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K4A8G165WB-BCRC

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K4A8G165WB-BCRC

Part NumberK4A8G165WB-BCRC
ManufacturerSamsung Electronics
CategoryIntegrated Circuits (ICs) > Memory > DDR4 SDRAM
Description8Gb (512M x 16) High-Speed DDR4 SDRAM, 2400 Mbps, 1333 MHz, 1.14V~1.26V, 96-FBGA(7.5×13.3mm), RoHS Halogen-Free, Commercial & Industrial Temperature Range.
Stock StatusIn Stock
OriginOriginal Factory

Product Overview

The K4A8G165WB-BCRC is Samsung’s high-density 8Gb DDR4 SDRAM. Built with a 512M x 16 memory layout, it meets high-bandwidth demands for industrial automation, network equipment, embedded modules, desktop and server systems. It runs at 2400 Mbps with 1333 MHz clock frequency, adopts 1.2V low-power core supply, and integrates POD, DBI and multi bank groups to boost transmission efficiency. Housed in compact 96-ball FBGA packaging, it balances fast speed, large capacity and stable operation for heavy embedded computing scenarios.

Core Advantages

High-Bandwidth Performance

Supports up to 2400 Mbps per pin, speeding up data transmission and removing system processing bottlenecks.

Wide x16 Organization

16-bit wide bus design helps designers reach larger memory capacity with fewer chips, simplifying PCB layout.

Exceptional Energy Efficiency

1.2V operating voltage cuts overall power consumption by up to 30% vs old 1.5V DDR3 solutions, lowering device heat generation.

Advanced Hardware Data Integrity

Built-in CRC error detection, on-chip parity and programmable ODT ensure stable, error-free signal transmission.

Key Specifications

BrandSamsung DDR4 SDRAM Series
RoHS StatusRoHS Compliant / Lead-Free / Halogen-Free
EDA/CAD ModelSchematic symbols, 3D component files, and 96-ball FBGA landing templates are available upon request
Warranty1-Year Standard Quality Warranty
Package / Case96-FBGA (7.5mm × 13.3mm)
Mounting TypeSurface Mount (SMT / SMD)
Surface Marking / SilkscreenK4A8G165WB BCRC Marking
Memory ArchitectureDDR4 SDRAM (Double Data Rate 4)
Density & Bit Width8 Gb (8 Gigabit component, organized as 512M x 16)
Data Rate Support2400 Mbps (DDR4-2400 standard)
Clock Frequency1333 MHz
Standard Latency TimingsCL17-17-17 (Component Column Address Strobe Latency)
Internal Bank Configuration4 Bank Groups consisting of 4 individual banks each (Total 16 internal banks)
Operating Voltage (VDD / VDDQ)1.2V ± 0.06V, operating range: 1.14V ~ 1.26V
Activation Voltage (VPP)2.5V ± 0.125V (DDR4 pump voltage supply rail, range: 2.375V ~ 2.625V)
Operating Temperature Range0°C to +85°C (Standard commercial grade); -40°C ~ +95°C (Industrial extended temperature)
Category ClassificationIntegrated Circuits > Memory IC > DDR SDRAM

Typical Applications

  • High-performance personal computers, thin laptops, and multi-core servers
  • Industrial automation controllers, embedded single-board computers (SBC), and edge computing devices
  • Enterprise-tier networking equipment, core routers, high-speed hardware firewalls, and network switches
  • High-definition smart TVs, television set-top boxes, and multimedia streaming base stations
  • Automotive cockpit computing, advanced telemetry clusters, and high-tier camera tracking hardware

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Shipping TimeShipped within 1-2 business days
Delivery Time3-7 working days worldwide
Shipping MethodsDHL, UPS, FedEx, EMS
Payment MethodsT/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.

Frequently Asked Questions

Q1: What does the “BCRC” suffix stand for in this Samsung memory model?

A: “BC” stands for commercial temperature 96-FBGA lead-free packaging; “RC” represents performance grade, matched with DDR4-2400 and CL17 timing parameters.

Q2: What advantages does the 512M x16 layout bring compared with x8 layout?

A: The x16 16-bit bus can build a 64-bit memory channel with only 4 chips, fewer components simplify PCB wiring and save board space versus 8pcs x8 chips.

Q3: Why does DDR4 need an independent 2.5V VPP power supply?

A: The 2.5V auxiliary VPP rail drives internal wordline activation separately from the 1.2V main core voltage, cutting power consumption during idle periods.

Q4: Is K4A8G165WB-BCRC pin-to-pin compatible with DDR3 motherboards?

A: Not compatible. DDR4 has different electrical signals, pin definition, notch position and command protocol, cannot work on DDR3 hardware.

Q5: What temperature range does this chip support?

A: Standard commercial range 0°C ~ +85°C; it also supports extended industrial temperature -40°C ~ +95°C for industrial equipment.

Q6: Can I apply for free samples of K4A8G165WB-BCRC?

A: Yes, submit your demand via Quick Inquiry form, we support small sample testing for qualified corporate buyers.

Q7: What is the physical size of this 96-FBGA package?

A: Package dimension is 7.5mm × 13.3mm, SMT surface mount process for PCB welding.

Q8: Is this memory RoHS and halogen-free compliant?

A: Fully RoHS compliant, lead-free and halogen-free, meets global environmental standards.

Q9: What is the warranty period for bulk order chips?

A: We provide 1-year quality warranty for all original Samsung memory ICs.

Q10: What equipment is this DDR4 chip commonly used in?

A: Widely used in industrial automation, network switches, embedded modules, desktop PCs and entry-level servers.

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