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HTN7G09S060P
HTN7G09S060P
| Part Number | HTN7G09S060P |
|---|---|
| Manufacturer | WATECH (Huatai Electronics) |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs |
| Description | 60W LDMOS RF Power Transistor, 700MHz-960MHz Frequency Band, 48V Operation, TO-270-2 Flanged Surface Mount Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The HTN7G09S060P is a high-power LDMOS RF transistor from WATECH for 700MHz–960MHz RF power amplification. It delivers 60W typical P1dB output power (47.8dBm) with 21~22.1dB gain at 48V supply, supporting CW and pulsed operation. Widely used in GSM, WCDMA and LTE base station transmitters. Packaged in TO-270-2 flanged SMT housing with excellent heat dissipation. This device has no internal RF matching and requires external input & output matching networks.
Core Advantages
60W Power Output for 700–960MHz Band
60W typical P1dB power at 48V, ideal for 900MHz cellular communication infrastructure.
Stable Gain & Reliable Efficiency
21~22.1dB linear gain, PAE 19%~20.7%, suitable for multi-carrier digital communication systems.
TO-270-2 Flanged Package
Optimized flange structure for heat dissipation, stable under long-term continuous CW operation.
Strong VSWR Ruggedness
High tolerance to antenna load mismatch, reducing device failure risks in field applications.
Key Specifications
| Brand | WATECH |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | TO-270-2 Flanged |
| Mounting Type | Surface Mount Device (SMD/SMT) |
| Surface Marking / Silkscreen | HTN7G09S060P Marking |
| Transistor Technology | LDMOS (Lateral Diffused Metal Oxide Semiconductor) |
| Frequency Band | 700 MHz ~ 960 MHz |
| Output Power (P₁dB) | 60 W (Typical at 48V, 47.8dBm) |
| Power Gain (Gₚ) | 21 ~ 22.1 dB |
| Power Added Efficiency (PAE) | 19% ~ 20.7% |
| Operating Drain Voltage (Vᴰˢ) | 48 V (Nominal) |
| Quiescent Drain Current (Idq) | 550 mA (Typical) |
| Drain Leakage Current | Approx. 10 µA |
| Operating Temperature | -20°C to +80°C |
| Storage Temperature | -55°C to +150°C |
| Operation Mode | Continuous Wave (CW) / Pulsed |
| Packaging Format | Tape & Reel |
Typical Applications
- GSM / EDGE cellular base station RF power amplifier
- WCDMA / LTE TDD & FDD small cell & micro-cell transmitters
- WiMAX 700~960MHz RF transmission equipment
- Private mobile radio and professional digital radio power stages
- Sub-1GHz wireless communication infrastructure transmitters
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours. S-parameters and thermal characteristic data can be provided upon formal request.
Frequently Asked Questions
Q1: What output power and operating voltage for HTN7G09S060P?
A: Typical P1dB output power is 60W (47.8dBm), nominal drain operating voltage is 48V DC.
Q2: What frequency range does HTN7G09S060P support?
A: Designed for 700MHz ~ 960MHz. It cannot operate normally below 700MHz and has no built-in RF matching circuit.
Q3: Can HTN7G09S060P directly replace HTM7G06S035P?
A: Direct replacement is not available. HTN7G09S060P (48V,60W,700-960MHz); HTM7G06S035P (12.5V,35W,1.8-600MHz). Circuit matching needs full redesign.
Q4: Are there compatible alternative models?
A: MRFE6S9045NR1 is a cross-brand alternative. Package and impedance differ; RF matching network must be re-tuned, plug-and-play swap is impossible.
Q5: How to design thermal solution for TO-270-2 package?
A: Attach the metal flange tightly to heatsink with thermal grease. Ensure proper pressure to lower thermal resistance and prevent overheating under CW operation.
Q6: Does this transistor support CW and pulsed operation?
A: Yes. HTN7G09S060P supports both continuous wave and pulsed modes, widely used in cellular base station transmitter circuits.
Q7: What is the difference between peak pulse power and P1dB rating?
A: The official 60W rating refers to CW P1dB power. The 97W peak pulse value from public resources cannot be adopted for continuous design. Refer to official datasheet for engineering work.
Q8: Is internal RF matching integrated inside the device?
A: No internal matching. Users need to design independent input and output RF matching networks based on target operating frequency.
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