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SRF8S18352WGHSR6
SRF8S18352WGHSR6
| Part Number | SRF8S18352WGHSR6 |
|---|---|
| Manufacturer | NXP Semiconductors / Former Freescale |
| Category | Discrete Semiconductor Products > Transistors > BJT RF Power Transistors |
| Description | SRF8S18352WGHSR6 is SRF8S series silicon BJT RF power transistor, optimized for 80MHz~500MHz HF/VHF industrial RF heating, medical radio frequency and signal amplification equipment. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
SRF8S18352WGHSR6 is SRF8S series silicon bipolar RF power transistor manufactured by NXP Semiconductors (Former Freescale). Optimized for 80MHz~500MHz HF/VHF band, it adopts gull-wing surface-mount ceramic package with exposed thermal pad for excellent heat dissipation. Typical output power reaches 18W~35W for industrial RF heating, medical RF equipment and RF signal systems. No official public datasheet available; all parameters are series reference only.
Core Advantages
Broad HF/VHF Working Band
Stable performance at 80MHz~500MHz, suitable for various industrial medium & low frequency RF amplification projects.
Optimized SMD Ceramic Packaging
Gull-wing pins improve vibration resistance. Exposed thermal pad reduces thermal resistance for continuous high-power operation.
Reliable BJT Design
Great load mismatch tolerance, stable operation under 28V~35V industrial working voltage.
Convenient Mass Production
Supports tape & reel packaging, compatible with automatic SMT production lines.
Key Specifications
| Brand | NXP Semiconductors / Former Freescale |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | Gull-Wing Leaded Surface Mount Ceramic Package with Exposed Pad |
| Mounting Type | Surface Mount Device (SMD/SMT) |
| Surface Marking / Silkscreen | SRF8S18352WGHS Marking |
| Transistor Technology | BJT RF Power Transistor (SRF8S Series) |
| Power Dissipation (Pd) | Maximum total power dissipation: 70W |
| Frequency Range | 80 MHz ~ 500 MHz (HF/VHF Band, partial versions support UHF) |
| Collector-Emitter Voltage (VCEO) | Min 50V, typical operating voltage: 28V ~ 35V DC |
| Typical Output Power | 18W ~ 35W (Series reference parameter) |
| Thermal Resistance (Rth) | Low thermal resistance supported by exposed metal thermal pad |
| Operating Junction Temperature | -40°C to +150°C, Absolute Maximum Junction Temperature: +220°C |
| Storage Temperature Range | -55°C ~ +165°C |
| Packaging Format | Tape & Reel (R6 Suffix) / Tray |
Typical Applications
- Industrial RF heating power amplification modules
- Medical RF therapy and radio frequency equipment
- HF/VHF RF signal generator and signal source
- Short-distance industrial wireless transmission equipment
- General medium frequency RF power amplifier circuit
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For sample requests, bulk quotation and parameter confirmation, please submit inquiry. We will reply within 24 working hours.
Frequently Asked Questions
Q1: Is SRF8S18352WGHSR6 an LDMOS transistor for cellular base stations?
A1: No. It is a BJT bipolar RF transistor operating at 80MHz~500MHz HF/VHF band. It is not designed for 1.8GHz DCS/LTE cellular base station equipment.
Q2: What do suffix GHS and R6 stand for on SRF8S18352WGHSR6?
A2: GHS means gull-wing lead surface mount ceramic package with exposed thermal pad. R6 refers to tape & reel packaging for automatic SMT assembly.
Q3: Are cross-brand alternative transistors available to replace SRF8S18352WGHSR6?
A3: Alternatives include other SRF8S series models and HF/VHF BJT devices from STMicroelectronics, Mitsubishi. Note: Pinout, impedance and power parameters differ. Circuit matching and re-tuning are required before replacement.
Q4: Can SRF8S18352WGHSR6 run continuously at full output power?
A4: Yes. A qualified heatsink is mandatory. The exposed thermal pad needs reliable contact with the cooling plane to keep junction temperature below 150°C.
Q5: Why is there no official public datasheet for SRF8S18352WGHSR6?
A5: The complete extended part number is customized batch coding. All parameters are summarized from SRF8S series characteristics for preliminary selection only. Contact distributors for official test data for formal product design.
Q6: What voltage range is recommended for practical circuit design?
A6: Maximum VCEO reaches 50V. The recommended stable operating voltage is 28V~35V DC. Avoid long-term operation above 40V.
Q7: What is the difference between SRF8S18352WGHSR6 and other SRF8S series models?
A7: The number segment 18352 indicates different power grades. Sub-models vary in saturated output power and gain. Direct replacement without performance testing is not recommended.
Q8: Can this transistor be used for VHF amateur radio transmitters?
A8: It works for VHF amateur radio within 80~500MHz. You need to redesign input and output matching networks based on actual test parameters.
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