHz, 1.26W P1dB, SOT‑89 Surface Mount Package.
Stock StatusIn Stock
OriginOriginal Factory

Product Overview

The FPD1000AS is a Filtronic AlGaAs/InGaAs GaAs pHEMT transistor, covering DC‑5 GHz. It delivers +31 dBm (1.26 W) P1dB output power and 50% PAE at 1.8 GHz. Housed in SOT‑89 SMT package, it suits high‑linearity driver/output stages for cellular base stations, microwave backhaul and wireless communication systems.

Core Advantages

High Linearity & Power

Delivers +31 dBm P1dB and +43 dBm OIP3, ideal for high‑linearity wireless transmitter driver and power stages.

Wide Bandwidth

Operates from DC to 5 GHz, supporting multi‑band cellular and microwave communication applications.

Good Efficiency

50% power‑added efficiency reduces power consumption and simplifies thermal design.

Standard SOT‑89 Package

3‑pin SOT‑89 surface‑mount package with exposed tab, supports automated SMT assembly and good heat dissipation.

Key Specifications

BrandFiltronic
RoHS StatusRoHS Compliant / Green (Lead‑Free)
EDA / CADPCB Footprint & 3D Model Available upon Request
Warranty1‑Year Standard Quality Warranty
Package / CaseSOT‑89
Mounting TypeSurface Mount (SMT)
Surface Marking / SilkscreenP1F Marking
Transistor TechnologyAlGaAs/InGaAs GaAs pHEMT
Frequency RangeDC to 5.0 GHz
Output Power at P1dB+31 dBm (1.26 W Typ. @ 1.8 GHz)
Power‑Added Efficiency (PAE)50% (Typ. @ 1.8 GHz)
Power Gain15 dB (Typ. @ 1.8 GHz)
Output IP3 (OIP3)+43 dBm (Typ. @ 1.8 GHz)
Drain‑Source Voltage (Vds)8.0 V DC Max
Gate‑Source Voltage (Vgs)-3.0 V to +0.5 V DC
Operating Junction TemperatureUp to +175°C
Recommended Vds Operating Range5 V ~ 8 V DC (Reference upper limit 10V)
Quiescent Drain Current (Idq)200 mA Typical (Class‑AB Bias)
Total Power Dissipation (PTOT)6 W (Derating Required)
Storage Temperature-40°C ~ +150°C

Typical Applications

  • Cellular Base Station Infrastructure (GSM, CDMA, W‑CDMA, LTE Driver Stages)
  • Point‑to‑Point and Point‑to‑Multipoint Microwave Backhaul Radios
  • VSAT Ground Terminals and Satellite Communications Systems
  • Wireless Local Loop (WLL) and WiMAX Power Amplifiers
  • RF Test & Measurement Equipment and Signal Sources

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Shipping TimeShipped within 1‑2 business days
Delivery Time3‑7 working days worldwide
Shipping MethodsDHL, UPS, FedEx, EMS
Payment MethodsT/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.

Frequently Asked Questions

Q1: What is the main function of FPD1000AS?

A: It is a medium‑power GaAs pHEMT RF transistor, used as high‑linearity driver or power amplifier for wireless systems up to 5 GHz.

Q2: What output power can FPD1000AS deliver?

A: Typical P1dB output power is +31 dBm (1.26 W), with 15 dB gain at 1.8 GHz.

Q3: What package is FPD1000AS?

A: 3‑pin SOT‑89 SMT package with exposed metal tab for PCB thermal grounding.

Q4: How to get datasheets, S‑parameters or volume quotes?

A: Documents, stock check and bulk pricing are available via our Quick Inquiry form. We will reply within 24 hours.

Q5: Are there direct drop‑in alternatives for FPD1000AS?

A: No pin‑to‑pin direct replacement. Similar performance can be found in other Filtronic SOT‑89 pHEMTs. Contact our team for substitution suggestions based on your frequency and power requirements.

Q6: What does suffix “AS” mean in FPD1000AS?

A: “AS” denotes SOT‑89 surface‑mount package for FPD1000 series. Different suffixes mean different packages; always verify full part number before ordering.

Q7: Why do search results show TO‑59 package for FPD1000AS?

A: FPD1000AS is SOT‑89 only. TO‑59 belongs to other suffix variants (FPD1000AQ / FPD1000ASSQ). They are not pin‑compatible and cannot be swapped directly.

Q8: What are key operating precautions?

A: This is depletion‑mode pHEMT. Apply negative gate‑source bias before drain voltage. Do not exceed maximum Vds rating of 8 V DC.

Q9: What’s the difference between FPD1000AS and other FPD1000 variants?

A: FPD1000AS is SOT‑89 SMT version. Other variants use different packages or gate widths, with different power and thermal performance. Refer to official datasheet for each model.

Q10: Can FPD1000AS work above 5 GHz?

A: Specified for DC‑5 GHz. Performance degrades sharply beyond 5 GHz; operation above 5 GHz is not recommended.

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