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HTH7G14S030HB
HTH7G14S030HB
| Part Number | HTH7G14S030HB |
|---|---|
| Manufacturer | Watech |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs |
| Description | High‑Efficiency Unmatched RF Power LDMOS Transistor, 1.8‑1400 MHz, 30W Saturation Output Power, 28‑50V DC Operation, ACC0906B‑2L Bolt‑Down Flanged Ceramic Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The HTH7G14S030HB is an unmatched discrete N‑channel L‑band RF power LDMOS transistor from Watech. It delivers 30W saturation output power, typical 17dB gain and 62% drain efficiency under 50V test condition, operating across 28‑50V DC supply. Packaged in ACC0906B‑2L bolt‑down ceramic housing with built‑in enhanced ESD protection, it features low thermal resistance and high mismatch tolerance for radar, avionics, broadcasting, NMR and particle accelerator RF amplifier projects.
Core Advantages
High Gain & Efficiency
17dB typical gain and 62% Psat efficiency, lowering power consumption and heat load.
Enhanced Ruggedness & ESD
Superior VSWR withstand capability without device damage, integrated enhanced ESD protection.
Wide L‑Band Coverage
Covers full 1.8‑1400MHz bandwidth for multiple L‑band application scenarios.
Robust Flanged Package
ACC0906B‑2L package with mounting holes, reliable chassis mounting and excellent thermal performance.
Key Specifications
| Brand | Watech |
|---|---|
| RoHS Status | RoHS Compliant / Lead‑Free |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | ACC0906B‑2L Bolt‑Down / Flanged Ceramic RF Package (HB Suffix) |
| Mounting Type | Chassis Mount / Flange Mount |
| Surface Marking / Silkscreen | HTH7G14S030HB Marking |
| Transistor Type | Unmatched Discrete RF Power LDMOS FET |
| Operating Frequency Range | 1.8 MHz to 1400 MHz (L‑Band) |
| Saturation Output Power | 30 W |
| Drain Operating Voltage (VDS) | 28‑50 V DC, Typical 50 V |
| Power Gain | Typ. 17 dB @ 50V Test Condition |
| Drain Efficiency @ Psat | Typ. 62 % @ 50V Test Condition |
| ESD Feature | Internally Integrated Enhanced ESD Design |
| Operating Junction Temperature (Tj) | -65°C to +150°C |
| Packaging Format | Tray Packaging |
| Production Status | MP (Mass Production) |
Typical Applications
- Analog and Digital Broadcasting
- Meteorological and Aviation Radar, Avionics Transponders
- Private network communication base station
- Industrial Laser Sources and Plasma Equipment
- Nuclear Magnetic Resonance Instruments
- Particle accelerator RF power source
- Solid‑state RF power amplifiers (SSPA) and laboratory transmitters
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What is the operating frequency range for HTH7G14S030HB?
A: It covers full 1.8 MHz‑1400 MHz L‑band, not limited to 1300‑1400 MHz only.
Q2: What supply voltage can HTH7G14S030HB work with?
A: Operating VDS ranges 28‑50V DC. 50V is standard test voltage; output power will decrease when operating below 50V.
Q3: What is the difference between HTH7G14S030H and HTH7G14S030HB?
A: Electrical specs are completely identical: 1.8‑1400 MHz bandwidth, 17dB gain, 62% efficiency @50V. Only package differs. HTH7G14S030H uses ACC0906S‑2L without mounting holes; HTH7G14S030HB uses ACC0906B‑2L with two mounting holes. They are NOT direct drop‑in replacements, PCB footprint must be modified.
Q4: Is HTH7G14S030HB a pre‑matched transistor?
A: No, it is unmatched discrete LDMOS. External input & output matching circuits are required for amplifier design.
Q5: Are there cross‑reference alternative parts?
A: HTH7G14S030H shares same performance but different package. Other brand 30W L‑band LDMOS can be referenced, but gain, efficiency and footprint vary. Full re‑matching is required for cross‑brand replacement.
Q6: What does “MP” production status mean?
A: MP means Mass Production. This is an active mass‑production part, not sampling or obsolete.
Q7: How can I get datasheets, CAD files or volume quotation?
A: Please submit your request via Quick Inquiry form. Our RF team will send datasheet, CAD resources and pricing within 24 working hours.
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