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IRFP4868PBF

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IRFP4868PBF

Part NumberIRFP4868PBF
ManufacturerInfineon Technologies (Originally International Rectifier)
CategoryDiscrete Semiconductor Products > Transistors – FETs, MOSFETs – Single
DescriptionHigh-power StrongIRFET™ N-Channel Power MOSFET with 300V Vds rating, 70A continuous drain current and ultra-low on-resistance. Packaged in TO-247AC for high-performance industrial switching power equipment.
Stock StatusIn Stock
OriginOriginal Factory Authentic Stock

Product Overview

The IRFP4868PBF is an industrial-grade high-performance N-channel enhancement power MOSFET built on Infineon’s robust StrongIRFET™ process platform. Designed for high-voltage power topologies with superior power density and long-term reliability, this device features a 300V drain-source breakdown voltage and a maximum continuous drain current of 70A. Its core design minimizes static Rds(on) conduction loss to reduce heat generation under sustained heavy load operation. The device integrates reinforced gate oxide protection, high repetitive avalanche energy tolerance, and an integrated fast-recovery body diode with low reverse recovery charge Qrr to suppress inductive switching voltage spikes. Packaged in thermally optimized standard TO-247AC through-hole housing, it serves as a reliable power switch for SMPS, motor inverters, UPS, high-voltage DC-DC converters and industrial automation power stages.

Core Advantages

Optimized High-Voltage Performance Matrix

The 300V rated breakdown voltage matches high continuous current capacity, providing sufficient voltage margin for high-voltage DC bus circuits and heavy industrial switching systems.

Ultra-Low Conduction Loss (Rds(on))

This 300V-class MOSFET achieves very low drain-source on-resistance, cutting I²R power loss and improving overall conversion efficiency under full thermal load conditions.

Advanced StrongIRFET™ Structural Ruggedness

Fully tested for repetitive avalanche energy (Eas) and high dv/dt transient immunity, greatly improving system stability against line surges and inductive kickback voltage pulses.

High-Efficiency TO-247AC Thermal Transfer

The 3-pin through-hole package delivers low junction-to-case thermal resistance RθJC, supporting easy mechanical mounting to large heat sinks or forced-cooling radiators.

Key Specifications

BrandInfineon Technologies / International Rectifier
RoHS StatusRoHS Compliant / Lead-Free (PBF) Matte Tin Plated Terminals
EDA/CAD Model3D Model & PCB Footprint Available upon request
Warranty1-Year Standard Factory Warranty
Package / CaseTO-247AC
Mounting TypeThrough-Hole Technology (THT)
Surface Marking / SilkscreenIRFP4868 Marking
FET Configuration TypeN-Channel Enhancement Mode Power MOSFET
Drain-to-Source Voltage (VDS)300 V Absolute Maximum Rating
Continuous Drain Current (ID)70 A @ TC = 25°C / 49 A @ TC = 100°C
Pulsed Drain Current (IDM)280 A Peak Pulse Drain Current
Max Drain-Source On-Resistance (RDS(on))32 mΩ Max @ VGS = 10V
Gate-to-Source Voltage (VGS)±20 V Absolute Maximum Gate Voltage
Gate Threshold Voltage (VGS(th))2.0 V ~ 4.0 V Typical Threshold (Typ 3.0 V)
Total Gate Charge (Qg)190 nC Typical (VGS = 10V, VDS = 150V)
Input Capacitance (Ciss)10770 pF Typical @ VDS = 50V
Output Capacitance (Coss)1450 pF Typical @ VDS = 50V
Reverse Transfer Capacitance (Crss)310 pF Typical @ VDS = 50V
Reverse Recovery Charge (Qrr)380 nC Typical Body Diode Recovery Charge
Reverse Recovery Time (trr)45 ns Typical Body Diode Recovery Time
Maximum Power Dissipation (PD)517 W @ TC = 25°C with proper heatsink cooling
Power Derating Factor3.4 W/°C Linear Thermal Derating
Junction-to-Case Thermal Resistance (RθJC)0.24 °C/W
Junction-to-Ambient Thermal Resistance (RθJA)0.75 °C/W
Operating Junction Temperature Range-55°C ~ +175°C Wide operating junction temperature range
Storage Temperature Range (TSTG)-65°C ~ +175°C

Typical Applications

  • High-Efficiency Switch-Mode Power Supplies (SMPS) and distributed power supply systems
  • UPS inverter bridges and grid-connected solar power converters
  • Industrial AC/DC motor drivers, BLDC motor controllers and linear actuator drive modules
  • High-voltage battery management systems, low-voltage EV power units and high-voltage disconnect switches
  • High-power DC-DC converters, active clamp circuits, resonant converters and induction heating power stages

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Shipping TimeShip out within 1-2 business days after payment confirmed
Delivery Time3-7 working days for global shipments
Shipping MethodsDHL, UPS, FedEx, EMS
Payment MethodsT/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

Send us an inquiry for official datasheets, free samples, bulk stock availability and volume discount quotations. We will reply to all messages within 24 hours.

Frequently Asked Questions

Q1: Are the IRFP4868PBF transistors in your stock 100% genuine original parts?

A: All IRFP4868PBF in our inventory are brand new, factory-original components manufactured by Infineon. All batches are stored and shipped in ESD anti-static packaging under constant temperature warehouse conditions.

Q2: What performance advantages do StrongIRFET™ devices like IRFP4868PBF have over older MOSFET generations?

A: StrongIRFET™ series features optimized vertical cell design that delivers lower Rds(on) and stronger gate oxide durability. It withstands larger surge current and repetitive industrial switching transient stress for longer service life.

Q3: What does the PBF suffix on IRFP4868PBF stand for?

A: PBF stands for Pb-Free lead-free construction. The component pins use matte tin plating without lead content, fully compliant with global RoHS environmental standards for electronic assembly production lines.

Q4: How can our engineering team get 3D STEP models, thermal simulation data or bulk preferential pricing?

A: Fill out the inquiry form on this page and describe your project requirements. Our technical sales team will send all available CAD documents and customized volume pricing within 24 hours.

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