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SI7615ADN-T1-GE3
SI7615ADN-T1-GE3
| Part Number | SI7615ADN-T1-GE3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Category | Discrete Semiconductor Products > Transistors – FETs, MOSFETs – Single |
| Description | TrenchFET® Gen III Power MOSFET, P-Channel, featuring -20V breakdown voltage, -35A continuous drain current, and ultra-low on-resistance in a thermally enhanced PowerPAK® 1212-8 package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The SI7615ADN-T1-GE3 is Vishay Siliconix high-performance P-channel enhancement power MOSFET built on TrenchFET® Gen III technology. Ultra-low RDS(on) cuts conduction loss under heavy loads, rated -20V VDS and -35A continuous drain current to simplify high-side switching without external charge pumps. Packaged in compact thermally enhanced 3mm×3mm PowerPAK® 1212-8 with exposed thermal pad for superior heat dissipation, it fits thin PCB layouts for load switches, battery protection, charger modules and POL DC-DC converters.
Core Advantages
TrenchFET® Gen III Silicon Technology
High cell density design delivers ultra-low on-resistance, reduces I²R heat loss and improves overall system energy efficiency.
Thermally Enhanced PowerPAK® 1212-8 Footprint
3mm×3mm small outline saves PCB space vs traditional SO-8; large exposed drain pad optimizes heat transfer to copper traces for higher current handling.
Simplified High-Side Driving Topology
P-channel design supports direct gate drive from MCU or standard PWM logic, eliminating extra boost circuits and auxiliary power rails.
Fully Green Halogen-Free Materials
The GE3 suffix confirms full RoHS compliance, halogen-free and lead-free construction without sacrificing electrical robustness.
Key Specifications
| Brand | Vishay Siliconix |
|---|---|
| RoHS Status | RoHS Compliant / Halogen-Free (GE3) Standard Envelope |
| EDA/CAD Model | 3D CAD STEP Models, Symbol Library & Schematic Footprints available upon request |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | PowerPAK® 1212-8 (3mm×3mm) |
| Mounting Type | Surface Mount Technology (SMD/SMT) |
| Surface Marking / Silkscreen | 7615A Marking |
| FET Configuration Type | P-Channel MOSFET (Enhancement Mode) |
| Drain-to-Source Voltage (VDS) | -20 V Absolute Maximum Breakdown Threshold |
| Continuous Drain Current (ID) | -35 A (at TC = 25°C, Silicon Limited) / -16.2 A (at TA = 25°C) |
| Max Drain-Source On-Resistance (RDS(on)) | 4.4 mΩ Maximum (at VGS = -10V) / 5.2 mΩ Maximum (at VGS = -2.5V) |
| Gate-to-Source Voltage (VGS) | ±12 V Maximum Input Dynamic Window |
| Total Gate Charge (Qg) | 59 nC Typical (VGS = -4.5V) / 183 nC Maximum (VGS = -10V) |
| Maximum Power Dissipation (PD) | 52 W (at TC = 25°C) / 3.7 W (at TA = 25°C with standard copper PCB layout) |
| Operating Junction Temperature Range | -55°C to +150°C (Industrial and Commercial Operating Profile) |
| Input Capacitance (Ciss) | 3900 pF Typical (VDS = -10 V, VGS = 0 V) |
| Output Capacitance (Coss) | 1300 pF Typical (VDS = -10 V, VGS = 0 V) |
| Reverse Transfer Capacitance (Crss) | 183 pF Typical (VDS = -10 V, VGS = 0 V) |
| Thermal Resistance Junction to Case (RθJC) | 1.3 °C/W |
Typical Applications
- Advanced High-Side Load Switching Networks in Ultra-Thin Laptops and Mobile Handsets
- Battery Management Systems (BMS) and Charging Path Cut-off Modules for Multi-Cell Li-Ion Packs
- Point-of-Load (POL) Modules, Buck-Boost Converters, and Compact Synchronous Rectification Subsystems
- Smart Power Distribution and Smart Meter Terminal Infrastructure Control Blocks
- Automated Power-Saving Sleep Circuit Switches in Portable Medical Equipment and Handheld IoT Devices
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: Is your currently available inventory of the SI7615ADN-T1-GE3 100% genuine and original factory stock?
A: Yes, we guarantee that all SI7615ADN-T1-GE3 components in our stock are 100% brand-new, factory-original parts directly from Vishay Siliconix. Every shipment batch undergoes structural QA scanning and is delivered in original tape and reel packaging with anti-static ESD shielding bags.
Q2: What is the main structural advantage of the PowerPAK® 1212-8 package over a traditional SO-8 package?
A: The PowerPAK® 1212-8 features a smaller 3mm×3mm footprint and thinner profile vs standard SO-8, with a large exposed metallic drain thermal pad on the bottom. This design greatly reduces junction-to-case thermal resistance, allowing the MOSFET to handle higher continuous current without overheating.
Q3: Why is the continuous current capacity listed as -35A for case temperature but lower for ambient temperature?
A: -35A rating is theoretical maximum based on silicon die limit when case temperature TC is fixed at 25°C with unlimited heat sinking. The -16.2A ambient rating reflects real-world performance on standard FR4 PCB with regular copper traces, the baseline value engineers should use for circuit design.
Q4: How can our technical engineering group request official datasheets, reference footprint templates, or high-volume wholesale pricing tiers?
A: Please fill out the Quick Inquiry web form on this page with your project details. Our application engineering desk will process your requirements and reply with the complete technical data pack and a commercial quote within 24 hours.
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