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PMPB27EP,115
PMPB27EP,115
| Part Number | PMPB27EP,115 |
|---|---|
| Manufacturer | NXP Semiconductors |
| Category | MOSFETs; P-Channel Enhancement Mode Field Effect Transistor |
| Description | P-Channel MOSFET, -20V, -4.8A, Low RDS(ON), SOT-23-3 Package |
Product Overview
The PMPB27EP,115 is a small-signal P-channel enhancement mode MOSFET designed for high-efficiency switching applications in compact electronic designs. It features a -20V drain-source voltage rating, -4.8A continuous drain current, and ultra-low on-resistance to minimize power loss and heat generation. This MOSFET offers fast switching speed, low gate charge, and excellent thermal performance, making it ideal for battery-powered devices, load switching, and power management circuits. Housed in a space-saving SOT-23-3 surface-mount package, it supports high-density PCB designs while maintaining reliable performance across industrial temperature ranges.
| Key Specifications | |
|---|---|
| RoHS Status | RoHS Compliant |
| EDA / CAD Models | 3D Model, Symbol, Footprint Available |
| Warranty | 2-Year Warranty |
| Brand | NXP |
| Channel Type | P-Channel Enhancement Mode |
| VDS | -20 V |
| ID | -4.8 A |
| Package Type | SOT-23-3 |
| Operating Temperature | -55°C to +150°C |
Typical Applications
- Load Switching & Power Management
- Battery-Operated Portable Devices
- DC-DC Converters & Power Supplies
- Consumer Electronics
- IoT Sensor Nodes
- Mobile Phone Peripherals
- Small Signal Switching Circuits
- High-Density PCB Designs
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
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