Share to:

IRFR3709ZTRPBF

Add to quote

IRFR3709ZTRPBF

Part NumberIRFR3709ZTRPBF
ManufacturerInfineon Technologies (Originally International Rectifier)
CategoryDiscrete Semiconductor Products > Transistors – FETs, MOSFETs – Single
DescriptionHigh-performance, low-gate-charge HEXFET N-Channel Power MOSFET featuring a 30V breakdown voltage, 86A continuous drain current, and ultra-low on-resistance, housed in TO-252 package optimized for high-frequency synchronous buck converters.
Stock StatusIn Stock
OriginOriginal Factory Authentic Stock

Product Overview

The IRFR3709ZTRPBF is Infineon’s trench-process N-channel HEXFET power MOSFET for high-current synchronous buck DC-DC converters. Rated for 30V VDS and 86A continuous drain current at 25°C, it delivers ultra-low Rds(on) and minimal gate charge to cut conduction & switching losses. Built with stable parallel operation capability, fast-recovery body diode and high avalanche ruggedness, this tape-and-reel TO-252 D-Pak SMT power switch fits CPU VRMs, telecom power modules and high-density embedded power supplies.

Core Advantages

Ultra-Low Figure of Merit (FOM)

Optimized RDS(on)×Qgfigure of merit minimizes static loss and supports fast high-frequency switching without extra thermal load.

Advanced Synchronous Buck Optimization

Low Qgd/Qgsratio suppresses parasitic false turn-on under high dv/dt transients, fully compatible with synchronous rectifier power topologies.

Excellent Thermal Performance in SMT Package

Compact D-Pak package with low junction-to-case thermal resistance; PCB copper plane serves as efficient heat sink for slim, high-density board layouts.

Automated Assembly Ready (Tape and Reel)

TR suffix denotes standard embossed carrier tape packaging, perfectly matching high-speed SMT pick-and-place assembly equipment for large-batch manufacturing.

Key Specifications

BrandInfineon Technologies / International Rectifier
RoHS StatusRoHS Compliant / Lead-Free (PBF) Matte Tin Plated Leads
EDA/CAD Model3D Model & PCB Footprint Available upon request
Warranty1-Year Standard Factory Warranty
Package / CaseTO-252-3
Mounting TypeSurface Mount Technology (SMD/SMT)
Surface Marking / SilkscreenFR3709Z Marking
FET Configuration TypeN-Channel MOSFET (Enhancement Mode)
Drain-to-Source Voltage (VDS)30 V Absolute Maximum Rating
Continuous Drain Current (ID)86 A (at TC = 25°C, Package Limited) / 61 A (at TC = 100°C)
Pulsed Drain Current (IDM)340 A Peak Pulse Drain Current
Max Drain-Source On-Resistance (RDS(on))6.5 mΩ Maximum at VGS = 10V / 8.0 mΩ Maximum at VGS = 4.5V
Gate-to-Source Voltage (VGS)±20 V Absolute Maximum Gate Voltage
Gate-to-Source Threshold Voltage (VGS(th))1.0 V ~ 1.8 V Typical Turn-On Threshold Range
Total Gate Charge (Qg)17 nC Typical / 26 nC Maximum (at VGS = 4.5V, VDS = 15V)
Input Capacitance (Ciss)2330 pF Typical @ VDS = 15V
Output Capacitance (Coss)330 pF Typical @ VDS = 15V
Reverse Transfer Capacitance (Crss)120 pF Typical @ VDS = 15V
Reverse Recovery Charge (Qrr)25 nC Typical Body Diode Recovery Charge
Reverse Recovery Time (trr)18 ns Typical Body Diode Recovery Time
Maximum Power Dissipation (PD)79 W (at TC = 25°C with optimal thermal pad layout)
Power Derating Factor0.53 W/°C Linear Thermal Derating Slope
Junction-to-Case Thermal Resistance (RθJC)1.9 °C/W
Junction-to-Ambient Thermal Resistance (RθJA)50 °C/W
Operating Junction Temperature Range-55°C to +175°C wide industrial operating junction temperature range
Storage Temperature Range (TSTG)-65°C ~ +175°C

Typical Applications

  • High-Frequency Synchronous Buck DC-to-DC Converters for Server and Desktop CPU Core VRMs
  • High-Density Distributed Power Architecture Modules in Network Switched Routers and Cellular Base Stations
  • Point-of-Load (POL) Power Regulators, Graphics Card Power Subsystems, and Gaming Consoles
  • Notebook and Portable Embedded Computing Power Management Circuits
  • Low-Power Motor Controllers, Fast-Switching Electronic Load Disconnects, and Smart Solid-State Switches

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Shipping TimeShipped within 1-2 business days
Delivery Time3-7 working days worldwide
Shipping MethodsDHL, UPS, FedEx, EMS
Payment MethodsT/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.

Frequently Asked Questions

Q1: Is your currently available stock of the IRFR3709ZTRPBF power MOSFET 100% genuine and original?

A: Yes, we guarantee that all IRFR3709ZTRPBF components in our warehouse are 100% brand-new, factory-original products directly from Infineon Technologies. Every batch is logged, held under strict climate-regulated conditions, and shipped within anti-static ESD shielding carriers.

Q2: What do the specific characters “Z”, “TR”, and “PBF” denote inside this product’s marking suffix?

A: The “Z” denotes that this chip represents an optimized, ultra-low on-resistance cell structure featuring lower gate charges over legacy lines. The “TR” designation confirms that the product is shipped in standard Tape and Reel format for auto-insertion machinery, and the “PBF” suffix verifies a completely lead-free, RoHS-compliant build.

Q3: Can this component be driven efficiently using logic-level gate driver outputs like 5V or 4.5V lines?

A: Yes, the IRFR3709ZTRPBF is a logic-level optimized power MOSFET. It is fully specified and tested to perform with excellent efficiency at a low gate drive of 4.5V, maintaining a highly restrictive maximum on-resistance of just 8.0 mΩ.

Q4: How can our technical division request mechanical CAD step models, simulation profiles, or ask for bulk special pricing schedules?

A: Please complete our Quick Inquiry web form on this page with details about your processing parameters. Our application support desk will process your inquiry and dispatch the available technical documentation package within 24 hours.

[next_prev_pages]
Related Products
Scroll to Top