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SI4435DDY-T1-GE3

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SI4435DDY-T1-GE3

Part NumberSI4435DDY-T1-GE3
ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products > Transistors – FETs, MOSFETs – Single
DescriptionTrenchFET® Power MOSFET, P-Channel, featuring -30V breakdown voltage, -11.4A continuous drain current, and low on-resistance in standard LITTLE FOOT® SO-8 package, optimized for high-side adapter switches and portable load controls.
Stock StatusIn Stock
OriginOriginal Factory

Product Overview

The SI4435DDY-T1-GE3 is Vishay Siliconix’s high-performance P-channel enhancement power MOSFET adopting proprietary TrenchFET® tech. Its ultra-low RDS(on) reduces conduction loss, rated at -30V VDS and -11.4A continuous drain current for simple high-side switching without extra charge pumps. Optimized gate charge balances fast switching and low driver loss. Packaged in compact LITTLE FOOT® SO-8 tape & reel format, it serves as space-saving power switching core for notebooks, power adapters, lithium battery packs and portable electronics.

Core Advantages

Proprietary TrenchFET® Silicon Architecture

Utilizes ultra-high cell density layout chemistry to compress the internal on-resistance per area unit, leading to highly minimized conduction losses under sustained load demands.

Simplified High-Side Control Driving

The P-Channel structural alignment permits direct voltage drive configurations directly from standard microcontrollers or power IC logic rails, bypassing the need for complex boost circuits or external charge pumps.

Exceptional Thermal Profiling in SO-8

The standardized 8-pin LITTLE FOOT® SO-8 design incorporates highly conductive lead frames to yield excellent junction-to-foot thermal resistance ($R_{\theta JF}$), maintaining consistent reliability across dense surface-mount arrays.

Advanced Eco-Friendly Halogen-Free Build

The “GE3” specification denotes strict compliance with standard global environmental directives, utilizing completely halogen-free materials and lead-free terminal contacts without sacrificing electrical ruggedness.

Key Specifications

BrandVishay Siliconix
RoHS StatusRoHS Compliant / Halogen-Free (GE3) Standard Envelope
EDA/CAD Model3D CAD Step Models & PCB Schematic Footprints available upon request
Warranty1-Year Standard Quality Warranty
Package / CaseSO-8
Mounting TypeSurface Mount Technology (SMD/SMT)
Surface Marking / Silkscreen4435D Marking
FET Configuration TypeP-Channel MOSFET (Enhancement Mode)
Drain-to-Source Voltage (VDS)-30 V Absolute Maximum Breakdown Threshold
Continuous Drain Current (ID)-11.4 A (at TC = 25°C) / -9.1 A (at TA = 70°C)
Max Drain-Source On-Resistance (RDS(on))24 mΩ Typical / 35 mΩ Maximum (at VGS = -10V) / 32 mΩ Typical (at VGS = -4.5V)
Gate-to-Source Voltage (VGS)±20 V Maximum Input Dynamic Window
Total Gate Charge (Qg)22 nC Typical / 50 nC Maximum (at VGS = -10V)
Maximum Power Dissipation (PD)2.5 W (at TA = 25°C standard PCB layout) / 5.0 W (at TC = 25°C case limited rating)
Operating Junction Temperature Range-55°C to +150°C (Industrial/Commercial Performance Temperature Class)
Input Capacitance (Ciss)1100 pF Typical (VDS = -15 V, VGS = 0 V)
Output Capacitance (Coss)230 pF Typical (VDS = -15 V, VGS = 0 V)
Reverse Transfer Capacitance (Crss)60 pF Typical (VDS = -15 V, VGS = 0 V)
Thermal Resistance Junction to Case (RθJC)30 °C/W

Typical Applications

  • High-Side Load Switches and Distributed Power Rails in Laptop / Notebook Systems
  • Adapter Management Switches and Input Charging Protection Stages in Desktop Computing
  • Battery Pack Protection Modules (BMS) and Disconnect Switches in Lithium-Ion Matrices
  • DC-to-DC Converters, Low-Profile Power Brick Inverters, and Linear Regulator Post-Stages
  • Smart Point-of-Sale (POS) Terminals, Portable Instruments, and Industrial Wearable Controllers

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Shipping TimeShipped within 1-2 business days
Delivery Time3-7 working days worldwide
Shipping MethodsDHL, UPS, FedEx, EMS
Payment MethodsT/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.

Frequently Asked Questions

Q1: Is your currently available inventory of the SI4435DDY-T1-GE3 100% genuine and original?

A: Yes, we guarantee that all SI4435DDY-T1-GE3 components in our warehouse are 100% brand-new, factory-original products directly from Vishay Siliconix. Every shipment batch goes through detailed quality logging and is delivered inside specialized anti-static ESD shielding bags.

Q2: What is the technical structural breakdown distinction between the “E3” and “GE3” suffixes in Vishay components?

A: Suffixes define the material safety rating. Devices stamped with “-E3” indicate standard lead-free (Pb-free) terminations compliant with regular RoHS directives. The modern “-GE3” suffix signifies a more comprehensive environmental standard: it guarantees that the entire body compound is fully Halogen-Free in addition to being Lead-Free.

Q3: Why should an engineer prioritize a P-Channel MOSFET over an N-Channel for high-side adapter pathways?

A: Implementing a P-Channel MOSFET significantly simplifies high-side circuit topology. To fully enhance an N-Channel MOSFET positioned on the high side, the gate voltage must be driven above the source rail voltage, requiring a dedicated charge pump circuit. A P-Channel MOSFET, conversely, can be switched fully active by pulling the gate voltage lower than the source line, decreasing component counts and saving PCB area.

Q4: How can our design department acquire official PDF datasheets, mechanical layouts, or negotiate bulk tier pricing schedules?

A: Please complete the Quick Inquiry web form located on this product presentation page. Our customer support engineers will review your operational requirements and dispatch the available technical documentation package within 24 hours.

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