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HTL7G06S011P

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HTL7G06S011P

Part NumberHTL7G06S011P
ManufacturerWATECH (Watech Electronics)
CategoryDiscrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs
Description11W LDMOS RF Power Transistor, 1.8MHz-600MHz VHF/UHF Broadband Operation, DFN/QFN 5×5mm Surface Mount Package.
Stock StatusIn Stock
OriginOriginal Factory

Product Overview

The HTL7G06S011P is an LDMOS RF power transistor from Watech Electronics, designed for high-efficiency RF amplification for VHF/UHF communication equipment. Operating at 1.8MHz–600MHz, it delivers 11W saturated output power under a typical 7.2V supply. Suitable for CW and pulse operation, it features high power-added efficiency and low leakage current. Housed in compact DFN/QFN 5×5mm SMD package with exposed thermal pad, it supports automatic assembly and offers stable performance for land mobile radio, broadcast driver stages and industrial RF devices.

Core Advantages

VHF/UHF Wideband Performance

Consistent gain and power output across 1.8MHz~600MHz band, ideal for two-way radio and shortwave communication.

High Power Added Efficiency

Adopts mature LDMOS technology with typical PAE ≥60%, lowering power consumption and heat emission during continuous operation.

Compact SMD Packaging

DFN/QFN 5×5mm package with exposed thermal pad, compatible with automatic PCB mounting and simplifies thermal layout design.

Excellent Stability & Low Leakage

Drain leakage current ≤10μA, supports CW & pulse mode, ensuring long-term reliability for outdoor communication hardware.

Key Specifications

BrandWATECH (Watech Electronics)
RoHS StatusRoHS Compliant / Lead-Free / Green
EDA/CADSymbol, Footprint & 3D Model Available
Warranty1-Year Standard Quality Warranty
Package / CaseDFN/QFN 5×5mm
Mounting TypeSurface Mount Device (SMD/SMT)
Surface Marking / SilkscreenHTL7G06S011P Marking
Transistor TechnologyLDMOS (Lateral Diffused Metal Oxide Semiconductor)
Frequency Band1.8 MHz ~ 600 MHz (VHF / UHF)
Saturated Output Power11 W (Typ. @7.2V, approx. 40.4dBm)
Input Power0.4 W (26.02 dBm)
Nominal Drain Voltage ($V_{\text{DS}}$)7.2 V (Typical)
Quiescent Drain Current300 mA (Typical)
Power Added Efficiency (PAE)≥60% (Typical)
Drain Leakage Current≤ 10 μA
Operation ModeCW (Continuous Wave) / Pulse
Operating Temperature Range-10°C to +130°C
Storage Temperature Range-55°C to +150°C
Packaging FormatTape & Reel

Typical Applications

  • Land Mobile Radio (LMR) equipment
  • VHF/UHF two-way communication systems
  • Broadcast transmitter driver amplifier stages
  • Shortwave and wireless data transmission devices
  • Industrial RF power amplifiers for ISM band

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Shipping TimeShipped within 1-2 business days
Delivery Time3-7 working days worldwide
Shipping MethodsDHL, UPS, FedEx, EMS
Payment MethodsT/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.

Frequently Asked Questions

Q1: What frequency band is HTL7G06S011P designed for?

A: Optimized for VHF/UHF 1.8MHz~600MHz, widely used for land mobile radio and broadcast driver circuits.

Q2: What is the recommended operating voltage for this RF transistor?

A: Typical drain voltage is 7.2V. Do not exceed maximum rating to prevent permanent damage.

Q3: What package does HTL7G06S011P adopt?

A: DFN/QFN 5×5mm SMD package with exposed thermal pad. PDFN5×5 is the equivalent package marking.

Q4: Does this transistor support continuous wave (CW) operation?

A: Yes, it works for both CW and pulse operation modes.

Q5: Are there compatible alternative LDMOS transistors for replacement?

A: Alternatives need to match frequency, power, voltage and package. Most devices cannot be pin-to-pin swapped. Send your circuit specs for suitable recommendations.

Q6: What thermal design tips for this component?

A: Fully solder exposed pad to PCB GND plane and use thermal vias to lower thermal resistance, keep junction temperature within rated range.

Q7: Can I replace other brand RF transistors directly without circuit adjustment?

A: Direct plug-and-play replacement is not guaranteed. Impedance and gain differ between brands, re-tuning matching network is usually required.

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