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BLF7G24LS-100,112
BLF7G24LS-100,112
| Part Number | BLF7G24LS-100,112 |
|---|---|
| Manufacturer | Ampleon / NXP Semiconductors |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs |
| Description | BLF7G24LS-100,112 RF LDMOS Transistor, 2300–2400 MHz, 28V, 100W, Flangeless Ceramic SOT502B Package |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The BLF7G24LS-100,112 is a 100W Gen7 LDMOS RF transistor from Ampleon (formerly NXP). Optimized for 2300–2400 MHz wireless infrastructure with 28V operating voltage. It integrates internal input matching to simplify PCB design, delivers high efficiency and linearity, and sustains VSWR 10:1 load mismatch. Housed in flangeless ceramic SOT502B package, suitable for LTE base station & Doherty amplifier solutions.
Core Advantages
100W RF Power Output for 2.3–2.4GHz Band
Stable 100W saturated power at 28V, ideal for 2.3GHz LTE cellular infrastructure.
7th Generation LDMOS Technology
Optimized efficiency and linearity, excellent performance for high PAPR modulation signals.
Built-in Input Impedance Matching
Reduces peripheral components, shortens RF circuit development cycles.
High Ruggedness & Reliable Package
Flangeless ceramic air-cavity SOT502B package, tolerates full-phase VSWR 10:1 mismatch.
Key Specifications
| Brand | Ampleon / NXP Semiconductors |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | SOT502B (Flangeless Ceramic Air-Cavity Package) |
| Mounting Type | Chassis Mount / Flange Mount |
| Surface Marking / Silkscreen | BLF7G24LS-100 Marking |
| Transistor Technology | LDMOS (Lateral Diffused Metal Oxide Semiconductor Gen7, N-channel Enhancement Mode) |
| Frequency Band | 2300 MHz to 2400 MHz (2.3GHz – 2.4GHz) |
| Output Power (P1dB) | 100 W (Typical at 28V) |
| Linear Average Output Power | 20 W (Vds=28V, Idq=900mA, Class-AB) |
| Power Gain (Gp) | 18 dB (Typical at 2350MHz) |
| Drain Efficiency | 27% typical (2-carrier W-CDMA); >45% typical for Doherty architecture |
| Operating Drain Voltage (VDS) | 28 V (Nominal) |
| Drain-Source Voltage (Absolute Max) | 65 V |
| Continuous Drain Current | 28 A |
| Load Mismatch Ruggedness | VSWR = 10:1 through all phases |
| Thermal Resistance (Junction to Case) | 0.3 K/W (Pout=100W) |
| Operating Junction Temperature | Up to +225°C (Recommended continuous operation ≤200°C) |
| Storage Temperature Range | -65°C ~ +150°C |
| Pin Definition | Pin 1 Drain, Pin 2 Gate, Pin 3 Source |
| Internal Feature | Internal Input Matching, Integrated ESD Protection |
| Packaging Format | Tray / Tube (,112 packing code) |
Typical Applications
- 2.3GHz LTE and 4G/5G mid-band cellular base station power amplifiers
- High-efficiency Doherty power amplifiers for wireless infrastructure
- WiMAX base stations and broadband wireless access (BWA) transmission systems
- Macro-cell and micro-cell wireless infrastructure final stage transmitters
- Commercial and industrial RF power amplification systems operating in the 2300MHz to 2400MHz frequency range
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What does the “,112” suffix stand for in BLF7G24LS-100,112?
A: It is packaging code, representing tube/tray form for ceramic packaged RF transistors.
Q2: What frequency band is BLF7G24LS-100,112 designed for?
A: Optimized for 2300 MHz ~ 2400 MHz, widely used on 2.3GHz LTE & WiMAX base station equipment.
Q3: Does BLF7G24LS-100,112 include full internal matching?
A: Only input matching integrated. Output matching circuit must be designed externally.
Q4: How to mount SOT502B package for reliable thermal performance?
A: Mount the base firmly onto flat heatsink with thermal interface material to minimize thermal resistance.
Q5: What is the operating voltage of BLF7G24LS-100,112?
A: Nominal drain operating voltage is 28V DC.
Q6: What is the output power rating of this transistor?
A: Typical saturated P1dB power reaches 100W @ 2300–2400MHz.
Q7: Are there alternative / compatible replacement models?
A: BLF7G24LS-100 (without suffix ,112) is electrically identical. Check package form factor before direct replacement.
Q8: How rugged is this LDMOS device against load mismatch?
A: Can withstand full-phase VSWR up to 10:1 without device damage.
Q9: What is the difference between SOT502A and SOT502B package?
A: SOT502B (this model) is flangeless version; SOT502A has mounting tab. Not pin-to-pin mechanically interchangeable.
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