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EMM5068VU

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EMM5068VU

Part NumberEMM5068VU
ManufacturerSumitomo Electric Device Innovation (SEDI) / Eudyna
CategoryDiscrete Semiconductor Products / RF & Microwave Components > RF Amplifier ICs
DescriptionHigh‑Power X‑Band MMIC Power Amplifier Module, 9.5 GHz to 13.3 GHz Frequency Range, VU Hermetic Surface Mount Package.
Stock StatusIn Stock
OriginOriginal Factory

Product Overview

The EMM5068VU is a high‑performance X‑Band GaAs pHEMT MMIC power‑amplifier module from Sumitomo Eudyna. Operating 9.5‑13.3 GHz for X‑band radar and microwave radio systems. Three‑stage amplifier with built‑in 50‑Ohm I/O matching, delivers +33dBm output power and high gain within compact hermetic VU surface‑mount housing for automated SMT mass assembly.

Core Advantages

Optimized X‑Band Performance

Tuned for 9.5‑13.3 GHz X‑band frequency range, provides stable high output power and high gain for radar and microwave transmitter hardware.

Integrated 50‑Ohm Input & Output Matching

Internal 50‑Ω RF matching networks on both ports, eliminates external matching components and simplifies PCB layout design.

High Efficiency & Linearity

Advanced GaAs pHEMT three‑stage process, high power‑added efficiency with low IM3 intermodulation distortion for multi‑tone signal operation.

Hermetic VU Surface‑mount Module

Hermetic metal‑ceramic VU package, excellent thermal performance, suitable for high‑reliability automated SMT volume production.

Key Specifications

BrandSumitomo Electric / Eudyna
RoHS StatusRoHS Compliant / Lead‑Free
EDA / CADPCB Footprint & 3D Model Available upon Request
Warranty1‑Year Standard Quality Warranty
Package / CaseVU Hermetic Surface Mount Module Package
Mounting TypeSurface Mount Device (SMD/SMT)
Surface Marking / Silkscreen5068
Operating Frequency Range9.5 GHz to 13.3 GHz (X‑Band)
Output Power (P1dB)+33 dBm / ~2.0 W (Typical)
Small Signal Gain> 20 dB (Typical 26‑28 dB)
Input/Output Impedance50 Ω Internal Matched
Power‑Added Efficiency (PAE)Typ 32%
IM3 Intermodulation‑25 dBc Typical
Drain Supply Voltage (VDD)6 V (Nominal Recommended)
Gate Supply Voltage (VGG)‑5 V to 0 V (Adjustable Negative Bias)
Drain Quiescent Current(Iddq)Typ 1300 mA
Maximum Drain‑Source Voltage10 V
Operating Case Temperature‑40°C to +85°C
Storage Temperature‑55°C ~ +125°C

Typical Applications

  • X‑Band Pulse & CW Radar Transmitter Modules
  • X‑Band Point‑to‑Point Microwave Communication Radios
  • High‑reliability Microwave RF transmit equipment
  • Aerospace & defence RF subsystem
  • High‑frequency Microwave Test & Measurement Instruments

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Shipping TimeShipped within 1‑2 business days
Delivery Time3‑7 working days worldwide
Shipping MethodsDHL, UPS, FedEx, EMS
Payment MethodsT/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.

Frequently Asked Questions

Q1: What operating frequency range is supported by the EMM5068VU?

A: It works at 9.5‑13.3 GHz X‑band, designed for radar and X‑band microwave radio. It is NOT a Ku‑band SATCOM uplink amplifier.

Q2: Does EMM5068VU need external 50‑ohm matching networks?

A: No. Input and output ports are internally 50Ω matched, no extra matching circuits required, simplifies PCB design.

Q3: What process technology does EMM5068VU adopt?

A: Sumitomo Eudyna GaAs pHEMT three‑stage process, optimized for X‑band high‑power applications.

Q4: What is the difference between EMM5068VU and EMM5068VUT?

A: Electrical performance and pinout are 100% identical.‑T suffix = tape‑and‑reel for mass SMT; VU is tray packing. Pin‑to‑pin direct compatible.

Q5: What does the VU package suffix mean?

A: VU refers to Eudyna’s hermetic metal‑ceramic SMT module, hermetically sealed for high‑reliability working conditions.

Q6: Can I use other RF amplifiers as drop‑in replacement?

A: Substitutes must match frequency band, output power, bias voltage and package. Ku‑band amplifiers cannot replace this X‑band device. Always verify datasheet before replacement.

Q7: What is the correct power‑up sequence for this part?

A: Apply gate negative bias VGG first, then drain supply VDD. Reverse sequence may cause permanent device damage.

Q8: Where can I get datasheet, S‑parameter and bulk quotation?

A: Submit quick inquiry form to obtain datasheet, S‑parameter file, stock status and volume pricing.

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