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MRF151G

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MRF151G

Part NumberMRF151G
ManufacturerM/A‑COM Technology Solutions / Microsemi
CategoryDiscrete Semiconductor Products > Transistors – FETs, MOSFETs – RF
DescriptionN‑Channel RF Power MOSFET Transistor, 300W Output Power, 50V, 175 MHz Frequency Range, M174 / Flanged Ceramic Package.
Stock StatusIn Stock
OriginOriginal Factory

Product Overview

The MRF151G is a high‑power N‑channel enhancement‑mode RF MOSFET for industrial, commercial and military radio transmitters up to 175 MHz. Running from 50V supply, it delivers minimum 300W RF output power with high gain, high efficiency and strong load mismatch tolerance. Packaged in M174 flanged ceramic housing, it is designed for chassis‑mount broadband push‑pull RF power amplifiers.

Core Advantages

High‑Power RF Performance

300W output power, 14‑16dB typical gain at 175 MHz, lowers driver power requirements for transmitter systems.

Superior Mismatch Ruggedness

Survives 30:1 full‑phase VSWR mismatch under rated operating conditions.

Good Linearity & Efficiency

Low intermodulation distortion, 50% typical efficiency, ideal for SSB and broadcast transmitters.

Low‑Thermal‑Resistance Package

Gold‑metallized M174 ceramic flange package, RθJC=0.35℃/W, reliable for continuous chassis‑mount operation.

Key Specifications

BrandMACOM / Microsemi
RoHS StatusRoHS Compliant (“G” Suffix Indicates Green/Lead‑Free)
EDA / CADPCB Footprint & 3D Model Available upon Request
Warranty1‑Year Standard Quality Warranty
Package / CaseM174 (Case 211‑11) Flanged Ceramic Package
Mounting TypeChassis Mount / Flange Mount
Surface Marking / SilkscreenMRF151G
Transistor TypeRF N‑Channel MOSFET
Frequency RangeHF to 175 MHz
Output Power (Pout)300 W (Minimum)
Drain‑Source Voltage (Vdss)125 V (Max)
Operating Drain Voltage (Vdd)50 V (Nominal)
Drain Current (Id)40 A (Max Continuous)
Power Gain14 dB to 16 dB (Typical at 175 MHz)
Thermal Resistance (RθJC)0.35 °C/W (Max)
Efficiency50% (Typical @175MHz)
Operating Junction Temperature-65°C to +200°C
Storage Temperature Range-65°C ~ +150°C

Typical Applications

  • High‑Power HF and VHF Commercial and Military Radio Transmitters
  • Broadcast FM Radio and TV Transmitter Power Amplifiers
  • Industrial, Scientific, and Medical (ISM) RF Generators (RF Heating, Induction Welding, CO₂ Lasers)
  • Nuclear Magnetic Resonance (NMR) and MRI Amplification Systems
  • Linear SSB Base Station Amplifiers and Marine VHF Communications Equipment

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Shipping TimeShipped within 1‑2 business days
Delivery Time3‑7 working days worldwide
Shipping MethodsDHL, UPS, FedEx, EMS
Payment MethodsT/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.

Frequently Asked Questions

Q1: What does “G” suffix mean for MRF151G?

A: G stands for lead‑free RoHS green finish. MRF151 (without G) is tin‑lead non‑RoHS version. Both share identical die, pinout and electrical parameters.

Q2: What are key specs of MRF151G?

A: 300W min output, 50V supply, up to 175 MHz, 14‑16dB gain, 40A max drain current, RθJC=0.35℃/W.

Q3: How tough is its load mismatch capability?

A: It can sustain 30:1 full‑phase VSWR without performance degradation or device damage under rated conditions.

Q4: What mounting requirement for MRF151G?

A: M174 Case211‑11 flanged ceramic package, chassis‑flange mounting required for heat dissipation, not for SMT.

Q5: Can MRF151 replace MRF151G directly?

A: Pin‑to‑pin physically compatible. Note plating difference: MRF151 is tin‑lead, MRF151G is lead‑free. Adjust soldering profile accordingly. RoHS‑required projects must choose MRF151G.

Q6: Difference between junction temperature and storage temperature?

A: Operating junction: ‑65℃ ~ +200℃ (power‑on working). Storage: ‑65℃ ~ +150℃ (unpowered storage, do not exceed 150℃).

Q7: Where to get datasheet and S‑parameter files?

A: Submit product inquiry to obtain official datasheet, S‑parameter and volume quotation.

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