Share to:

MRF427

Add to quote

MRF427

Part NumberMRF427
ManufacturerMotorola / NXP / ASI
CategoryDiscrete Semiconductor Products > Transistors > Bipolar RF Transistors
DescriptionNPN Silicon RF Power Transistor, 30W PEP Output, DC‑30 MHz HF Band, 28V Operation, Excellent IMD Linear Performance.
Stock StatusIn Stock
OriginOriginal / Authorized Substitute

Product Overview

MRF427 is NPN silicon RF power BJT for DC‑30 MHz HF linear amplifiers. Originally from Motorola‑NXP, ASI also provides cross‑brand compatible units. Operating at 28 V DC, it delivers 30 W PEP with low IMD3 distortion. Built‑in emitter ballast resistors improve VSWR ruggedness. Hermetic FM‑4 flange‑mount package for military, marine and ham radio transmitters. Note: NXP original and ASI versions have different maximum junction temperature ratings.

Core Advantages

Superior Linear & Low IMD Performance

Tuned for Class A/AB/B SSB amplifiers, IMD3 ≤‑34 dBc for clean HF signal output.

High VSWR Ruggedness

Internal emitter ballast resistors prevent thermal runaway under severe antenna mismatch.

Hermetic Metal‑Ceramic Package

Gold‑metallized FM‑4 flange package, stable and reliable for harsh radio environments.

28V Standard Rail Compatibility

Matches common 28 V power supply for fixed and vehicle‑mount HF transmitting equipment.

Key Specifications

BrandMotorola / NXP / ASI
RoHS StatusRoHS Compliant options available / Leaded Industrial Standard
EDA/CADSymbol, Footprint & 3D Model Available
Warranty1‑Year Standard Quality Warranty
Package / CaseFM‑4 / O‑CRFM‑F4, 0.500‑Inch Flange‑Mount, Hermetic 4‑Pin Metal‑Ceramic Package
Mounting TypeChassis Mount / Through‑Hole Flange Mount
Surface Marking / SilkscreenMRF427 Marking
Transistor PolarityNPN Silicon RF Bipolar Transistor (BJT)
Frequency RangeDC to 30 MHz (HF Band)
Output Power30 W PEP (Peak Envelope Power)
Supply Voltage28 V DC Nominal
Collector‑Emitter Voltage (Vceo)65 V DC Max
Collector‑Base Voltage (Vcbo)110 V DC Max
Maximum Collector Current6 A DC Max
Maximum Power Dissipation80 W @ 25°C Case Temperature
Power GainTyp. ≥18 dB (25 W Output, 30 MHz, 28 V)
DC Current Gain (hFE)Minimum 15 (under specified test condition)
Thermal Resistance θJCApprox. 2.19 °C/W (Junction‑to‑Case)
Third‑Order IMD PerformanceIMD3 ≤ ‑34 dBc @ 25 W Output
Operating Junction Temperature-65°C ~ +150°C (NXP‑Motorola original);‑65°C ~ +200°C (ASI version)
Packaging FormatTray / Anti‑Static Protective Box Packaging

Typical Applications

  • High‑frequency (HF) Single Sideband (SSB) linear power amplifier stages
  • Military and tactical HF communication transceivers (DC‑30 MHz)
  • Marine HF radio communication systems and coastal station transmitters
  • Amateur radio (Ham Radio) high‑power linear amplifiers
  • Commercial fixed‑station and mobile HF radio power drivers

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Shipping TimeShipped within 1‑2 business days
Delivery Time3‑7 working days worldwide
Shipping MethodsDHL, UPS, FedEx, EMS
Payment MethodsT/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.

Frequently Asked Questions

Q1: What is the primary operating frequency band for the MRF427?

A: It covers DC‑30 MHz full HF band, optimized for SSB linear transmitters under 28 V supply.

Q2: What is the difference between NXP‑Motorola original and ASI cross‑brand MRF427?

A: Main electrical parameters match. NXP original max junction temperature is +150°C; ASI upgraded version reaches +200°C. Always follow the corresponding manufacturer datasheet for thermal design.

Q3: Can MRF427 directly replace MRF428?

A: They share identical FM‑4 package and pinout. MRF428 delivers higher output power. Physically pin‑compatible, but bias circuit and heatsink must be readjusted, not true plug‑and‑play swap.

Q4: Are there cross‑brand or drop‑in competitor alternatives for MRF427?

A: ASI MRF427 is the main cross‑brand substitute. No full drop‑in equivalent from other vendors. Similar‑power HF transistors still require input‑output impedance re‑matching even with same package.

Q5: Why is Vcbo (110V) much higher than Vceo (65V)?

A: Vcbo is collector‑base voltage with emitter open. Vceo is real‑world working collector‑emitter rating. Do not exceed 65 V on collector‑emitter in practical circuits to avoid device damage.

Q6: Does the same flange‑mount package guarantee pin‑to‑pin compatibility?

A: No. Same flange dimension does not mean identical pin assignment. Always double‑check pin‑out before soldering to prevent transistor burnout.

Q7: What thermal requirements apply to MRF427?

A: Junction‑to‑case thermal resistance θJC ≈2.19°C/W. Firm thermal contact to heatsink is mandatory. Derate output power if operating near maximum junction temperature.

Q8: Can MRF427 be used for AM broadcast transmitter?

A: Yes, it supports AM mode. Note that AM applications have higher thermal stress, sufficient heatsink and power derating are strongly recommended.

Q9: How can I get datasheet, reference circuit or bulk quotation?

A: Please submit your demand via quick inquiry form. Our team will send datasheet, stock confirmation and pricing within 24 hours.

[next_prev_pages]
Related Products
Scroll to Top