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HTN8G03S015P
HTN8G03S015P
| Part Number | HTN8G03S015P |
|---|---|
| Manufacturer | WATECH |
| Category | Discrete Semiconductor Products / RF & Microwave Components > RF Power LDMOS Transistor |
| Description | 15W Un‑unmatched LDMOS Power Amplifier Transistor, 1.8‑300 MHz, TO‑220‑3L Through‑Hole Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The HTN8G03S015P is an unmatched discrete LDMOS RF power transistor by WATECH. Operating at 28V DC, it delivers 15W saturated output power for 1.8‑300 MHz. Housed in TO‑220‑3L through‑hole package, it requires external RF matching circuits and heat sink for broadcasting, radar and industrial RF amplifier applications.
Core Advantages
15W CW RF Output
15W saturated output power across 1.8‑300 MHz bandwidth for continuous‑wave RF amplification.
High Robustness & ESD
Built‑in ESD protection, tolerates high VSWR load mismatch without device damage.
Good Thermal Performance
2.2 ℃/W typical junction‑to‑case thermal resistance, stable performance with proper heat‑sink mounting.
Customizable Matching Design
Un‑unmatched structure supports custom input‑output matching networks to optimize gain and efficiency.
Key Specifications
| Brand | WATECH |
|---|---|
| RoHS Status | RoHS Compliant / Lead‑Free |
| EDA / CAD | PCB Footprint & 3D Model Available upon Request |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | TO‑220‑3L Through‑Hole Package |
| Mounting Type | Through‑Hole Mount |
| Surface Marking / Silkscreen | HTN8G03S015P / Manufacturer Logo / Date & Lot Tracking Codes |
| Component Type | Un‑unmatched RF Power LDMOS Transistor |
| Operating Drain Voltage | 28V DC |
| Frequency Range | 1.8 MHz ~ 300 MHz |
| Saturated Output Power | 15W |
| Impedance Matching | Un‑unmatched, external matching circuit required |
| Thermal Resistance (Rth j‑c) | 2.2 ℃/W (Typical) |
| Operating Ambient Temperature | ‑40°C ~ +65°C |
| Storage Temperature | ‑65°C ~ +150°C |
| Max Junction Temperature | +225°C |
Typical Applications
- Analog and Digital Broadcasting Equipment
- Meteorological and Aviation Radar System
- Private Network Communication Base Station
- Industrial Laser Sources and Plasma Equipment
- Nuclear Magnetic Resonance Instruments & Particle Accelerator
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What are the key features of HTN8G03S015P?
A1: Un‑unmatched 15W LDMOS transistor for 1.8‑300 MHz, 28V operating voltage. It features enhanced ESD protection and high VSWR mismatch resistance, packaged in TO‑220‑3L through‑hole.
Q2: What thermal requirements does HTN8G03S015P have?
A2: This TO‑220‑3L through‑hole device must be fitted with an external heat‑sink. Typical thermal resistance is 2.2℃/W, sufficient heat dissipation is mandatory for continuous‑wave operation.
Q3: Does HTN8G03S015P include built‑in impedance matching?
A3: No. It is an unmatched LDMOS transistor. External input and output RF matching networks are required on PCB to achieve target gain and output power.
Q4: Can HTN8G03S015P apply for SMT reflow soldering?
A4: Not supported. It is through‑hole component for pin‑in welding, incompatible with SMT pick‑and‑place reflow process.
Q5: How to get datasheet and technical documents?
A5: Please submit the inquiry form to obtain datasheets, application notes and evaluation‑board relevant materials.
Q6: Are there cross‑reference or alternative LDMOS models?
A6: Compatible replacements depend on frequency, output power, supply voltage and package. Send your project requirements via inquiry for recommended alternative transistors.
Q7: What is the difference between HTN8G03S015P, EVB1 and EVB2?
A7: HTN8G03S015P is bare transistor in tube package. EVB1 and EVB2 are pre‑matched evaluation boards for 13.56MHz and 60MHz. EVB versions cannot replace the bare transistor directly.
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