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RD02MUS1B

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RD02MUS1B

Part NumberRD02MUS1B
ManufacturerMitsubishi Electric
CategoryDiscrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs
DescriptionN-Channel Enhancement Mode Silicon LDMOS RF Power MOSFET, 7.2V Low Voltage Operation, VHF/UHF Band (175MHz / 520MHz), 2W Output Power, LLCC/SLP Surface Mount Package.
Stock StatusIn Stock
OriginOriginal Factory

Product Overview

The RD02MUS1B is Mitsubishi Electric N-channel LDMOS RF transistor for portable VHF/UHF wireless communication devices. Operating at nominal 7.2V, it delivers 2W RF output power at 175MHz and 520MHz with power gain above 16dB. Compared with RD02MUS1, it adopts upgraded structure for improved surge resistance. Housed in LLCC/SLP 3-lead surface-mount package, widely used as driver and final amplifier for handheld radios.

Core Advantages

7.2V Low Voltage Design

Suitable for lithium battery-powered portable transceivers without additional boost circuit. Operating voltage range:7.2V~9.2V.

High Gain & Excellent Efficiency

Typical power gain>16dB and drain efficiency up to 65% @520MHz, delivering stable performance for VHF/UHF radio systems.

Strong Load Mismatch Endurance

Capable of withstanding 20:1 full-phase VSWR, enhancing equipment stability under complex antenna conditions.

LLCC/SLP Compact RF Package

3-lead dedicated RF surface-mount housing, ideal for compact high-density PCB layout.

Key Specifications

BrandMitsubishi Electric
RoHS StatusRoHS Compliant / Lead-Free / Green
EDA/CADSymbol, Footprint & 3D Model Available
Warranty1-Year Standard Quality Warranty
Package / CaseLLCC/SLP Surface Mount Package, 3 Leads
Mounting TypeSurface Mount Device (SMD/SMT)
Surface Marking / SilkscreenRD02MUS1B Marking
Transistor TechnologyN-Channel Enhancement Mode Silicon LDMOS
Frequency RangeVHF / UHF Band (175 MHz / 520 MHz)
Output Power (Pout)Typ. 2.0 W (VDD = 7.2V, f = 520MHz, Pin = 0.1W)
Operating Drain Voltage (VDD)7.2 V DC (Nominal), Max Vdss:30V
Recommended Voltage Range7.2V ~ 9.2V DC
Drain EfficiencyTyp. 65% or higher at 520 MHz
Power GainTyp. >16 dB at 520 MHz
Threshold Voltage(Vth)Typ.1.8V
Static Drain Current(Idq)200mA
Maximum Dissipation Power(Pch)21.9W
VSWR Withstand Capability20:1 Full Phase
Operating Channel Temperature-40°C to +150°C
Packaging FormatTape & Reel / Anti-Static Tray Packaging

Typical Applications

  • Handheld Land Mobile Radio (LMR) transceivers and VHF/UHF two-way walkie-talkies
  • Driver stage & final power amplifier for portable communication radio
  • Sub-GHz ISM band wireless telemetry, remote control transmitter module
  • Low power RF signal amplification equipment

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Shipping TimeShipped within 1-2 business days
Delivery Time3-7 working days worldwide
Shipping MethodsDHL, UPS, FedEx, EMS
Payment MethodsT/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.

Frequently Asked Questions

Q1: What is the difference between RD02MUS1B and RD02MUS1?

A1: Electrical specifications are consistent. RD02MUS1B features optimized structure for stronger surge resistance. Notice the package difference: RD02MUS1 uses SOT-89, while RD02MUS1B adopts LLCC/SLP. They cannot be directly interchanged without PCB modification.

Q2: Can RD02MUS1B work on both 175MHz and 520MHz?

A2: Yes. It outputs typical 2W power at 7.2V supply under 175MHz and 520MHz, suitable for VHF & UHF dual-band radio designs.

Q3: Are there compatible Mitsubishi alternative RF transistors?

A3: Choose RD07MUS2B for higher output power; select RD01MUS1 for low-power driver circuits. Confirm power, frequency and package before replacement.

Q4: What maximum VSWR can RD02MUS1B tolerate?

A4: It withstands 20:1 full-phase VSWR without permanent damage, improving reliability when antennas mismatch in field use.

Q5: What is the recommended operating voltage range?

A5: Nominal voltage 7.2V, operating range 7.2V ~ 9.2V. Do not exceed absolute maximum Vdss 30V.

Q6: Does RD02MUS1B require dedicated thermal design?

A6: Yes. Connect the ground pin to large copper area on PCB for heat dissipation to control junction temperature safely during continuous transmission.

Q7: What should be noticed for LLCC/SLP package soldering?

A7: This 3-lead flat RF package requires precise temperature control during soldering. Avoid prolonged high temperature to prevent device performance degradation.

Q8: Can this transistor be used for continuous long-time transmission?

A8: It supports continuous operation within rated parameters. Sufficient heat dissipation must be guaranteed for long-term CW working mode.

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