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MRF101AN

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MRF101AN

Part NumberMRF101AN
ManufacturerNXP Semiconductors
CategoryDiscrete Semiconductor Products > Transistors – FETs, MOSFETs – RF
Description100W HF/VHF N-Channel Enhancement Mode Lateral MOSFET (LDMOS) RF Power Transistor, 50V, TO-220-3 Package.
Stock StatusIn Stock
OriginOriginal Factory

Product Overview

MRF101AN is NXP rugged LDMOS RF power transistor. It outputs 100W CW power up to 250MHz under 50V supply, with built-in ESD protection to withstand 65:1 VSWR mismatch. TO-220 through-hole package simplifies heat dissipation, suitable for ISM, broadcast, radio and industrial RF equipment.

Core Advantages

Extreme Ruggedness and VSWR Protection

Supports over 65:1 VSWR full-power operation without extra isolation circuits.

High Gain and Efficiency

20~26dB power gain, drain efficiency up to 75%, lowers drive power and cooling cost.

Standard Plastic TO-220 Package

Source-connected tab for direct heatsink mounting, reduces assembly cost vs ceramic packaging.

Wide Frequency Coverage

Covers 1.8MHz~250MHz HF/VHF band for multi-scene RF amplifier design.

Key Specifications

BrandNXP Semiconductors RF Power Series
RoHS StatusRoHS Compliant / Lead-Free / Halogen-Free
EDA/CAD ModelSchematic symbols, PCB footprint libraries, and thermal simulation files available upon request
Warranty1-Year Standard Quality Warranty
Package / CaseTO-220-3 (TO-220AB)
Mounting TypeThrough-Hole
Surface Marking / SilkscreenMRF101AN Marking
Frequency Range1.8 MHz to 250 MHz (HF to VHF Bands)
Output Power100W CW (Continuous Wave) / Pulse
Operating Drain Voltage50V DC Nominal (Support range up to 50V)
Typical Power Gain20.0 dB to 26.0 dB (depending on frequency and tuning circuit)
Drain EfficiencyUp to 75% at rated power (Typical)
Drain-Source Voltage133V DC Maximum Limit
Gate-Source Voltage-6V to +10V DC Maximum Limit
Thermal Resistance0.95 °C/W (Excellent heat dissipation to baseplate)
Operating Temperature Range-40℃ ~ +150℃ Junction Temperature (Industrial Grade)
Input ImpedanceLow internal input impedance for easy matching
Dissipation Power (Pd)115W Maximum Power Dissipation
Threshold Voltage (Vgs(th))Typical 2.2V Gate Threshold Voltage
Channel TypeN-Channel Enhancement Mode LDMOS
SeriesRF LDMOS Power Transistor Series

Typical Applications

  • Industrial, Scientific, and Medical (ISM) RF Generators (laser excitation, plasma generators, RF heating)
  • FM Broadcast Transmitters and VHF Digital TV/Radio Translators
  • HF/VHF Amateur Radio Power Amplifiers (Linear Amplifiers)
  • Land Mobile Radio (LMR) Base Station Transmitters
  • RF Test and Measurement Laboratory Amplifiers

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Shipping TimeShipped within 1-2 business days
Delivery Time3-7 working days worldwide
Shipping MethodsDHL, UPS, FedEx, EMS
Payment MethodsT/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

Submit inquiry for datasheets, samples, bulk quotation and stock check. We reply within 24 hours.

Frequently Asked Questions

Q1: Difference between MRF101AN and MRF101BN?

A: Pinout mirror design. MRF101AN:1=Gate,2=Source,3=Drain; BN swaps Gate/Drain pins, convenient for push-pull amplifier layout.

Q2: Why tab connects to source pin?

A: Shortest RF ground path and lowest thermal resistance, no isolation pad needed for heat sink.

Q3: How does built-in ESD protection work?

A: On-chip bidirectional diodes on gate-source block static surge, avoid gate breakdown during assembly & operation.

Q4: Can it cover full HF-VHF wideband?

A: Yes. Narrow band tuning gets max efficiency; transmission line transformers support 1.8~250MHz broadband circuits.

Q5: Is this transistor industrial temperature rated?

A: Yes, junction temp range -40℃~150℃, fits industrial outdoor & high-power continuous working devices.

Q6: Do you supply genuine original NXP MRF101AN?

A: All stock are factory original NXP components, with batch trace code and full quality warranty.

Q7: What heatsink size is recommended for 100W full power?

A: Need heatsink thermal resistance ≤0.5℃/W with forced air cooling for continuous 100W CW output.

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